• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2009년도 추계학술대회 논문집
• /
• pp.217-220
• /
• 2009

This paper presents fabrication method of nano-structured PMMA substrates as well as evaluations of their optical transmittance. For anti-reflective surface, surface coating method had been conventionally used. However, it requires high cost, complicated process and post-processing times. In this study, we suggested the fabrication method of anti-reflective surface by the hot embossing process. Using the nano patterned master fabricated by anodic aluminum oxidation process. Anodic aluminum oxide(AAO) is widely used as templates or a molds for various applications such as carbon nano tube (CNT), nano rod and nano dots. Anodic aluminum oxidation process provides highly ordered regular nano-structures on the large area, while conventional pattering methods such as E-beam and FIB can fabricate arbitrary nano-structures on small area. We fabricated a porous alumina hole array with various inter-pore distance and pore diameter. In order to replicate nano-structures using alumina nano hole array patterns, we have carried out hot-embossing process with PMMA substrates. Finally the nano-structured PMMA substrates were fabricated and their optical transmittances were measured in order to evaluate the charateristivs of anti-reflection. Anti-reflective structure can be applied to various displays and automobile components.

• 한국대기환경학회지
• /
• 제8권1호
• /
• pp.58-67
• /
• 1992

For removing $NO_x$ and $SO_x$ from the flue gases emitted from stationary sources, $V_2O_5-MoO_3/TiO_2$ catalysts were prepared by the conventional impregnation method (aqueous solution) and a sort of surface fixation method(nonaqueous solution) as reported excellent reproducibility catalysts. And these catalysts observed their catalytic activities as well as their surface properties. V-Mo-O oxide, prepared from nonaqueous solution of $VOCl_3$ and $Mo(CO)_6$ and aqeous solution method, was supported as amorphous state by XRD and SEM measurements. The infrared spectra of fresh and used catalysts showed that in used catalysts, V=O bands decreased and new bands of vanadium oxysulfate bands were very sensitive. So the catalysts prepared from nonaqueous solution may bring about the high activity. Results from catalytic activity measurements at 350$^\circ$C, in the presence of $SO_2, NO$ conversion was more increased than in absence of $SO_2$. As the $MoO_3$ was added to $V_2O_5/TiO_2 system, SO_2$ conversion increased. It found that from the results, $V_2O-5-MoO_3/TiO_2$ catalysts prepared from an nonaqueous solution may bring about the high activity for both the reaction of NO and $SO_2$ removal.

• 한국전기전자재료학회논문지
• /
• 제20권10호
• /
• pp.918-923
• /
• 2007

Fuel cell is a modular, high efficient and environmentally energy conversion device, it has become a promising option to replace the conventional fossil fuel based electric power plants. The high temperature fuel cell has conspicuous feature and high potential in being used as an energy converter of various fuel to electricity and heat. Corrosions in molten electrolytes and the electric conductivity across the oxide scale have crucial characteristics. When molten salts are involved, high temperature corrosions become severe. In this sense, corrosions of alloys with molten carbonates have the most severe material problems. Systematic investigation on corrosion behavior of Fe/21Cr/Ti or Al alloy has been done in (62+38)mol% (Li+K)$CO_3$ melt at $650^{\circ}C$ using the electrochemical impedance spectroscopy method. It was found that the corrosion current of these Fe-based alloys decreased with increasing Al or Ti. And Al addition improved the corrosion resistance of this type of specimen and more improvement of corrosion resistance was observed at the specimen added with Al.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.155-159
• /
• 2003

The preparation and luminescence characterization of yttrium oxide doped with trivalent europium phosphors by sol-gel method have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation one of appled various chelating agents. we noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for 1hrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence characterization of resultant $Y_{2}O_{3}:Eu^{3+}$ phosphor was enhanced upto maximum 30% significantly than conventional method through increasing porous region and decreasing particle sizes.

• Bulletin of the Korean Chemical Society
• /
• 제35권4호
• /
• pp.1082-1086
• /
• 2014

A multi-channel microchip electrophoresis (MCME) method with parallel laser-induced fluorescence (LIF) detection was developed for rapid screening of H1N1 virus. The hemagglutinin (HA) and nucleocapsid protein (NP) gene of H1N1 virus were amplified using polymerase chain reaction (PCR). The amplified PCR products of the H1N1 virus DNA (HA, 116 bp and NP, 195 bp) were simultaneously detected within 25 s in three parallel channels using an expanded laser beam and a charge-coupled device camera. The parallel separations were demonstrated using a sieving gel matrix of 0.3% poly(ethylene oxide) ($M_r$ = 8,000,000) in $1{\times}$ TBE buffer (pH 8.4) with a programmed step electric field strength (PSEFS). The method was ~20 times faster than conventional slab gel electrophoresis, without any loss of resolving power or reproducibility. The proposed MCME/PSEFS assay technique provides a simple and accurate method for fast high-throughput screening of infectious virus DNA molecules under 400 bp.

• 한국재료학회지
• /
• 제14권2호
• /
• pp.90-93
• /
• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• 대한치과보철학회지
• /
• 제43권5호
• /
• pp.599-610
• /
• 2005

Purpose: The success of the bonding between electroformed gold and ceramic is dependent on the surface treatment of the pure gold coping. The purpose of this study was to evaluate the bonding strength between the electroformed gold and ceramic with varying surface treatment. Materials and methods: A total of 32 disks,8 were using conventional ceramometal alloy, 24 were using electroforming technique as recommended by manufacturer, were prepared. 24 electroformed disks were divided 3 groups according to surface treatment, i.e. 50 microns aluminium oxide sandblasting(GES-Sand), gold bonder treatment(GES-Bond) and $Rocatec^{TM}$ system(GES-Rocatec). For control group of conventional alloy 50 microns aluminium oxide treatment was done(V-Supragold). Energy dispersive x-ray analysis and scanning electron microscope image were observed. Using universal testing machine, shear bond strength and bonding failure mode at metal-porcelain interface were measured. Results and Conclusion: The following conclusions were drawn: 1. In the energy dispersive x-ray analysis, the Au was main component in electroformed gold(99.9wt%). After surface treatment, a little amount of $Al_2O_3(2.4wt%)$ were found in GES-Sand, and $SiO_2(4wt%)$ in GES-Bond. In GES-Rocatec, however, a large amount of $SiO_2(17.4wt%)$ were found. 2. In the scanning electron microscopy, similar pattern of surface irregu larities were observed in V-Supragold and GES-Sand. In GES-Bond, surface irregularities were increased and globular ceramic particles were observed. In GES-Rocatec, a large amount of silica particles attached to metal surface with increased surface irregularities were observed. 3. The mean shear bond strength values(MPa) in order were $22.9{\pm}3.7(V-Supragold),\;22.1{\pm}3.8(GES-Bond),\;20.1{\pm}2.8(GES-Rocatec)\;and\;13.0{\pm}1.4(GES-Sand)$. There was no significant difference between V-Supragold, GES-Bond, and GES-Rocatec. (P>0.05) 4. Most bonding failures modes were adhesive type in GES-Sand. However, in V-Supragold, GES-Bond and GES-Rocatec, cohesive and combination failures were commonly observed. From the result, with proper surface treatment method electroformed gold may have enough strength compare to conventional ceramometal alloy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.160-160
• /
• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• 청정기술
• /
• 제10권4호
• /
• pp.195-201
• /
• 2004

기능성 고분자와 셀룰라아제가 화학적으로 결합된 수식 셀룰라아제를 이용하여 폐신문용지(Old Newsprint, ONP)의 탈묵공정에 적용하였다. 수식 셀룰라아제 중의 셀룰라아제는 섬유의 피브릴화(fibrillation)를 촉진시켜 잉크입자의 박리를 향상시켰으며, 수식 셀룰라아제 중의 수식 고분자가 탈묵공정에서 분리된 잉크입자를 부상제거하는 새로운 탈묵 공정이 완성되었다. 수식 셀룰라아제를 이용한 공정은 극소량의 수식 셀룰라아제의 사용으로 인장강도, 백감도(brightness), 백색도(whiteness)를 포함한 물리적 성질을 기존 탈묵공정에서의 그것보다 향상시켰다. 잉크와 섬유의 결합은 저장 기간이 증가함에 따라 더욱 강해지고, 기존의 방법으로는 잉크입자 제거가 어려운 반면, 수식 셀룰라아제를 이용한 공정은 잉크입자 제거에 매우 탁월한 효과를 나타내었고, 약 1년간의 보존 기간을 가진 폐신문용지의 탈묵 효과를 41% 향상시켰다. 또한 이 공정은 황변현상을 제거했으며, 섬유의 피브릴화를 촉진시켜 재생지의 물리적 성질인 인장강도와 내부결합도를 향상시켰다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.466-468
• /
• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.