• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.190-191
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• 2006

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.34-34
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• 2000

ZnO 박막은 대칭 육방정계(hexagonal) wurtzite-type crystal로써 결정구조에서의 이방성, 비화학양론 결합구조와 다양한 전기적, 광학적 그리고 타성파적 성질 때문에 현재 여러 응용분양에서 각광을 받고 있는 재료 중의 하나이다. 이러한 특성을 갖는 ZnO 박막은 결정학적으로 기판에 수직인 c-축 우선방위현상(preferred orientation)을 나타내며 압전 특성을 이용하여 응용을 할 경우 이 c-축 우선방위현상에 따라 압전 특성에 큰 차이가 있으며 ZnO 박막의 형성 조건에 의해 c-축 우성배향성은 큰 차이가 있다. 특히 스퍼터법을 이용하여 ZnO 박막을 형성하는 경우에는 투입전력, 기판온도, 분위기 가스압력, 타겟간 거리등의 증착조건에 의해 결정학적 및 전기적 특성이 크게 영향을 받게 된다. 따라서 결정학적으로 양호하며 고품위의 특성을 갖는 ZnO 박막을 제작하기 위해서는 최적의 증착조건을 확립하여 ZnO 박막을 제작할 필요가 있다. 본 연구에서 사용된 대향 타겟식 스퍼터장치는 두 개의 타겟이 서로 마주보게 배치되어 있고 양 타겟에 수직으로 분포하고 있는 자계가 ${\gamma}$-전자를 구속하게 되어 고밀도의 플라즈마를 형성할 수가 있다. 따라서 10-4Torr에서도 안정한 방전을 유지할 수가 있으며 기판의 위치가 플라즈마로부터 이격되어 (plasma-free)있는 위치에 있기 때문에 플라즈마내의 높은 에너지를 갖는 입자들의 기판충돌을 최대한 억제하여 고품위의ZnO 박막을 제작할 수가 있다. 이러한 특징을 갖는 대향타겟식스퍼터장치를 이용하여 본 연구에서는 비정질 slide glass를 기판으로 하여 ZnO 박막을 증착하였으며 XRD(X-ray Diffractometer)를 이용하여 증착된 ZnO 박막의 결정학적 특성을 측정하였다. ZnO 박막은 산소 가스압력과 기판온도, 인가 전류를 변화시켜가며 증착하였으며 이에 따른 박막의 결정성 변화를 알아보았다. 기판온도를 실온에서 점차 증가시켜나가면 $\Delta$$\theta$50은 급격히 감소하며 30$0^{\circ}C$에서는 결정성이 우수한 막을 얻을 수 있었다. 또한 산소 가스 압력이 0.5~1mTorr에서 $\Delta$$\theta$50은 양호한 값을 나타내었지만 그 이상에서는 c-축 배향성이 나빠짐을 확인하였다. 따라서 대향타겟식스퍼터 장치를 이용하여 ZnO 박막을 증착시 가스압력 0.5~1mTorr, 기판온도 20$0^{\circ}C$이상의 막 제작조건에서 결정성이 우수하게 나타나는 것을 확인할 수 있었다.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.5
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• pp.227-233
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• 2016

Phase transformation phenomenon at high temperature was investigated by using designed TiAl-Nb alloys with addition of the ${\beta}$ stabilizer. Examination of dendritic morphologies in arc-melted button ingot could reveal the crystallography of the primary solidification phase. It was found that the addition of ${\beta}$ stabilizer(Nb) shifted the high temperature region of the binary Ti-Al phase diagram to the high Al composition side so that ${\beta}$ phase forms as a primary crystal even at higher Al composition compared with the binary Ti-Al system. The ${\beta}$ was found to be the primary solidification phase for alloys with Al content less than about 52 at.%. The composition of ${\beta}$ solidification in Ti-Al-Nb ternary system could be determined from the partial liquidus projection which was constructed by observing the microstructure of arc-melted buttons. The Ti-46Al-(6, 8)Nb composition was selected for ${\beta}$ solidification and the directional solidification was performed by a floating zone-type DS apparatus at the growth rate 30 mm/hr respectively.

• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1061-1066
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• 1997

The complexes M(CO)4-1,2-(PPh2)2-1,2-C2B10H10 (M=Cr 2a, Mo 2b, W 2c) have been prepared in good yields from readily available bis-diphenylphosphino-o-carboranyl ligand, closo-1,2-(PPh2)2-1,2-C2B10H10 (1), by direct reaction with Group Ⅵ metal carbonyls. The infrared spectra of the complexes indicate that there is an octahedral disposition of chelate bis-diphenylphosphino-o-carboranyl ligand around the metal atom. The crystal structure of 2a was determined by X-ray diffraction. Complex 2a crystallizes in the monoclinic space group P21/n with cell parameters a = 12.2360(7), b = 17.156(1), c = 16.2040(6) Å, V = 3354.1(3) Å3, and Z =4. Of the reflections measured a total of 2514 unique reflections with F2 > 3σ(F2) was used during subsequent structure refinement. Refinement converged to R1 = 0.066 and R2 = 0.071. Structural studies showed that the chromium atom had a slightly distorted pseudo-octahedral configuration about the metal center with two phosphine groups of o-carborane occupying the equatorial plane cis-orientation to each other. These metal carbonyl complexes are rapidly converted to the corresponding metal carbene complexes, [(CO)3M=C(OCH3)(CH3)]-1,2-(PPh2)2-1,2-C2B10H10 (M= Cr 3a, Mo 3b, W 3c), via alkylation with methyllithium followed by O-methylation with CF3SO3CH3.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.586-590
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• 2009

The effects of additives on the surface morphology and physical properties of copper electrodeposited on polyimide(PI) film were investigated here. Two kinds of additives, an activator(additive A) and a leveler(additive B),were used in this study. Electrochemical experiments, in conjunction with scanning electron microscopy(SEM), X-ray diffraction(XRD) and a four-point probe, were performed to characterize the morphology and mechanical characteristics of copper electrodeposited in the presence of the additives. The surface roughness, crystal growth orientation and resistivity could be controlled using various quantities of additive B. High resistivity and lower peel strength were observed on the surface of the copper layer electroplated onto the electrolyte with no additive B. However, a uniform surface, lower resistivity and high flexibility were obtained with a combination of 20 ppm of additive A and 100 ppm of additive B.

• Textile Coloration and Finishing
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• v.34 no.1
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• pp.68-75
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• 2022

The breathable film refers to a high-functional film that allows gas and water vapor to pass through very fine and sophisticated pores but not liquid. In this research, the breathable film was prepared based on linear low-density polyethylene (LLDPE) and CaCO₃ particles by extrude method. The LLDPE composite film containing CaCO₃ particles had excellent mechanical properties and functionalties. The drawing is a technologically simple and excellent method for improving the mechanical properties of composite films. In this work, the effects of draw ratio on morphology, crystallinity, pore size distribution, mechanical properties, and water vapor permeability of the films were examined. The results revealed that both surface morphology and breathability were affected by the influence of chain orientation and crystal growth with increasing the draw ratio. The mechanical properties were improved with increasing the draw ratio.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Microbiology and Biotechnology Letters
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• v.32 no.2
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• pp.110-116
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• 2004

The over-expression in E. coli of the pHLN1-SO(＋) and pHLN2-80(－) plasmids cloned an insecticidal crystal protein (ICP) gene (crylAal type) from Bacillus thuringiensis var. kurstaki HD 1 was investigated through in part, the deletion of -80 bp promoter and an alternative change of cloning vector system. Two recombinant plasmids were constructed in an attempt to analyze the over-expression of the ICP in relations to its gene structure possessing only -14 bp ［Shine-Dalgarno (SD) sequence of -80 bp promoter］. Also, anther two recombinant plasmids similarly cloned the icp gene in a different vector system. The amounts of ICP produced from the recombinants were measured by SDS-PAGE and confirmed by Western blot analysis. One clone, pHLRBS1-14 clone in which only the SD sequence in the inverted orientation icp gene appeared, was more evident than the pHLRBS2-14 clone in which only the -14 bp SD sequence of the right orientated icp gene was shown to exist. The pHLN2-80(－) clone produced more ICP proteins than the pHLRBS1-14 clone. In the two clones, pHLNUC1-80 right-oriented icp gene and the pHLNUC2-80 clone inverted-orientation icp gene in a new different vector, the pHLNUC2-80 produced more ICP proteins in E. coli system. These results indicate that the P/ac promoter, the inverted icp gene insertion and -80 bp promoter (-66 bp part of the icp gene promoters), were concerned with the expression of the icp gene in the recombinant plasmids. In addition, the expression mechanism might result from the disruption of the transcription-suppressing regions in the promoter regions.

• Economic and Environmental Geology
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• v.17 no.2
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• pp.115-139
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• 1984

The Cu-Pb-Zn-Ag hydrothermal vein-type deposits which comprise the Sambong mine occur within calc-alkaline volcanics of the Cretaceous Gyeongsang Basin. The ore mineralization took place through three distinct stages of quartz (I and II stages) and calcite veins (III stage) which fill the pre-existing fault breccia zones. These stages were separated in time by tectonic fracturing and brecciation events. The reflection variations of one mineral depending on mineralization sequence are considered to be resulted from variation in its chemical composition due to different physico-chemical conditions in the hydrothermal system. The reflection power of sphalerite increases with the content of Fe substituted for Zn. Reflectances of the sphalerite grain are lower on (111) than on (100) surface. The spectral profiles depend on the internal reflection color. Sphalerite, showing green, yellow and reddish brown internal reflection, have the highest reflection power at $544m{\mu}$ (green), $593m{\mu}$ (yellow) and $615m{\mu}$ (red) wavelength, respectively. Chalcopyrite is recognized as biaxial negative from the reflectivity data of randomly oriented grains measured at the most sensitivity at $544m{\mu}$. The microindentation hardness against the Fe content (wt. %) for the sphalerite increases to 8.05% Fe and then decreases toward 9.5% Fe content. Vickers hardness of the sphalerite is considerably higher on surface of (100) than on (111). The relationship between Vickers hardness and crystal orientation of the galena was determined to be $VHN_{(111)}$ > $VHN_{(210)}$ > $VHN_{(100)}$. The softer sulfides have the wider variation of the diagonal length in the indentation. Diagonal length in the indentation is pyrite