• Polymer(Korea)
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• v.27 no.1
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• pp.40-45
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• 2003

In this work, the effect of different contents of $Fe_3O_4$ and temperature variation on the electrical conductivity ($\sigma$) in the polar acrylonitrile butadiene rubber (NBR)/$Fe_3O_4$ (magnetite) mixture system was investigated. It was found that the percolation threshold concept holds true for the conductive particle-filled composites where $\sigma$ indicates a nearly sharp increase when the concentration of magnetite in the mixture exceeds 22%. The temperature dependence of $\sigma$ was thermally activated below and at the percolation threshold ($P_c$). Magnetite acted as reinforcing and conductive filler for NBR. At room temperature and higher voltages, the electrical current was proportional to the square of voltage ($I{\propto}V^2$) for the composites which contain 30 phr of magnetite. Moreover, it was shown that the composites with magnetite of 50 phr showed the highest tensile strength and elongation at break, which was due to the formation of optimal physical interlock and crosslinking. The results of 100%, 200%, and 300% Young moduli said that the moduli are largely correlated with reinforcement effect of magnetite and viscosity of the blends from torque curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.835-843
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• 2008

We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.26-30
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• 2011

In order to improve the energy conversion efficiency of dye-sensitized solar cell (DSSC), the photoelectrode was manufactured by using $TiO_2$ and $WO_3$ on combination effects of two conduction bands. The smash procedure of $TiO_2$ and $WO_3$ was carried out by using a paint shaker to enlarge the contact area of semiconductor with dye and electrolyte. The energy conversion efficiency of prepared DSSC was improved about two times from current-voltage curve based on effects of $WO_3$ and smash. The mechanism was suggested that the conduction band of $WO_3$ worked for prohibiting the trapping effects of electrons in conduction band of $TiO_2$. This result is attributed to the prevention of electron recombination between electron in conduction band of $TiO_2$ with dye and electrolyte. Impedance results indicate the improved electron transport at interface of $TiO_2$/dye/electrolyte.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.461-466
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• 2011

In this study, the fluorine doped $TiO_2$ was prepared as a photoelectrode in order to improve the efficiency of dye-sensitized solar cells and estimated the electrochemical characterizations. The energy conversion efficiency of the prepared dye-sensitized solar cells using fluorine doped $TiO_2$ was calculated from a current-voltage curve. The efficiency of prepared dye-sensitized solar cells was improved by about maximum three times by F-doping on $TiO_2$. It was suggested that the efficiency of dye-sensitized solar cells was improved by hybrid semiconductors of $TiO_2/TiOF_2$ in photoelectrode based on reduced $TiOF_2$ energy level via fluorine doping. It can be confirmed that the electron transport was faster but the electron recombination was slower by doping fluorine on $TiO_2$ in photoelectrode through intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy analysis.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.118-123
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• 2008

In the present study, the effect of oxyfluorination treatment on multi-walled nanotubes (MWNTs) supports was investigated by analyzing surface functional groups. The surface characteristics were determined by Fourier transformed-infrared (FT-IR) and X-ray photoelectron spectroscopy (XPS). After the deposition of platinum nanoparticles on the above treated carbon supports, a crystalline size and a loading level had been investigated. Electrochemical properties of the treated MWNTs-supported Pt (Pt/MWNTs) catalysts were analyzed by current-voltage curve measurements. From the results of surface analysis, an oxygen and fluorine-containing functional group had been introduced to the surface of carbon supports. The oxygen and fluorine contents were the highest value at the treatment of 100 temperature. The Pt/100-MWNTs showed the smallest particle crystalline size of 3.5 nm and the highest loading level of 9.4% at the treatment of 100 temperature. However, the sample treated at the higher temperature showed the larger crystalline size and the lower loading level. This indicated that the crystalline size and the loading level could be controlled by changing the temperature of oxyfluorination treatment. Accordingly, an electrochemical activity was enhanced by increasing the temperature of treatment upto 100, and then decreased in the case of 200 and 300. The highest specific current density of 120 mA/mg had been obtained in the case of Pt/100-MWNTs.

• Journal of Biomedical Engineering Research
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• v.28 no.2
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• pp.306-309
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• 2007

PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.8-15
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• 2018

New methodology for probabilistic reliability based grid expansion planning of HVDC in power system including Wind Turbine Generators(WTG) is developed in this paper. This problem is focused on scenario based optimal selection technique to decide best connection bus of new transmission lines of HVDC in view point of adequacy reliability in power system including WTG. This requires two kinds of modeling and simulation for reliability evaluation. One is how is reliability evaluation model and simulation of WTG. Another is to develop a failure model of HVDC. First, reliability evaluation of power system including WTG needs multi-state simulation methodology because of intermittent characteristics of wind speed and nonlinear generation curve of WTG. Reliability methodology of power system including WTG has already been developed with considering multi-state simulation over the years in the world. The multi-state model already developed by authors is used for WTG reliability simulation in this study. Second, the power system including HVDC includes AC/DC converter and DC/AC inverter substation. The substation is composed of a lot of thyristor devices, in which devices have possibility of failure occurrence in potential. Failure model of AC/DC converter and DC/AC inverter substation in order to simulate HVDC reliability is newly proposed in this paper. Furthermore, this problem should be formulated in hierarchical level II(HLII) reliability evaluation because of best bus choice problem for connecting new HVDC and transmission lines consideration. HLII reliability simulation technique is not simple but difficult and complex. CmRel program, which is adequacy reliability evaluation program developed by authors, is extended and developed for this study. Using proposed method, new HVDC connected bus point is able to be decided at best reliability level successfully. Methodology proposed in this paper is applied to small sized model power system.