• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.246-250
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• 2021

TFTs technologies with as high mobility as possible is essential for high-performance large displays. TFTs using nanocrystalline silicon thin films can achieve higher mobility. In this work, the change of the crystalline volume fraction at different hydrogen dilution ratios was investigated by depositing nc-Si:H thin films using PECVD. It was observed that increasing hydrogen dilution ratio increased not only the crystalline volume fraction but also the crystallite size. The thin films with a high crystalline volume fraction (55%) and a low defect density (10¹⁷ cm^-3·eV^-1) were used as top gate TFTs channel layer, leading to a high mobility (55 cm²/V·s). We suggest that TFTs of high mobility to meet the need of display industries can be benefited by the formation of thin film with high crystalline volume fraction as well as low defect density as a channel layer.

• Journal of Powder Materials
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• v.10 no.1
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• pp.51-56
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• 2003

To investigate the effect of the parameters of the plasma arc discharge process on the particle formation and particle characteristics of the iron nano powder, the chamber pressure, input current and the hydrogen volume fraction in the powder synthesis atmosphere were changed. The particle size and phase structure of the synthesized iron powder were studied using the FE-SEM, FE-TEM and XRD. The synthesized iron powder particle had a core-shell structure composed of the crystalline $\alpha$-Fe in the core and the crystalline $Fe_3O_4$ in the shell. The powder generation rate and particle size mainly depended on the hydrogen volume fraction in the powder synthesis atmosphere. The particle size increased simultaneously with increasing the hydrogen volume fraction from 10% to 50%, and it ranged from about 45nm to 130 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.145-152
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• 2011

Mechanical and property corrosion resistance of Mg-Zn-Y alloys with an atomic ratio of Zn/Y of 6.8 are investigated using optical microscopy, scanning electron microscopy, transmission electron microscopy, uniaxial tensile test and corrosion test with immersion and dynamic potentiometric tests. The alloys showed an in-situ composite microstructure consisting of ${\alpha}$-Mg and icosahedral phase (I-phase) as a strengthening phase. As the volume fraction of the I-phase increases, the yield and tensile strengths of the alloys increase while maintaining large elongation (26~30%), indicating that I-phase is effective for strengthening and forms a stable interface with surrounding ${\alpha}$-Mg matrix. The presence of I-phase having higher corrosion potential than ${\alpha}$-Mg, decreased the corrosion rate of the cast alloy up to I-phase volume fraction of 3.7%. However further increase in the volume fraction of the I-phase deteriorates the corrosion resistance due to enhanced internal galvanic corrosion cell between ${\alpha}$-Mg and I-phase.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.178-178
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

• Journal of Powder Materials
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• v.27 no.5
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• pp.414-419
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• 2020

In the present study, we investigated the austenite stability of a sintered Fe-based nanocrystalline alloy. The volume fraction of austenite was measured based on the X-ray diffraction data of sintered Fe-based nanocrystalline alloys, which were prepared by high-energy ball milling and spark plasma sintering. The sintered alloy samples showed a higher volume fraction of austenite at room temperature as compared to the equilibrium volume fraction of austenite obtained using thermodynamic calculations, which resulted from the nanosized crystalline structure of the sintered alloy. It was proved that the austenite stability of the sintered Fe-based alloy increased with a rise in the amount of austenite stabilizing elements such as Mn, Ni, and C; however, it increased more effectively with a decrease in the actual grain size. Furthermore, we proposed a new equation to predict the martensite starting temperature for sintered Fe-based alloys.

• Steel and Composite Structures
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• v.36 no.6
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• pp.631-642
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• 2020

This paper studies nonlinear stability behavior of a nanocrystalline silicon curved nanoshell considering strain gradient size-dependency. Nanocrystallines are composite materials with an interface phase and randomly distributed nano-size grains and pores. Imperfectness of the curved nanoshell has been defined based on an initial deflection. The formulation of nanocrystalline nanoshell has been established by thin shell theory and an analytical approach has been used in order to solve the buckling problem. For accurately describing the size effects related to nano-grains or nano-pores, their surface energies have been included. Nonlinear stability curves of the nanoshell are affected by the size of nano-grain, curvature radius and nano-pore volume fraction. It is found that increasing the nano-pore volume fraction results in lower buckling loads.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.2-257.2
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• 2015

In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1320-1322
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• 2005

Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.