• Title/Summary/Keyword: coupled electric field

Search Result 153, Processing Time 0.026 seconds

A study on Etch Characteristics of {Y-2}{O_3}$ Thin Films in Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 {Y-2}{O_3}$ 박막의 식각 특성 연구)

  • Kim, Yeong-Chan;Kim, Chang-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.38 no.9
    • /
    • pp.611-615
    • /
    • 2001
  • Y$_2$O$_3$ thin films have been proposed as a buffering insulator of metal/ferroelectric/insulator/semiconductor field effect transistor(MFISFET)-type ferroelectric random access memory (FRAM). In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma(ICP). The etch rates of $Y_2$O$_3$ and YMnO$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were 302$\AA$/min, and 2.4 at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2 respectively. Optical emission spectroscopy(OES) was used to understand the effects of gas combination on the etch rate of $Y_2$O$_3$ thin film. The surface reaction of the etched $Y_2$O$_3$ thin films was investigated by x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that there was chemical reaction between Y and Cl. This result was confirmed by secondary ion mass spectroscopy(SIMS) analysis.

  • PDF

Development of an Improved Numerical Methodology for Design and Modification of Large Area Plasma Processing Chamber

  • Kim, Ho-Jun;Lee, Seung-Mu;Won, Je-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.221-221
    • /
    • 2014
  • The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

  • PDF

Precise Detection of Buried Underground Utilities by Non-destructive Electromagnetic Survey (비파괴 전자탐사에 의한 지하 매설물의 정밀탐지)

  • Shon, Ho-Woong;Lee, Seung-Hee;Lee, Kang-Won
    • Journal of the Korean Society for Nondestructive Testing
    • /
    • v.22 no.3
    • /
    • pp.275-283
    • /
    • 2002
  • To detect the position and depth of buried underground utilities, method of Ground Penetrating Radar(GPR) survey is the most commonly used. However, the skin-depth of GPR is very shallow, and in the places where subsurface materials are not homogeneous and are compose of clays and/or salts and gravels, GPR method has limitations in application and interpretation. The aim of this study is to overcome these limitations of GPR survey. For this purpose the site where the GPR survey is unsuccessful to detect the underground big pipes is selected, and soil tests were conducted to confirm the reason why GPR method was not applicable. Non-destructive high-frequency electromagnetic (HFEM) survey was newly developed and was applied in the study area to prove the effectiveness of this new technique. The frequency ranges $2kHz{\sim}4MHz$ and the skin depth is about 30m. The HFEM measures the electric field and magnetic field perpendicular to each other to get the impedance from which vertical electric resistivity distribution at the measured point can be deduced. By adopting the capacitive coupled electrodes, it can make the measuring time shorter, and can be applied to the places covered by asphalt an and/or concrete. In addition to the above mentioned advantages, noise due to high-voltage power line is much reduced by stacking the signals. As a result, the HFEM was successful in detecting the buried underground objects. Therefore this method is a promising new technique that can be applied in the lots of fields, such as geotechnical and archaeological surveys.

Computational Simulation of Lightning Strike on Aircraft and Design of Lightning Protection System (항공기 낙뢰 전산 시뮬레이션 및 보호시스템 설계)

  • Kim, Jong-Jun;Baek, Sang-Tae;Song, Dong-Geon;Myong, Rho-Shin
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.44 no.12
    • /
    • pp.1071-1086
    • /
    • 2016
  • The safety of aircraft can be threatened by environmental factors, such as icing, turbulence, and lightning strike. Due to its adverse effects on aircraft structure and electronic components of aircraft, lightning strike is one of the biggest hazards on aircraft safety. Lightning strike can inject high voltage electric current to the aircraft, which may generate strong magnetic field and extreme hot spots, leading to severe damage of structure or other equipment in aircraft. In this work, mechanism of lightning strike and associated direct and indirect effects of lightning on aircraft were studied. First, on the basis of aircraft lightning regulations provided by Aerospace Recommended Practice (ARP), we considered different lightning waveform and zones of an aircraft. A coupled thermal-electrical computational model of ABAQUS was then used for simulating flow of heat and electric current caused by a lightning strike. A study on fuel tank, with and without lightning protection system, was also conducted using the computational model. Finally, electric current flow on two full scale airframes was analyzed using the EMA3D code.

Papers : Three - dimensional assumed strain solid element for piezoelectric actuator/sensor analysis (3 차원 가정변형률 솔리드 요소를 이용한 압전 작동기/감지기 해석)

  • Jo, Byeong-Chan;Lee, Sang-Gi;Park, Hun-Cheol;Yun, Gwang-Jun;Gu, Nam-Seo
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.30 no.2
    • /
    • pp.67-74
    • /
    • 2002
  • The paper deals with a fully assumed strain soild element that can be used for modeling of thin sensors and actuators. To solve fully coupled field problems, the eledtric potential is regarded as a nodal degree of freedom in addition to three translations in an eighteen node assumed strain soild element. Therefore, the induced electric potential can be calculated for a prescribed load and the actuation displacement can be computed for an input voltage. Since the assumed strain solid element can alleviate locking. A finite element code is developed based on the formulation and typical numerical examples are solved for code validation. Using the code, we have conducted parametric study for THUNDER actuator. It is found that a particular combination of materials for layer curvature of THUNDER improves the actuation displacement.

A Study on Coupling Coefficient and Resonant Frequency Controllable Internal PIFA (결합계수 및 공진 주파수 조절이 가능한 내장형 PIFA에 관한 연구)

  • Lee, Sang-Hyun;Lee, Moon-Woo
    • Journal of the Korea Society of Computer and Information
    • /
    • v.15 no.10
    • /
    • pp.99-104
    • /
    • 2010
  • In this paper, the internal antenna for mobile communication handset which is able to control both coupling coefficient and resonant frequency without any major modification of radiator and ground plane of PIFA(Planner Inverted F Antenna). The resonant frequency as well as amount of coupling between feeding point and shorting post can be adjusted by changing inductance. Because the inductor is connected on shorting post where the strength of electric field is weak, the performance reduction of the proposed antenna is very small enough to neglect. For the variation of the inductance value within 3.3nH, the resonant frequency of antenna can have operating range of 1650MHz ~ 1830MHz. And as be increased the inductance, the coupling coefficient of antenna is over coupled. This means that it can be electrically controlled the resonant frequency and input impedance of antenna by inductance and minimized the mismatch loss. Size reduction of 10% for PIFA is obtained without any major modifications of antenna elements. For the frequency range from 1650 to 1830MHz, reduction of the measured antenna gain is within 0.93dB as varying the value of inductance from 0 to 3.3nH.

Solid State Cesium Ion Beam Sputter Deposition

  • Baik, Hong-Koo
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.5-18
    • /
    • 1996
  • The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

  • PDF

중성빔 식각을 이용한 Metal Gate/High-k Dielectric CMOSFETs의 저 손상 식각공정 개발에 관한 연구

  • Min, Gyeong-Seok;O, Jong-Sik;Kim, Chan-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.287-287
    • /
    • 2011
  • ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

  • PDF

Design of High-Sensitivity Compact Resonator using Interdigital-Capacitor Structure for Chipless RFID Applications (인터디지털-커패시터 구조를 이용한 Chipless RFID용 고감도 소형 공진기 설계)

  • Yeo, Junho;Lee, Jong-Ig
    • Journal of Advanced Navigation Technology
    • /
    • v.25 no.1
    • /
    • pp.90-95
    • /
    • 2021
  • In this paper, the design method for a high-sensitivity compact resonator for chipless RFID tags is proposed. Proposed high-sensitivity compact resonator uses an interdigital-capacitor structure instead of a capacitor-shaped strip structure in a conventional ELC resonator. The length of the electrode plate of the IDC structure is longer than that of the conventional capacitor-shaped structure, resulting in a larger equivalent capacitance of the resonator. This can lower the resonant peak frequency of the RCS characteristic. Two resonators with the same length of the square loop and the width of the strip are fabricated on an RF-301 substrate with a thickness of 0.8 mm. The experiment results show that the resonant peak frequency and value of the bistatic RCS for the ELC resonator were 4.305 GHz and -30.39 dBsm, whereas those of the proposed IDC resonator were 3.295 GHz and -36.91 dBsm. Therefore, the size of the resonator is reduced by 23.5% based on the measured resonant peak frequency of the RCS characteristic.

Environmental Effect of the Reduced Slag in the Electric Furnace (전기로 제강 환원슬래그 혼합토의 환경적 영향)

  • Na, Hyunsu;Yoon, Yeowon;Yoon, Gillim
    • Journal of the Korean GEO-environmental Society
    • /
    • v.12 no.7
    • /
    • pp.23-29
    • /
    • 2011
  • The oxidation slag has been widely used in civil engineering project, whereas the reduced slag from electric furnace has yet to be applied. Consequently in order to find out the recycling method in civil engineering field, the mineral compositions of the reduced slag were analyzed and some tests on water quality were performed to estimate the potential release of toxic compounds. Slag-soil mixtures of 0, 10, 20 and 30%(dry weight) soil were prepared in lysimeter columns and the effluents were collected with the period of one, two and four week options in closed system, respectively. The result from qualitative and quantitative analysis using X-ray Diffraction(XRD) and X-ray Fluorescence(XRF) indicates that the main mineral of the reduced slag is $Ca_2(SiO_4)$, a kind of calcium silicate. Also, the leaching medium analyzed by Inductively Coupled Plasma Optical Emission Spectroscopy(ICP-OES) showed that main heavy metals such as Al, Fe and Mn are included in the reduced slag due to the effect of steel production process. It can be seen that the leachate does not violate the regulation guide line of waste material of heavy metal. Also the pH levels were increased from pH 6.9 for 0% soil to pH 10 for 30% soil. However the influence on leachate circulation period of one through four weeks was negligible.