• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.10
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.389-392
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• 2001

In this paper, we have explained electrical characteristics of a step-down Rosen type piezoelectric transformer for AC-adapter. When the electric voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, then output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformer were measured under the various conditions of loads and frequencies. We measured resonant frequency from impedance curve. It was shown from experiments that output voltage has increased and resonant frequency has changed according to various resistor loads. Output current has changed inversely proportional to resistances.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.79-86
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• 2013

In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.

• 연구논문집
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• s.27
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• pp.175-181
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• 1997

Superconducting joints between Bi-2223/Ag tapes are fabricated by a press & reaction anneal and a multiple press & anneal. The silver sheath was mechanically or chemically removed from one side of each tape without altering the superconducting core. The exposed superconducting core of the two tapes were brought into contact and pressed so as to form a lap joint. The joined tapes were then subjected to a series of different thermomechanical treatments to achieve optimum heat treatment condition. The result from transport measurements shows that critical current ($I_c$) transmitting through joined area reaches 9A, approximately 60% of the current capacity of the tapes themselves. The critical current through joined area was improved by repeated press and reaction annealing. Measurements of the current-voltage relationship were made with several configuration of the voltage probes to characterize the critical current variation and I-V curve along the joint. Also discussed are microstructural aspects of the superconducting joint.

• Journal of the Korean institute of surface engineering
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• v.55 no.5
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• pp.292-298
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• 2022

In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na₂SiO₃ + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm² of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.4
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• pp.320-326
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• 2014

In this paper, the new smart dimming algorithm which is mixed with PWM and PAM control method is proposed for reducing the power consumption of LED TV Backlight. The proposed technique is using the curve characteristics of LED forward voltage and current which is proportionally changing LED forward voltage as changing LED forward current. Therefore, each PWM and PAM control method has different LED forward voltage and current in the same brightness condition. The PWM control method adjusts the brightness of LED TV Backlight by only varying the duty ratio of PWM and constantly sustaining the amplitude of LED forward current and voltage. So, the level of LED forward current and voltage in the PWM control method is relatively high and constant regardless of duty ratio of PWM. On the other hand, the PAM control method adjusts the brightness of LED TV Backlight by directly varying the level of LED forward current. So, the level of LED forward current and voltage in the PAM control method is lowered according to the brightness level. For the above-mentioned reason, the PAM control method has the advantage of reducing the total power consumption of LED TV Backlight at the brightness condition of below 100%, compared with PWM control method. By implementing this characteristic to LED driver circuit with control algorithm in MCU, the power consumption of LED TV Backlight can expect to be reduced. The effectiveness of the proposed method, new smart dimming algorithm, CPWAM(=Conditional Pulse Width Amplitude Modulation), has been verified by experimental results.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.47-51
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• 2001

In this paper, we have explained electrical characteristics of a step-down Rosen type piezoelectric transformer for AC-adapter. When the electric voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, then output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer have derived with an equivalent circuit model. With the symbolic expressions, load and frequency characteristics have discussed through simulation. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the various conditions of loads and frequencies. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage has increased and resonant frequency has changed according to various resistor loads. Output current has decreased inversely proportional to changing of loads. Moreover, the measured values of output voltage and current are well agreed with the simulated values of the proposed equivalent circuit model.

• Journal of Power Electronics
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• v.3 no.2
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• pp.139-144
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• 2003

In this paper, 11 and 13 layered step-down piezoelectric transformers were fabricated and their electrical characteristics have been analyzed for AC-adapter. When the voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, the output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer are derived with an equivalent circuit model. With those expressions, load and frequency characteristics are discussed through the simulations. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the different load and frequency conditions. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage increase s and resonant frequency changes according to the various resistor loads. Output current decreases inversely proportional to the change of loads. Moreover, the measured output voltage and current are well matched with the simulated results obtained from the proposed equivalent circuit model. Furthermore, a new step-down piezoelectric transformer has been suggested to Increase the output power based on a simulation result having a driving piezoelectric vibrator polarized thickness direction.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.46-51
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• 1989

The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.