• Journal of the Korean Wood Science and Technology
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• 제30권2호
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• pp.151-157
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• 2002

갈색부후균 Tyromyces palustris를 이용하여 CCA, CCFZ처리 목재에서 구리를 제거하였다. 균에 의한 구리의 제거효율을 높이기 위한 전처리 방법으로서 증기압처리와 수산처리를 검토하였으며, 적정 배양 방법을 찾기 위하여 진탕배양, 고체배양, 정치배양에서 구리 제거율을 비교하였다. 전처리 방법에서, 증기압 처리만으로는 효과적인 구리제거가 불가능하였으며, 수산처리는 구리제거율은 낮았으나 수산처리 후 균처리를 하면 제거율이 향상되었다. 배양 방법에서는 정치 배양의 구리 제거효율이 높게 나타났다. 대량 배양을 위한 공기부양식 생물반응기에 의한 구리의 제거율은 7일 배양 이후 61%의 제거율을 보였다. T. palustris에 의한 구리제거기작을 탐색하기 위하여 배양액 중에 생성된 물질을 LC/Mass 분석 결과 T. palustris에서 분비되어진 수산과 방부처리 목재 중의 구리가 결합된 수산구리 착염체의 형성이 배양액 중에 존재함이 확인됨으로 균체 외 수산의 작용이 처리재의 구리제거에 크게 관여함이 밝혀졌다.

• Journal of the Korean Wood Science and Technology
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• 제26권1호
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• pp.57-62
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• 1998

In this research, the removal or uptake of heavy metals such as coppers by using oxalic acid metabolism of wood rot fungi, Tyromyces palustris were endeavored. As results, the addition of oxalic acid to copper containing culture did not cause the mycelium growth, but Tyromyces palustris was able to grow in this culture without inhibition. Tyromyces palustris grew with the cicular halo type in copper containing culture, and this type was formed as collectives after examining by microscope, and considered as copper oxalates by analyzing FT-IR comparison experiment with standards. According to this result, Tyromyces palustris has secreted oxalic acid during incubation, this secreted oxalic acid was combined with coppers, and formed copper oxalates by chelating reactions. In other words, the oxalic acid was might be as non-toxifying agent of coppers in medium. By using this copper removal mechanisms, Tyromyces palustris immobilized sawdust was used in bench scale air lift system for removing coppers. The added coppers were almost removed from the system within 72hrs. Therefore, this nonenzymatic wood degradation mechanism may give a possibility for removing coppers from copper containing waste water.

• Carbon letters
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• 제18권
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• pp.49-55
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• 2016

Refuse-derived fuel (RDF) produced using municipal solid waste was pyrolyzed to produce RDF char. For the first time, the RDF char was used to remove aqueous copper, a representative heavy metal water pollutant. Activation of the RDF char using steam and KOH treatments was performed to change the specific surface area, pore volume, and the metal cation quantity of the char. N₂ sorption, Inductively Coupled Plasma-Atomic Emission Spectrometer (ICP-AES), and Fourier transform infrared spectroscopy were used to characterize the char. The optimum pH for copper removal was shown to be 5.5, and the steam-treated char displayed the best copper removal capability. Ion exchange between copper ions and alkali/alkaline metal cations was the most important mechanism of copper removal by RDF char, followed by adsorption on functional groups existing on the char surface. The copper adsorption behavior was represented well by a pseudo-second-order kinetics model and the Langmuir isotherm. The maximum copper removal capacity was determined to be 38.17 mg/g, which is larger than those of other low-cost char adsorbents reported previously.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.49-50
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• 2006

The studies on Cu CMP have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate the roles of slurry components in the formation of the uniformity in Cu CMP. All the results of in this study showed that the uniformity in Cu CMP could be controlled by the contents of slurry components.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.74-79
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• 2007

Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.

• Tribology and Lubricants
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• 제31권3호
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• pp.79-85
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• 2015

RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

• Journal of Biosystems Engineering
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• 제28권3호
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• pp.209-216
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• 2003

Red pepper calyx cutting devices using a impacting force by a rotational cutter were devised and tested to obtain the fundamental data for development of a calyx removal unit. Fresh red peppers with 80∼87%(w.b.) of initial moisture contents were used as experimental materials. Square and wire type of rotational cutters were used to cut the red pepper calyx and the fresh red peppers were fed into the device both manually and automatically. Three rotational speeds of 250, 500, 700rpm were selected for a square, and 1000, 1500, 1800rpm for a wire type cutter respectively. Four types of red pepper fixing unit were used in manual feeding. The cutting rate of the square type cutter was over 50% regardless the shape and specification of the cutter. For the wire type cutter, the copper wire and nylon chord could not be applied to cut the red pepper calyx because of the low cutting rate. But for the fine wire, the cutting rate was higher and the cutting mechanism was more steady than copper wire and nylon chord. The cutting rate of automatic feeding and wire type cutting unit was about 70% for all levels of the rotational speed. The cutting rate was highly related to the impacting point of red pepper in carrier box. To increase the cutting rate using the rotational cutter, a proper device and mechanism was required to keep the impacting point consistently.

• 한국의류학회지
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• 제20권4호
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• pp.655-666
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• 1996

The effect of protease (subtilisin Carlsberg) on the removal of hemoglobin as protein soil was studied. The relation between the renloval and the hydrolysis of hemoglobin by subtilisin Carlsberg was discussed. The soiled babric was prepared by spotting of hemoglobin solution evenly on the cotton fabric and was denatured by steaming. The soiled fabric was washed by using Terg-0-Tometer at various conditions. The removal efficiency was evaluated by analysis of protein on the fabrics before and after washing by means of copper-Folin method. 1. The removal of hemoglobin was increased in proportion to increasing of the enzyme concentration up to a certain point, but it began to decrease above the point. 2. The hemoglobin was removed effectively by adding of subtilisin Carlsberg, and more effectively removed by adding of AOS in the enzyme solution. 3. The removal of hemoglobin deviated from the first order reaction in detergency. 4. The renloval of hemoglobin was highest at $50^{\circ}C$ in detergency, Even at low temperature the removal efficiency of enzyme was relatively higher compared with the hydrolysis of hemoglobin by the enzyme. However the removal of hemoglobin was apparently decreased with the increase of temperature over $60^{\circ}C$. 5. The removal of hemoglobin was relatively high at pH 7.0~8.0 and increased continuously with the increase of pH in detergency 6. In detergency, the removal mechanism of hemoglobin by subtilisin Carlsberg could be explained as follows: Fisrt of all, the enzyme hydrolyzed hemoglobin substrates partially by forming E-S complex at the surface of hemoglobin on the cotton fiber, and decomposed cooperative binding of hemoglobin. Subsequently, the fragments of hemoglobin were easily removed by washing. According as the enzyme penetrated to inner part of hemoglobin gradually, the hemoglobin on the cotton fiber was effectively removed by the repetition of these process. The removal of hemoglobin was more effectively increased by adding both the enzyme and AOS in the washing solution. Therefore, it was regarded that AOS molecules were adsorbed at the hydrophobic surface of denatured hemoglobin, subsequently, decomposed more effectively cooperative binding of hemoglobin, and the fragments of hemoglobin were removed more efficiently by means of the interfacial reaction of AOS.