• Title/Summary/Keyword: copper foil

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Effect of KHCO3 Concentration Using CuO Nanowire for Electrochemical CO2 Reduction Reaction

  • Kanase, Rohini Subhash;Kang, Soon Hyung
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.11-17
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    • 2020
  • Copper has been proved to be the best catalyst for electrochemical CO2 reduction reaction, however, for optimal efficiency and selectivity, its performance requires improvements. Electrochemical CO2 reduction reaction (RR) using CuO nanowire electrode was performed with different concentrations of KHCO3 electrolyte (0.1 M, 0.5 M, and 1 M). Cu(OH)2 was formed on Cu foil, followed by thermal-treatment at 200℃ under the air atmosphere for 2 hrs to transform it to the crystalline phase of CuO. We evaluated the effects of different KHCO3 electrolyte concentrations on electrochemical CO2 reduction reaction (RR) using the CuO nanowire electrode. At a constant current (5mA), low concentrated bicarbonate exhibited a more negative potential -0.77 V vs. Reversible Hydrogen Electrode (RHE) (briefly abbreviated as VRHE), while the negative potential reduced to -0.33 VRHE in the high concentration of bicarbonate solution. Production of H2 and CH4 increased with an increased concentration of electrolyte (KHCO3). CH4 production efficiency was high at low negative potential whereas HCOOH was not influenced by bicarbonate concentration. Our study provides insights into efficient, economically viable, and sustainable methods of mitigating the harmful environmental effects of CO2 emission.

Trace impurity analysis of Cu films using GDMS: concentration change of impurities by applying negative substrate bias voltage (글로우방전 질량분석법을 이용한 구리 박막내의 미량불순물 분석: 음의 기판 바이어스에 의한 불순물원소의 농도변화)

  • Lim Jae-Won;Isshiki Minoru
    • Journal of the Korean Vacuum Society
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    • v.14 no.1
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    • pp.17-23
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    • 2005
  • Glow discharge mass spectrometry(GDMS) was used to determine the impurity concentrations of the deposited Cu films and the 6N Cu target. Cu films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V using a non-mass separated ion beam deposition method. Since do GDMS has a little difficulty to apply to thin films because of the accompanying non-conducting substrate, we have used an aluminum foil to cover the edge of the Cu film in order to make an electrical contact of the Cu film deposited on the non-conducting substrate. As a result, the Cu film deposited at the substrate bias voltage of -50 V showed lower impurity contents than the Cu film deposited without the substrate bias voltage although both the Cu films were contaminated during the deposition. It was found that the concentration change of each impurity in the Cu films by applying the negative substrate bias voltage is related to the difference in their ionization potentials. The purification effect by applying the negative substrate bias voltage might result from the following reasons: 1) Penning ionization and an ionization mechanism proposed in the present study, 2) difference in the kinetic energy of accelerated Cu+ ions toward the substrate with/without the negative substrate bias voltage.

Influence of Sputtering Conditions on Structural and Electrochemical Properties of the Si Anode Film for Lithium Secondary Batteries (리튬 이차전지에서 Si 음극박막의 스퍼터링 증착조건에 따르는 구조적, 전기화학적 특성 연구)

  • Joo, Seung-Hyun;Lee, Seong-Rae;Cho, Won-Il;Cho, Byung-Won
    • Korean Journal of Materials Research
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    • v.19 no.2
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    • pp.73-78
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    • 2009
  • This study investigated the dependence of the various sputtering conditions (Ar pressure: $2{\sim}10\;mTorr$, Power: $50{\sim}150\;W$) and thickness ($50{\sim}1200\;nm$) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

Measurements of the Adhesion Energy of CVD-grown Monolayer Graphene on Dielectric Substrates (단일층 CVD 그래핀과 유전체 사이의 접착에너지 측정)

  • Bong Hyun Seo;Yonas Tsegaye Megra;Ji Won Suk
    • Composites Research
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    • v.36 no.5
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    • pp.377-382
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    • 2023
  • To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m2 for silicon dioxide and 2.90 ± 0.08 J/m2 for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Synthesis of High-Quality Monolayer Graphene on Copper foil by Chemical Vapor Deposition

  • Lee, Su-Il;Kim, Yu-Seok;Song, U-Seok;Jo, Ju-Mi;Kim, Seong-Hwan;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.351-352
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    • 2011
  • 그래핀(Graphene)은 2차원 평면구조의 $sp^2$ 탄소 결합으로 이루어진 물질이다. 일반적으로 그래핀은 탄소 원자 한층 정도의 얇은 두께를 가지면서 강철의 100배 이상 높은 강도, 다이아몬드보다 2배 이상 뛰어난 열 전도성, 그리고 규소보다 100배 이상 빠른 전자이동도 등의 매우 우수한 특성을 지닌다. 그래핀을 합성하거나 얻는 방법에는, 기계적 박리법(Micro mechanical exfoliation), 산화흑연(graphite oxide)을 이용한 reduced graphene oxide(RGO)방법과 탄화 규소(SiC)를 이용한 epitaxial growth 방법 등이 있지만, 대 면적화가 어렵거나 구조적 결함이 큰 문제점이 있다. 반면, 탄화수소(hydrocarbon)를 탄소 공급원으로 하는 열화학 기상 증착법(Thermal chemical vapor deposition, TCVD)은 구조적 결함이 상대적으로 적으면서 대 면적화가 가능하다는 이점 때문에 최근 가장 많이 이용되고 있는 방법이다. TCVD를 이용, 니켈, 몰리브덴, 금, 코발트 등의 금속에서 그래핀 합성연구가 보고되었지만, 대부분 수 층(fewlayer)의 그래핀이 합성되었다. 하지만, 구리 촉매를 이용하는 것이 단층 그래핀 합성에 매우 효율적이라는 연구결과가 보고되었다. 구리의 경우, 낮은 탄소융해도(solubility of carbon) 때문에 표면에서 self limiting 과정을 통하여 단층 그래핀이 합성된다. 그러나 단층 그래핀 일지라도 면저항(sheet resistance)이 매우 높고, 이론적 계산값에 비해 전자이동도(electron mobility)가 낮게 측정된다. 이러한 원인은 구조적 결함에서 기인된 것으로써 산업으로의 응용을 어렵게 만들기 때문에 양질의 단층 그래핀 합성연구는 필수적이다[1,2]. 본 연구에서는 TCVD를 이용하여 구리 포일(25 ${\mu}m$, Alfa Aeser) 위에 메탄가스를 탄소공급원으로 하여 수소를 함께 주입하고, 메탄가스의 양과 합성시간, 열처리 시간을 조절하면서 균일한 단층 그래핀을 합성하였다. 합성된 그래핀을 $SiO_2$ (300 nm)기판위에 전사(transfer)후 라만 분광법(raman spectroscopy)과 광학 현미경(optical microscope)을 통하여 분석하였다. 그 결과, 열처리 시간이 증가할수록 촉매로 사용된 구리 포일의 grain size가 커짐을 확인하였으며, 구리 포일 위에 합성된 그래핀의 grain size는, 구리 포일의 grain size에 의존하여 커짐을 확인하였다. 또한 동일한 grain 내의 그래핀은 균일한 층으로 합성되었다. 이는 기계적 박리법, RGO 방법, epitaxial growth 방법으로 얻은 그래핀과 비교하여 매우 뛰어난 결정성을 지님이 확인되었다. 본 연구를 통하여 면적이 넓으면서도 결정성이 매우 뛰어난 양질의 단층 그래핀 합성 방법을 확립하였다.

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Micro fluxgate magnetic sensor using multi layer PCB process (PCB 다층 적층기술을 이용한 마이크로 플럭스게이트 자기 센서)

  • Choi, Won-Youl;Hwang, Jun-Sik;Choi, Sang-On
    • Journal of Sensor Science and Technology
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    • v.12 no.2
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    • pp.72-78
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    • 2003
  • To observe the effect of excitation coil pitch on the micro fluxgate magnetic sensor, two sensors are fabricated using multi layer board process and the pitch distance of excitation coil are $260\;{\mu}m$ and $520\;{\mu}m$, respectively. The fluxgate sensor consists of five PCB stack layers including one layer of magnetic core and four layers of excitation and pick-up coils. The center layer as magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ${\sim}100,000$ and has a rectangular-ring shape to minimize the magnetic flux leakage. Four outer layers as excitation and pick-up coils have a planar solenoid structure and are made of copper foil. In case of the fluxgate sensor having the excitation coil pitch of $260\;{\mu}m$, excellent linear response over the range of $-100\;{\mu}T$ to $+100\;{\mu}T$ is obtained with sensitivity of 780 V/T at excitation sine wave of $3V_{p_p}$ and 360 kHz. The chip size of the fabricated sensing element is $7.3\;{\times}\;5.7\;mm^2$. The very low power consumption of ${\sim}8\;mW$ is measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.

A Micro Fluxgate Magnetic Sensor with Closed Magnetic Path (폐자로를 형성한 마이크로 플럭스게이트 자기 센서)

  • 최원열;황준식;강명삼;최상언
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.3
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    • pp.19-23
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    • 2002
  • This paper presents a micro fluxgate magnetic sensor in printed circuit board (PCB). In order to observe the effect of the closed magnetic path, the magnetic cores of rectangular-ring and two bars were each fabricated. Each fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a Co-based amorphous magnetic ribbon with extremely high DC permeability of ~100,000. Four outer layers as an excitation and pick-up coils have a planar solenoid and are made of copper foil. In case of the fluxgate sensor having the rectangular-ring shaped core, excellent linear response over the range of -100 $\mu$T to + 100 $\mu$T is obtained with 540 V/Tsensitivity at excitation square wave of 3 $V_{p-p}$ and 360 KHz. The chip size of the fabricated sensing element is $7.3 \times 5.7\textrm{mm}^2$. The very low power consumption of ~8 mW was measured. This magnetic sensor is very useful for various applications such as: portable navigation systems, telematics, VR game and so on.n.

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Direct Growth of CNT on Cu Foils for Conductivity Enhancement and Their Field Emission Property Characterization (전도성 향상을 위한 구리호일 위 CNT의 직접성장 및 전계방출 특성 평가)

  • Kim, J.J.;Lim, S.T.;Kim, G.H.;Jeong, G.H.
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.155-163
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    • 2011
  • Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.

A Basic Study on Miniature Size Electrostatic Induction Meter (소형(小型) 정전(靜電) 유도형(誘導型) 모터의 기초(基礎) 연구(硏究))

  • Moon, Jae-Duk;Lee, Dong-Hoon
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.65-74
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    • 1993
  • A miniature size electrostatic induction motor has been fabricated and studied with emphasis on the role of the surface resistivity, the relative dielectric constant and the charge relaxation time constant of the rotor surface materials and the rotor liner materials, which, however, control the surface charge induction and relaxation on the rotor material surface and the field intensity between the rotor and the stator of the motor. It is found that the surface resistivity and/or the relative dielectric constant, and the charge relaxation time constant of the rotor surface material enfluenced significantly to motor speed controlled by the surface charge induction and relaxation on the rotor surface depending on the applied voltage and/or frequency changing. The resistivity of the rotor liner material is also found to be effected to the motor speed greatly by control of the field intensity between the rotor and the stator and of the surface charge distribution of the induced charge on the rotor. As a result, a maximum no load rotor speed of the motor tested was about 5500 rpm at the applied voltage of 4.5 kV and the frequency of 220 Hz for the case of the rotor surface material of $BaTiO_{3}$ 80% in the resin binder layered on the copper-foil rotor liner material.

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