• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.7
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• pp.68-74
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• 2007

For carnation productivity improvement, compact-low cost discharge lamp type ozonizer using pulse power source is designed and manufactured. This paper describes the discharge characteristics and the ozone generation characteristics with variation of the output voltage of pulse power source, the quantity of flowing air and the operating number of ozonizer. The important conclusions are as follows. The discharge voltage and current values are proportional to the output voltage of pulse power source. The ozone concentration and generation are proportional to the output voltage of pulse power source and the number of ozonizer. The maximum value of the ozone concentration and generation of the discharge lamp type ozonizer can be obtained 890[ppm] and 59.7[mg/h] respectively. In the carnation productivity house, when the discharge lamp type ozonizer is used the carnation is good quality in the uniformity of the carnation stalk thickness and increased the productivity through improvement of the air and the soil.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.70-75
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• 2014

This paper presents a IR-UWB(Impulse Radio Ultra-Wide Band) transceiver circuit for data communication and real time location system. The UWB receiver is designed to OOK(On-Off Keying) modulation for energy detection. The UWB pulse generator is designed by digital logic. And the Gaussian filter is adopted to reject side lobe in transmitter. The measured sensitivity of the receiver is -65 dBm at 4 GHz with 1 Mbps PRF(Pulse Repetition Frequency). And the measured energy efficiency per pulse is 20.6 pJ/bit. The current consumption of the receiver and transmitter including DA is 27.5 mA and 25.5 mA, respectively, at 1.8 V supply.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.7
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• pp.28-36
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• 2008

This paper presents a novel prototype of zero current switching pulse frequency modulation (ZCS-PFM )high frequency series resonant inverter using IGBT power module for electromagnetic induction eddy current heated roller in copy and printing machines. The operating principle and unique features of this voltage-fed half bridge inverter with two additional soft commutation inductor snubber are presented including the transformer modeling of induction heated rolling drum. This soft switching inverter can achieve stable zero current soft commutation under a discontinuous and continuous resonant load current for a widely specified power regulation processing. The experimental results and computer-aided analysis of this inverter are discussed from a practical point of view.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.544-547
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• 1989

The introduction of resonant link inverters has allowed the use of much higher switching frequencies in induction motor current regulators. The resonant link inverter,however, requries the use of discrete time switching strategies. This type of controller,while giving the best possible performance, is difficult to implement, since motor parameters must be calculated or measured. The delta modulated current regurator (DMCR) has been introduced as a controller without additional state feedback. A discrete pulse modulated current regulator which controls load current is introduced in the paper.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.125-136
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• 1991

a mathematical model is presented to describe the current distribution on a rotaing disk electrode under the galvanostatic pulse conlitions. A numerical technique by finite difference method to the transient convective diffusion equation, coordinate transformation and separation of variables to Laplace equation, and an iterative algorithm to solve the above equations simtltaneously with approximate boundary conditions were developed. An experimental investigated based on copper deposition in a copper sulfate-sulfuric acid system was performed and satisfactory agreement was obtained between expermental and theoretical current distribution. The current distribution of copper deposition is secondary current distribution within the experimental conditions. Dimensionless variables, N and J as well as Wagner number were used to determine the criteria for the uniformity of current distribution.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.1
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• pp.56-61
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• 2019

In this study, a reduction method of leakage current in a three-level photovoltaic power-conditioning system (PCS) is proposed and verified by simulation and experiment. Leakage current generation is analyzed through an equivalent model of the common mode voltage considering a significant parasitic capacitance existing between the photovoltaic array and ground. A leakage current reduction method using pulse-width modulation (PWM) method is also proposed, and a 10-kW three-level photovoltaic PCS simulation and experiment is performed with a $1{\mu}F$ parasitic capacitor based on 100 nF/kW. The proposed method using the PWM method is verified to reduce the leakage current by 73% compared with the conventional PWM method.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.5
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• pp.399-406
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• 2014

This study investigates the structure and operation of the ITER VS converter and proposes a sequence control method for six series-connected VS converters to reduce reactive power. The operation and the proposed sequence control method are verified through RTDS simulation. The ITER VS converter must supply voltage/current to the superconducting magnets for plasma current vertical stabilization, and the four-quadrant operation must proceed without a zero-current discontinuous section. The operation mode of the VS converter is separated into a 12- and 6-pulse circulating current and transition modes according to the size of the load current. The output voltage of the unit VS converter is limited because of the rated voltage; however, the superconducting coil must increase the operating output voltage. Thus, the VS converter must be connected in a 6-series to provide the required operating output voltage. The output voltage of the VS converters is controlled continuously; however, reactive power is limited within a minimized value of the grid. In this study, the unit converter is compared with converters connected in a 6-series to determine a suitable sequence control method. The output voltage is the same in all cases, but the maximum reactive power is reduced from 100% to 73%. This sequence control method is verified through RTDS simulation.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.71-77
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• 2010

Mg alloys have been used in automobile industry, aerospace, mobile phone and computer parts owing to low density. However, they have a restricted application because of low mechanical and poor corrosion properties. Thus, improved surface treatments are required to produce protective films. Environmental friendly Plasma Electrolytic Oxidation(PEO) was used to produce protective films on magnesium alloys. PEO process is combined electrochemical oxidation with plasma treatment in the aqueous solution. In this study, the effects of applied voltage and applied current on the surface morphologies were investigated. Also, the effects of Direct Current(DC) and Pulse Current(PC) were compared. PC and constant current control gave the dense coating on the Mg alloy. The potentiodynamic polarization tests were carried out for the analysis of corrosion properties of specimens. The surface hardness was 5 times higher than that of untreated AZ91D.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.109-113
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• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.