• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.151-154
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• 2003

The synthesis and luminescent properties of trivalent europium activated gadolinium oxide red phosphors by sol-gel process have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation as chelating agents. We noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for lhrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated at about $100^{\circ}C$ was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence properties of resultant $Gd_{2}O_{3}:Eu^{3+}$ phosphor was measured by SEM, FT-IT and brightness intensity was shown 20% higher than those prepared by conventional method and by other chelating agent.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.424-432
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• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.821-826
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• 2005

Gadolinia-doped ceria nanopowder was prepared by glycine-nitrate combustion method with different glycine/nitrate mixing ratio. The characteristics of the synthesized powder were investigated by X-ray diffraction method, transmission electron microscopy, thermal gravity, differential thermal analysis and thermo-mechanical analysis. The smallest powder was obtained with glycine/nitrate ratio 1.00 and the lowest organic and water vapor contained powder was made with glycine/nitrate ratio 1.75. According to dilatometry, fast densification was occurred around $1000^{\circ}C$ and shows full density over $1300^{\circ}C$. Finally near-fully dense ceria electrolyte was fabricated with conventional sintering technique. Glycine-nitrate process yields fine nanopowders which enable low temperature sintering and fabrication of fully dense and nanostructured oxide electrolyte.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2022-2024
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• 2005

Electrical double-layer capacitor (EDLC) is an electrochemical energy storage device in which electric charges only accumulated by a pure electrostatic attraction force are stored on the electrolyte-electrode interface in a form of double layer and separated by the electrolyte. The composite was prepared by mixing nanosize $TiO_2$ and activated carbon through a means of ultrasonic vibration in ethanol solution for 30 min in various mass ratios of $AC:TiO_2$ to form activated carbone-semiconducting oxide composites. Either 1.0 M $LiClO_4/EC-DEC$ or $Et_4NBF_4$/EC-DEC was used as the electrolyte. It was found that with modification of $TiO_2$, the specific capacitance of activated carbon measured at $1mA/cm^2$ was increased from 40 to 50 F/g. This method is unique in comparison the conventional method because it uses semiconducting TiO2 other than electrochemically active materials such as $RuO_2$. The increase in specific capacitance could be attributed to the decrease in electric polarization, caused by the introduction of $RuO_2$.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1738-1742
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• 2009

Nanocrystalline Zn$Fe_2O_4$ oxide-semiconductor with spinel structure was synthesized by the polymerized complex (PC) method and investigated for its photocatalytic and photoelectric properties. The observation of a highly pure phase and a lower crystallization temperature in Zn$Fe_2O_4$ made by PC method is in total contrast to that was observed in Zn$Fe_2O_4$ prepared by the conventional solid-state reaction (SSR) method. The band gap of the nanocrystalline Zn$Fe_2O_4$ determined by UV-DRS was 1.90 eV (653 nm). The photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method as investigated by the photo-decomposition of isopropyl alcohol (IPA) under visible light (${\geq}$ 420 nm) was much higher than that of the Zn$Fe_2O_4$ prepared by SSR as well as Ti$O_{2-x}N_x$. High photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method was mainly due to its surface area, crystallinity and the dispersity of platinum metal over Zn$Fe_2O_4$.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.33 no.1
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• pp.73-79
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• 2001

Stricter environmental demands have increased the need to replace conventional C/D bleaching sequence by chlorine-free sequence. Permanganate is well known as a powerful oxidant and have been used industrially in variable fields. However, it has considered to be difficult to use permanganate as a bleaching reagent because of its strong oxidative effect decreasing the viscosity of pulps extremely. We have tried to use permanganate as a bleaching reagent for KP under the mild condition and it was clear that pernanganate oxidized lignin remained in pulps selectively and increased pulp brightness decreasing K number of pulps with small degradation of cellulose. We have employed the neutral condition in the permanganate bleaching process in this study. In this case, permanganate was converted to manganese dioxide after bleaching reaction. The manganese dioxide is remained in the treated pulp fibers because of its insolublity in water. So it was required to reduction the manganese oxide to manganese ion by using reductants with acid. In this paper, we proposed to use oxalic acid as a reducing reagent converting manganese oxide to manganese ion after bleaching reaction. Oxalic acid plays the role as a reductant and a acid, so post-treatment after bleaching became to be easy by using oxalic acid. On the study using lignin model compounds, it was clear that permaganate react with phenols firstly, after that oxalic acid reduce the manganese oxide to manganese ion in the mixture of permanganate, phenols and oxalic acid. Several lignin model compounds ($\textit{p}$-hydroxybenzaldehyde, vanillin, syringaldehyde, veratraldehyde) are selected to elucidate the effect of substituents on reaction rate and its mechanism with permanganate including oxalic acid in this study. Except for veratraldehyde, the rate of oxidative degradation of phenolic compounds by permanganate with oxalic acid are higher than neutral condition. Especially, the degradation rate of $\textit{p}$-hydroxybenzaldehyde are strongly dependent on pH of reaction mixture. On the other hand, the degradation rate of veratraldehyde are decreased with decreasing pH and main degradation product is veratric acid. This result indicate that pH of bleaching liquor should be kept over 2 to degrade of non-phenolic lignin in the pulps effectively in permanganate bleaching.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.357-364
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• 2023

Selective catalytic reduction (SCR) is the most effective method for reducing nitrogen oxide emissions, but the operating temperature range of V₂O₅-WO₃/TiO₂ catalysts is narrow (300~400℃). In this study, a new catalyst with an operating temperature range of 200~450℃ was developed. The catalyst poison, ammonium bisulfate, generated during the SCR process can be removed by heating above 350℃. To increase the number of active sites and promote the dispersion of active materials, titanium isopropoxide (TTIP) treatment was performed on the TiO₂ support with various TTIP/TiO₂ mass ratios. Among them, the 5 wt% TTIP loaded catalyst showed improved performance due to higher thermal stability caused by high W dispersion and the formation of V⁵⁺. In addition, the 5 wt% TTIP-loaded catalyst prepared by a one-step co-precipitation method showed greater V-OH and W-OH dispersion and enhanced interactions in contrast to conventional methods, resulting in higher catalytic activity at lower temperatures. This review article aims to provide an accessible explanation for researchers investigating how to improve the surface properties of TiO2 catalysts using TTIP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.