• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2426-2438
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• 1994

In this paper we present for the first time the electric circuit model for direct frequrncy modulation(FM) response of the conventional distributed-feedback(DFB) semiconductor laser diodes. Especially, in this paper, the proposed model includes not only the carrier density modulation effect, but also the temperature modulation effect determining the DFM characteristics of DFB characteristics of DFB semiconductor lasers. The DFM response due to injection current modulation was obtained as a function of modulation frequency from DC to a few GHz. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing the temperature modulation effect is obtained from the structure of DFB LD chip and the simulation results are compared with the published experimental results. The circuit model representing carrier density modulation effect is obtained from the rate equations of DFB lasers and the simulation results are compared with the results that were obtained by the conventional numerical analysis approach. The results showed good agreements.

• BMB Reports
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• v.46 no.7
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• pp.370-375
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• 2013

Ischemia is characterized by oxidative stress and changes in the antioxidant defense system. Our recent in vitro study showed that 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride protects cortical astrocytes against oxidative stress. In the current study, we examined the effects of 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride on ischemia-induced neuronal damage in a gerbil ischemia/reperfusion models. Extensive neuronal death in the hippocampal CA1 area was observed 4 days after ischemia/reperfusion. Intraperitoneal injection of 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride (0.3 mg/kg body weight) significantly prevented neuronal death in the CA1 region of the hippocampus in response to transient forebrain ischemia. 2-Cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride administration reduced ischemia-induced increases in reactive oxygen species levels and malondialdehyde content. It also attenuated the associated reductions in glutathione level and superoxide dismutase, catalase, and glutathione peroxidase activities. Taken together, our results suggest that 2-cyclopropylimino-3-methyl-1,3-thiazoline hydrochloride protects against ischemia-induced neuronal damage by reducing oxidative stress through its antioxidant actions.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.40-50
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• 2010

The studies of PMOS transistors in CMOS technologies are reviewed- focusing on the snapback and breakdown behavior of the parasitic PNP BJTs in high current regime. A new failure mechanism of PMOSFET devices under ESD conditions is also analyzed by investigating various I/O structures in a $0.13\;{\mu}m$ CMOS technology. Localized turn-on of the parasitic PNP transistor can be caused by localized charge injection from the adjacent diodes into the body of the PMOSFET, significantly degrading the ESD robustness of PMOSFETs. Based on 2-D device simulations the critical layout parameters affecting this problem are identified. Design guidelines for avoiding this new PMOSFET failure mode are also suggested.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1682-1691
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• 2018

Natural ester is a suitable substitute for mineral oil and has been widely used in AC transformer in many countries. In order to further application of natural ester in direct current (DC) equipment, it is needed to investigate its long term insulation property under DC condition. In this paper, a thermal ageing experiment was conducted for both mineral oil-paper and natural ester-paper insulation. The DC breakdown and space charge characteristics of insulation paper impregnated with natural ester and mineral oil was compared. Results show that the resistivity of the paper immersed in natural ester and mineral oil both increase as the ageing goes on. While insulation paper impregnated with natural ester has higher resistivity and DC breakdown voltage than the paper impregnated with mineral oil. The DC breakdown voltage for the oil impregnated insulation paper being DC pre-stressing is higher than that without pre-stressing. The average DC breakdown field strength difference between the test with pre-stressing and without pre-stressing clearly shows that there is an apparent enhancement effect for the homo-charge injection on the DC breakdown.

• The Korean Journal of Pain
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• v.33 no.1
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• pp.48-53
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• 2020

Background: The aim of this study was to clarify the topographical relationship between the accessory nerve (AN) and transverse cervical artery (TCA) to provide safe and convenient injection points for AN blockade. Methods: This study included 21 and 30 shoulders of 14 embalmed Korean adult cadavers and 15 patients, respectively, for dissection and ultrasound (US) examination. Results: The courses of the TCA and AN in the scapular region were classified into four types based on their positional relationships. Type A indicated the nerve that was medial to the artery and ran parallel without changing its location (38%). In type B (38%), the nerve was lateral to the artery and ran parallel without changing its location. In type C (19%), the nerve or artery traversed each other only once during the whole course. In type D (5%), the nerve or artery traversed each other more than twice forming a twist. At the levels of lines I-IV, the nerve was relatively close to the artery (approximately 10 mm). TCAs were observed in all specimens around the superior angle of the scapula at the level of line II, whereas they were not found below line VI. In US images of the patients, the TCA was commonly observed at the level of line II (93.3%) where all ANs and TCAs were observed in cadaveric dissection. Conclusions: The results expand the current knowledge of the relation between the AN and TCA, and provide helpful information for selective diagnostic nerve blocks in the scapular region.

• Journal of Sensor Science and Technology
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• v.12 no.5
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• pp.218-224
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• 2003

The devices of n-channel poly silicon thin film transistors(TFTs) hydrogenated by plasma, $H_2$ and $H_2$/plasma processes are fabricated. The carriers sensitivity characteristics are analyzed with voltage bias stress at the gate oxide. The parametric sensitivity characteristics caused by electrical stress conditions in hydrogenated devices are investigated by measuring the drain current, threshold voltage($V_{th}$), subthreshold slope(S) and maximum transconductance($G_m$) values. As a analyzed results, the degradation characteristics in hydrogenated n-channel polysilicon thin film transistors are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The generation of traps in gate oxide are mainly dued to hot electrons injection into the gate oxide from the channel region.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.252-257
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• 1997

Organic EL devices, which have the sing3e-layer structure of ITO(indium-tin-oxide) /PPV(poly(p-phenylene vinylene))/cathode and the double-layer structure of ITO/PVK (poly(N- vinylcarbazole)) /PPV/cathode, were fabricated and their electro-optical properties were investigated. Experimental results, in single-layer structure, shown that the increment of temperature for thermal conversion of PPV film from $140^{\circ}C$ to $260^{\circ}C$ decreases the maximum luminance from $118.8\;cd/m^{2}$(20V) to $21.14\;cd/m^{2}$(28V) and shift the maximum peak of EL spectrum from 500nm to 580nm. The lower the work function of cathode is, the more the luminance and injection current of device. In double-layer structure, as the concentration of PVK solution decreases from 0.5 wt% to 0.05 wt%, the luminance of device increases from $70.71\;cd/m^{2}$(32V) to $152.7\;cd/m^{2}$(26V).

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.