• Title/Summary/Keyword: crystal engineering

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Exploring the Properties and Potential of Single-crystal NCM 811 for Lithium-ion Batteries

  • Yongseok Lee;Seunghoon Nam
    • Corrosion Science and Technology
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    • v.22 no.1
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    • pp.36-43
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    • 2023
  • Single-crystal Ni-rich NCM is a material that has drawn attention in the field of lithium-ion batteries due to its high energy density and long cycle life. In this study, we investigated the properties of single-crystal NCM 811 and its potential for use in lithium-ion batteries. High-quality single crystals of NCM 811 were successfully synthesized by crystal growth via a flux method. The single-crystal nature of the samples was confirmed through detailed characterization techniques, such as scanning electron microscopy and x-ray diffraction with Rietveld refinement. The crystal structure and electrochemical performances of the single-crystal NCM 811 were analyzed and compared to its poly-crystal counterpart. The results indicated that single-crystal NCM 811 had electrochemical performance and thermal stability superior to poly-crystalline NCM 811, making it a suitable candidate for high-performance batteries. The findings of this study contribute to a better understanding of the characteristics and potential of single-crystal NCM 811 for lithium-ion batteries.

Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method (6H-SiC 종자 결정을 사용하여 PVT법으로 성장된 AlN 결정 연구)

  • Shin, Hee-Won;Lee, Dong-Hoon;Kim, Hwang-Ju;Park, Mi-Seon;Jang, Yeon-Suk;Lee, Won-Jae;Kim, Jung-Gon;Jeong, Seong-Min;Lee, Myung-Hyun;Seo, Won-Seon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.1
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    • pp.49-52
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    • 2016
  • The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

Vertical Alignment Nematic Liquid Crystal Display with Patterned Electrode Using Positive Liquid Crystal Materials

  • Shin, Hun-Ki;Yoon, Tae-Hoon;Kim, Jae-Chang
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.499-501
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    • 2007
  • We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous vertical-alignment configuration with positive liquid crystal.

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Thermal Stresses Near the Crystal-Melt Interface During the Floating-Zone Growth of CdTe Under Microgravity Environment (미세중력장 CdTe 흘로우팅존 생성에서 결정체-용융액 계면주위의 열응력)

  • Lee Kyu-Jung
    • Journal of computational fluids engineering
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    • v.3 no.1
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    • pp.100-107
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    • 1998
  • A numerical analysis of thermal stress over temperature variations near the crystal-melt interface is carried out for a floating-zone growth of Cadmium Telluride (CdTe). Thermocapillary convection determines crystal-melt interfacial shape and signature of temperature in the crystal. Large temperature gradients near the crystal-melt interface yield excessive thermal stresses in a crystal, which affect the dislocations of the crystal. Based on the assumption that the crystal is elastic and isotropic, thermal stresses in a crystal are computed and the effects of operating conditions are investigated. The results show that the extreme thermal stresses are concentrated near the interface of a crystal and the radial and the tangential stresses are the dominant ones. Concentrated heating profile increases the stresses within the crystal, otherwise, the pulling rate decreases the stresses.

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Fabrication and electro optical properties of stressed liquid crystal cell

  • Lee, Jung-Min;Park, Jin-Seol;Kang, Dae-Seung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.681-682
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    • 2009
  • We fabricated a stressed liquid crystal cell by mixing liquid crystal with a photo-polymer. By carefully choosing the mixing ratio between liquid crystal and the polymer, and by suitable mechanical shearing of the substrates, we demonstrated feasible electro optical properties for displays.

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Shearing and Electro-optical Properties of Stressed Cholesteric Liquid Crystal Cells

  • Lee, Jung-Min;Kang, Dae-Seung
    • Journal of Information Display
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    • v.11 no.2
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    • pp.91-93
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    • 2010
  • The shearing effects on the electro-optical properties of a stressed cholesteric liquid crystal were investigated. A photopolymer was dispersed in the cholesteric liquid crystal cell. By carefully choosing the mixing ratio between the liquid crystal and the photoreactive monomer, and by applying suitable mechanical shearing on the substrates, a cholesteric liquid crystal display with a low threshold voltage and no alignment layer was demonstrated.

Growth of $Er:LiNbO_3$ single crystal thin film with high crystal quality by LPE method (LPE법에 의한 고품질 $Er:LiNbO_3$ 단결정 박막의 성장)

  • Shin, Tong-Il;Lee, Hyun;Shur, Joong-Won;Byungyou Hong;Yoon, Dae-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.305-320
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    • 1999
  • It was grown Er2O3 doped LiNbO3 single crystal thin films with high crystal quality by liquid phase epitaxial (LPE) method. Er2O3 was doped with a concentration of 1, 3, and 5 mol% respectively. After the growth of single crystal thin film, we examined the crystallinity and the lattice mismatch along the c-axis between the film and the substrate with the variation of Er2O3 dopant using X-ray double crystal technique. There were no lattice mismatches along the c-axis for the undoped and the films doped with 1 and 3 mol% of Er2O3. For 5 mol% of Er2O3 doped film, there was a lattice mismatch of 7.86x10-4nm along the c-axis.

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Growth of Er : $LiNbO_{3}$ single crystal thin film with high crystal quality by LPE method

  • Tong-Ik Shin;Hyun Lee;Joong-Won Shur;Byungyou Hong;Dae-Ho Yoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.3
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    • pp.295-298
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    • 1999
  • High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

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A study on the development of jewelry design based on the diamond crystal structure (다이아몬드 결정구조를 모티브한 주얼리 디자인 개발에 관한 연구)

  • Eunju Park;Soi Moon;Jeongwon Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.4
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    • pp.158-164
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    • 2023
  • The meaning of the diamond crystal structure and the formative beauty of the crystal form were designed from a new perspective and expressed in jewelry. In this study, we examined the literature on the crystal structure of diamonds and analyzed cases of jewelry design based on the formative characteristics of diamond crystal structure. we newly interpreted the meaning and value of diamond crystal structure, and studied the figurative design that can show the aesthetic effect of the crystal structure by designing the diamond crystal structure as jewelry. By presenting jewelry designs that take advantage of the symmetry effect of the diamond crystal structure and the repetition of the sculptural beauty, we hope that the fundamental beauty and cultural meaning of gemstones will be re-recognized.

Crystallization of Benzene from Benzene-Cyclohexane Mixtures by Layer Melt Crystallization - Phenomena of Impurity Inclusion in Crystal - (경막형 용융결정화에 의한 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화-결정의 불순물 내포현상-)

  • Kim, Kwang-Joo;Lee, Jung-Min;Ryu, Seung-Kon
    • Applied Chemistry for Engineering
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    • v.8 no.3
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    • pp.389-394
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    • 1997
  • The distribution of impurity included in benzene layer crystal was explored in layer crystallization of cyclohexane and benzene mixtures. The influence of crystal growth rate on crystal purity was investigated. All experimental results for bezene-cyclohexane system obtained in layer crystallizer have been evaluated with the criterion of Wintermantel. The purity of crystal decreases with increasing degree of subcooling, decreasing feed concentration and increasing crystal growth rate. The crystal growth rate was a key parameter to determine the inclusion of impurity in crystals. The results obtained from runs performed at increasing crystallization time(i.e. crystal thickness) have clearly shown that migration of inclusions within crystal layer to the melt, leading to the removal of impurity occurs. The diffusion of impurity which takes place during the crystallization from the beginning, enhances a further purification of the crystal layer if that underwent a thermal gradient after growth of the layer crystal stops.

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