• Title/Summary/Keyword: current-effect

Search Result 10,201, Processing Time 0.215 seconds

PMSG Wind Turbine Simulation under the consideration of real characteristics (PMSG 풍력 터빈의 특성을 고려한 발전 시스템 시뮬레이션)

  • Sim, Junbo;Kim, Myungho;Park, Kihyeon;Han, Kyungseop
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.11a
    • /
    • pp.182.2-182.2
    • /
    • 2010
  • A various algorism has been studied to extract possibly every energy from a wind turbine in conjunction with the increase of concern about wind power system. In order to verify these control algorism, it is essential to make the most similar conditions to the real wind turbine's environment. Therefore, using separately excited DC motor a wind turbine the most similar to the real turbine is simulated. Tower shadow effect and Wind shear effect are considered as well as inertia emulation. For the control of Back-to-Back Converter Vector current control methods and space vector pulse width modulation are used and for reducing THD of grid current LCL filter is considered. This simulation results verified the energy produced by wind all flows into the utility under the consideration of the characteristics of a wind turbine. The result of this paper is expected to be used as a basic material for analyzing the characteristics of the wind turbine generator.

  • PDF

폴리톨루이딘 합성 및 전기화학적 특성분석

  • Park, Su Beom;Lee, Seong Ju;Kim, Eun Ok
    • Journal of the Korean Chemical Society
    • /
    • v.46 no.3
    • /
    • pp.225-228
    • /
    • 2002
  • Poly-o-toluidine (POT) was chemically and electrochemically synthesized for the study of the electronic and steric effect of methyl substituents. It was found that the steric effect was dominant in POT. The IP 4.95 eV, EA 3.24 eV, Eg 1.71 eV of POT were found by the CV (Cyclic Voltammetry) and CCPSA (Constant Current Potentiometric Stripping Analysis).

Implementation of the Four-Terminal GaAs MESFET Model on SPICE (4단자 GaAs MESFET Model의 SPICE 탑재)

  • 조남홍;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.31A no.1
    • /
    • pp.39-47
    • /
    • 1994
  • The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

  • PDF

Electrical Properties of CuPc Field-effect Transistor with Different Electrodes (전극에 따른 CuPc Field-effect Transistor의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.10
    • /
    • pp.930-933
    • /
    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

Electrical Properties of CuPc Field-effect Transistor (CuPc Field-effect Transistor의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2008.10a
    • /
    • pp.619-621
    • /
    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

  • PDF

Analysis and Control of a 3-Phase VR Type Self-Bearing Step Motor for Small Angle Control Considered the fringing Effect (프린징효과를 고려한 미세각도 제어용 3상 가변형 셀프베어링 스텝모터의 해석 및 제어)

  • Kim, Daegon
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.18 no.10
    • /
    • pp.93-100
    • /
    • 2001
  • The analysis and control of a new type unsymmetrical slotted self-bearing step motor for small angle control is presented. The motor actuator is used for both motor and bearing functionality without any additional coil windings or electromagnets for bearing functionality. A circular-arc, straight-line permeance model for the fringing effect is presented. An unsymmetrical slotted self-bearing step motor layout and control algorithm are described. A new control current generation method using the electromagnets layout geometry, which needs no additional current for bearing functionality, is proposed. As the result of this analysis the fringing effect largely influences on the system characteristics. especially in torque. Even if the bearing functionality is added into the motor functionality, it is shown that the magnitude of torque is not changed.

  • PDF

Effects of Temperature Amplitude and Loading Frequency on Alternating Current - Induced Damage in Cu Thin Films

  • Park Yeung-Bae
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.12 no.2 s.35
    • /
    • pp.135-140
    • /
    • 2005
  • Although it was recently observed that severe fatigue damage was formed in Al or Cu interconnects due to the cyclic temperatures generated by Joule heating of the metal lines by the passage of alternating currents (AC), AC loading frequency effect on the damage evolution characteristics are not known so far. This work focused on the effect of AC loading frequency (100 Hz vs. 10 kHz) on the thermo-mechanical fatigue characteristics by using polycrystalline sputtered Cu lines with temperature cycles with amplitudes from 100 to $300^{\circ}C$. It was consistently observed that higher loading frequency accelerated damaged grain growth and led to earlier failure irrespective of Cu grain sizes. The frequency effect is believed to result from differences in the concentration of defects created by the deformation-induced motion of dislocations to the grain boundaries.

  • PDF

Electrical Properties of CuPc Field-effect Transistor with Different Electrodes (전극 변화에 따른 CuPc Field-effect Transistor의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.506-507
    • /
    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

  • PDF

Electrical Properties of CuPc Field-effect Transistor with Different Electrodes (전극에 따른 CuPc Field-effect Transistor의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.04b
    • /
    • pp.12-13
    • /
    • 2008
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

  • PDF

Investigation on the Doping Effects on L-shaped Tunneling Field Effect transistors(L-shaped TFETs) (도핑효과에 의한 L-shaped 터널링 전계효과 트랜지스터의 영향에 대한 연구)

  • Shim, Un-Seong;Ahn, Tae-Jun;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2016.05a
    • /
    • pp.450-452
    • /
    • 2016
  • The effect of channel doping on L-shaped Tunneling Field-Effect Transistors (TFETs) have been investigated by 2D TCAD simulation. When the source doping is over $10^{20}cm^{-3}$, the subthreshold swing (SS) is abruptly decreased, and when drain doping concentration is below $10^{18}cm^{-3}$, the leakage current in the negative voltage is reduced.

  • PDF