• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.907-911
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• 2006

In this paper, we propose a new structure that improves the on-state voltage drop and switching speed in Insulated Gate Bipolar Transistors(IGBTs), which can be widely used in high voltage semiconductors. The proposed structure is unique in that the collector area is divided by $SiO_2$, whereas the conventional IGBT has a planar P+ collector structure. The process and device simulation results show remarkably improved on-state and switching characteristics. Also, the current and electric field distribution indicate that the segmented collector structure has increased electric field near the $SiO_2$ corner, which leads to an increase of electron current. This results in a decrease of on-state resistance and voltage drop to $30%{\sim}40%$. Also, since the area of the P+ region is decreased compared to existing structures, the hole injection decreases and leads to an increase of switching speed to 30 %. In spite of some complexity in process procedures, this structure can be manufactured with remarkably improved characteristics.

• 전자공학회논문지A
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• 제33A권12호
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• pp.39-46
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• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.

• 전력전자학회논문지
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• 제3권3호
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• pp.222-230
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• 1998

본 논문에서는 스너버 회로를 사용하지 않고 턴-온시 역회복 전류의 영향과 턴-오프 시 구동되는 IGBT에 발생하는 과전압을 제한할 수 있는 새로운 IGBT 게이트 구동회로를 제안한다. 제안하는 턴-온 게이트 구동기법은 턴-온 지연 시간을 증가시키지 않고 게이트-에이터 전압이 문턱전압 이상이 되면 IGBT의 입력 커패시턴스를 증가시킴으로써 게이트-에이터 전압의 증가율을 감소시키는 특징을 갖는다. 제안하는 턴-오프 게이트 구동기법은 전류의 크기에 따라 과전압을 제한하여 단락사고와 같은 대전류가 흐르는 경우 더욱 효과적으로 과전압을 제한하는 특징을 가진다. 또한, 여러 가지 조건에서 실험을 수행하여 제안한 IGBT 게이트 구동회로의 타당성을 검증한다.

• 한국세라믹학회지
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• 제44권12호
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• pp.720-726
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• 2007

Current collectors of SOFC play a significant role on the performance of power generation. In this study a single cell stacked SOFC was assembled using Ag-mesh as a cathode current collector, and evaluated its performance. No gas leakages of the single cell stack occurred in the tests of gas detection and OCV measurement. The OCV and initial power of the stack were 1.09V and $0.45W/cm^2$, respectively, under the flow rates of air at 2,500 cc/min and $H_2$ at 1,000 cc/min at the test temperature of $750^{\circ}C$. A degradation rate of 44.0% was measured during the prolonged time of 307 h. The relatively low durability of the tested single cell stack was found to be the evaporation of Ag-mesh at the current corrector.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.255-258
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• 2001

This paper proposes a new structure of a fiber-optic illuminator using high Lux RGB LEDs. A simulation program, LightTools, is used for the verification of the model. An LED mounting holder containing 74 RGB LEDs is used as a basic part of its light collector. Since the light output level of current LED lamps is still far below that of conventional lamps, it is required to double the right output in order to replace a conventional illuminator with a halogen lamp. An additional cone-type reflector is installed hemispherically and the resulting structure comprises a basic collector unit. To further increase the output two collector units are connected together in series. As the result, the light output increases nearly 70% with compared to a collector with a basic structure. The system efficiency can be increased more than 8 times with compared to conventional one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• 소성∙가공
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• 제23권3호
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• pp.171-177
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• 2014

The current collector for the molten carbonate fuel cell (MCFC) which has sheared protrusions is manufactured by the three-stage forming process that integrates slitting, preforming and final forming. Due to the repetition of sheared protrusions, an effective simulation method is required to predict the mechanical behavior. In the current study, a sheet with sheared protrusions was assumed to be an orthotropic plate, which has the same length, width and height. FEM simulations were conducted to evaluate the homogenized properties of the current collector, which has 4 (longitudinal direction) x 4 (transverse direction) sheared protrusions. The simulation model was constructed using hexahedral mesh coarsening. From the verification examples, it was found that the proposed simulation method was efficient within reasonable accuracy. The calculated homogenized properties can be applied to the design of a stack for molten carbonate fuel cells and the prediction of mechanical behavior for other applications.