• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.430-433
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• 2001

The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of $(Sr_{1-x}\cdot Ca_x)TiO_3(0.05{\leq}x{\leq}0.20)$-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1480\sim1500^{\circ}C$ and 4 hours. respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, ${\varepsilon}_r$ >50000, tan$\delta$ <0.05, ${\Delta}C$ < ${\pm}10%.$ The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.232-240
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• 1999

In this study, the $(1-\chi)Ba(Mg_{\fraction one-third}Ta_{\fraction two-thirds}O_3-\chiBa(Co_{\fraction one-third}\Nb_{\fraction two-thirds})O_3$ ceramics($\chi$=0.3,0.4,0.5,0.6) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500~1575^{\circ}C$ for5 hours in air. The BMT-BCN ceramics have a complex perovskite structure, and have peaks of (101), (102), (201), (202) and (212). Increasing the sintering temperature, dielectric constant was increased. Temperature coefficients of resonant frequency of the specimens were decreasing with increasing BCN content. In the case of the 0.7BMT-0.3BCN ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 28, 235500 at ㎓ and -$1.2 ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.538-542
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• 2005

The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional miked oxide method and the sintering temperature was $1425\~1500^{\circ}C$. The hexagonal phase of $Mg_4Ta_2O_9$ and the cubic phase of $SrTiO_3$ were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596 GHz and $-3.14\;ppm/^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1491-1493
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• 2002

The 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction patterns, major phases of the 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics were coexisted. Also the secondary phase of Mg$Ti_2O_5$, Ba$Mg_6Ti_6O_{19}$ and the unreacted $TiO_2$ phase were existed. In the case of 0.5$Ba_2Ti_9O_{20}$-0.5Mg$TiO_3$ ceramics sintered $1350^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 33.7, 54,900GHz, -12.5ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• Rapid Communication in Photoscience
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• v.4 no.3
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• pp.54-58
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• 2015

Under the condition of femtosecond impulsive nonlinear optical irradiation, the bright and narrowed blue emission of silicon nanocrystal was observed. This synthetic method produced very small (~ 4 nm) oxide-capped silicon nanocrystal having probably ultra small emitting core (~ 1 nm) inferred from luminescence. By controlling the stirring condition, very high efficiencies of luminescence ( 4 fold higher) were obtained compared with the other conventional femtosecond laser fragmentation methods, which was attributed to the differences in hydration shell structure during the femtosecond laser induced irreversible phase transition reaction. When we properly adjusted the irradiation times of the white light continuum and stirring condition, very homogeneous luminescent silicon nanocrystal bands having relatively sharp lineshape were obtained, which can be attributable to the luminescent core site isolated and free from the surface defects.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.37-42
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• 1996

ZnO films have been deposited on oxide grown Si wafers by the conventional thermal evaporation method. Anhydrous zinc acetate was directly heated and sublimed in the laboratory-made brass boat. The substrates temperature varied from $200^{\circ}C$ to $600^{\circ}C$. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. The films deposited at high oxygen pressure exhibited higher resistivity than films at low pressure. X-Ray Diffraction(XRD), Energy Dispersive Spectroscopy(EDS) and Rutherford Backscattering Spectrometry (RBS) were conducted on the films to reveal the crystallinity and composition of the ZnO films. The ZnO films deposited at high oxygen pressure were extremly sensitive to the humidity of higher than 70 % RH.