• Title/Summary/Keyword: current-voltage curve

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Fault Diagnosis Algorithm of Electronic Valve using CNN-based Normalized Lissajous Curve (CNN기반 정규화 리사주 도형을 이용한 전자식 밸브 고장진단알고리즘)

  • Park, Seong-Mi;Ko, Jae-Ha;Song, Sung-Geun;Park, Sung-Jun;Son, Nam Rye
    • Journal of the Korean Society of Industry Convergence
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    • v.23 no.5
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    • pp.825-833
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    • 2020
  • Currently, the K-Water uses various valves that can be remotely controlled for optimal water management. Valve system fault can be classified into rotor defects, stator defects, bearing defects, and gear defects of induction motors. If the valve cannot be operated due to a gear fault, the water management operation can be greatly affected. For effective water management, there is an urgent need for preemptive repairs to determine whether gear is damaged through failure prediction diagnosis.. Recently, deep learning algorithms are being applied for valve failure diagnosis. However, the method currently applied has a disadvantage of attaching a vibration sensor to the valve. In this paper, propose a new algorithm to determine whether a fault exists using a convolutional neural network (CNN) based on the voltage and current information of the valve without additional sensor mounting. In particular, a normalized Lisasjous diagram was used to maximize the fault classification performance in the CNN-based diagnostic system.

Fundamental Small-signal Modeling of Li-ion Batteries and a Parameter Evaluation Using Levy's Method

  • Zhang, Xiaoqiang;Zhang, Mao;Zhang, Weiping
    • Journal of Power Electronics
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    • v.17 no.2
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    • pp.501-513
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    • 2017
  • The fundamental small-signal modeling of lithium-ion (Li-ion) batteries and a parameter evaluation approach are investigated in this study to describe the dynamic behaviors of small signals accurately. The main contributions of the study are as follows. 1) The operational principle of the small signals of Li-ion batteries is revealed to prove that the sinusoidal voltage response of a Li-ion battery is a result of a sinusoidal current stimulation of an AC small signals. 2) Three small-signal measurement conditions, namely stability, causality, and linearity, are proved mathematically proven to ensure the validity of the frequency response of the experimental data. 3) Based on the internal structure and electrochemical operational mechanism of the battery, an AC small-signal model is established to depict its dynamic behaviors. 4) A classical least-squares curve fitting for experimental data, referred as Levy's method, are introduced and developed to identify small-signal model parameters. Experimental and simulation results show that the measured frequency response data fit well within reading accuracy of the simulated results; moreover, the small-signal parameters identified by Levy's method are remarkably close to the measured parameters. Although the fundamental and parameter evaluation approaches are discussed for Li-ion batteries, they are expected to be applicable for other batteries.

The Study on the Cell Electrochemical Properties with Increasing Water content in Dye-Sensitized Solar cells (염료 감응형 태양전지에서 수분의 함량에 따른 셀의 전기 화학적 특성 연구)

  • Seo, Hyun Woo;Kim, Dong Min
    • Transactions of the Korean hydrogen and new energy society
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    • v.25 no.3
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    • pp.289-296
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    • 2014
  • Here, we have studied the effect of water added electrolyte on the photovoltaic performance of dye-sensitized solar cells (DSSCs). It was found that open-circuit voltage ($V_{oc}$) increased and short-circuit current density ($j_{sc}$) decreased with the increase of the amount of added water in the electrolyte of the DSSCs. Electrochemical impedance spectroscopy (EIS) study showed that the electrolyte with added water shifted the dye loaded $TiO_2$ conduction band upward that eventually increased $V_{oc}$ of the cells. On the other hand, the upward shift of $TiO_2$ conduction band decreased the driving force for the electron injection from the lowest unoccupied molecular orbital (LUMO) of the dye molecules to the conduction band of $TiO_2$ that resulted in decreased $j_{sc}$.

The Current-Voltage Characteristics analysis of EPI MOSFET using TCAD (TCAD를 이용한 EPI MOSfET의 전류-전압 특성 분석)

  • 김재홍;장광균;심성택;정학기;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.10a
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    • pp.490-493
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    • 2000
  • The technology for characteristics analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high integrated device by computer simulation and to fabricate the device having such characteristics became one of very important subjects. As devices become smaller to submicron, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane by TCAD(Technology Computer Aided Design) to develop optimum device structure. We compared and analyzed the characteristics of such device structure, i.e., impact ionization, electric field and I-V characteristics curve with lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation.

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Programming Characteristics of the multi-bit devices based on SONOS structure (SONOS 구조를 갖는 멀티 비트 소자의 프로그래밍 특성)

  • An, Ho-Myoung;Kim, Joo-Yeon;Seo, Kwang-Yell
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.80-83
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    • 2003
  • In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

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Nonvolatile Flexible Bistable Organic Memory (BOM) Device with Au nanoparticles (NPs) embedded in a Conducting poly N-vinylcarbazole (PVK) Colloids Hybrid

  • Son, Dong-Ick;Kwon, Byoung-Wook;Park, Dong-Hee;Yang, Jeong-Do;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.440-440
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    • 2011
  • We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

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Graphene Doping Effect of Thin Film and Contact Mechanisms (박막의 그래핀 도핑 효과와 접합 특성)

  • Oh, Teressa
    • Korean Journal of Materials Research
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    • v.24 no.3
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    • pp.140-144
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    • 2014
  • The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

Fabrication of Soda Borosilicate Class-Coated Electrostatic Chucks (소다붕규산염유리 도포형 정전척의 제조)

  • 방재철
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.1
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    • pp.49-52
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    • 2002
  • This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. Glass coating on the stainless steel substrate was 125 $\mu\textrm{m}$ thick. The adhesion of glass coating was found to be excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and high applied voltages. The deviations at elevated temperatures and high applied voltages are due to increased leakage current as the electrical resistivity of glass coating drops.

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PV-Module's Voltage-Current special quality research by Electron-beam irradiation. (전자빔 조사에 의한 PV-Module의 전압-전류 특성)

  • Yoon Jeong-Phil;Lee Gi-Jae;Gang Byong-Bok;Cha In-Su;Gang Gi-Hwan;Jung Myung-Woong;Yu Gwon-Jong
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.109-113
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    • 2001
  • Exhaustion and environmental problem are big problem of 21th century is flint energy and the importance of energy to alternate flint energy as being risen is embossed more. Photovoltaic system is occupying big flow along with wind force development among is many substitute energy has shortcoming that energy conversion efficiency falls behind than another thing substitute energy, This research investigates electron beam to specification energy to Module that was generalized and schematized difference of curved line after existing V-I efficiency characteristic curve and irradiation. And will analyze cause of Module's efficiency addition and subtraction by electron beam investigation.

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A study on the photoelectric characteristics as a result of changing grid gap (DSC(Dye-sensitized Solar Cell)의 Grid 간격 변화에 따른 광전특성 연구)

  • Seo, Hyun-Woong;Kim, Mi-Jeong;Choi, Jin-Young;Hong, Ji-Tae;Park, Sung-Jin;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.199-201
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    • 2006
  • A lot of researches and experiments have been performed to make more efficient dye-sensitized solar cell. Among them, insertion of a grid electrode in DSC is one method to increase overall performance as being shortened distance of electrons' movement by diffusion. In this paper, we measured overall characteristics which is included voltage-current characteristic curve, efficiency, fill factor by comparison between DSC without and with grid electrode. As a result, we got maximum 1.8 times increase of efficiency and approximately 1.7 times rise of fill factor. And we experimented 8, 10, 12, 14mm of grid gap and compared their results to optimize grid gap which is able to incite the most effective movement of electrons. Consequently, we got the result that electrons' movement is the most effect ive when grid gap is approximately 12mm.

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