• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.957-962
• /
• 2003

The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• Journal of the Korean Physical Society
• /
• v.73 no.9
• /
• pp.1279-1282
• /
• 2018

This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

• Resources Recycling
• /
• v.12 no.1
• /
• pp.18-24
• /
• 2003

Reusing of electroless Ni-Cu-B waste solution was investigated in the plating time, plating rate, solution composition and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 40% waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 6 times over than that of batch type. Plating time of 40% waste solution additive at continuous type took longer 2 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by deposited inferiority and larger decreased plating rate.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.3
• /
• pp.135-145
• /
• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.657-662
• /
• 2005

In this study, the deposition of micrometer-scale metallic interconnects on LCD glass for the repair of open-circuit type defects is investigated. Although there had been a few studies Since 1980 s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and $W(CO)_6$ was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 nm depending on laser power and scan speed while the width was controlled between $3\~50{\mu}$ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 $O\cdot{\mu}m$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Proceedings of the Korean Environmental Sciences Society Conference
• /
• 1997.10a
• /
• pp.1.1-32
• /
• 1997

Atmospheric monitoring capabilities were established in 1988 by the University of Florida at Duke forest, near Durham. NC: Cary forest, near Gainesville, FL: and Austin forest, near Nacogdoches, TX. Continuous (hourly averaged) measurements of air quality (ozone, nitrogen oxides and sulfur dioxide) and meteorological variables were made at these three low elevation (< 200 meters), rural locations in the southeastern U.S. for more than three years. During the same period at these sites wet and dry acid deposition samples were collected and analyzed on an event and weekly basis, respectively The monitoring locations were selected to determine actual atmospheric exposure indices for southern pine species in support of on-site surrogate exposure chamber studies conducted by Southern Commercial Forest Research Cooperative (SCFRC) investigators. Daily and quarterly averaged ozone maxima were higher (55 ppb) at the northernmost site in the network (Duke forest) in the second and third quarters (spring and summer seasons) and lower (35 ppb) in the first and fourth quarters (winter and fall seasons), when compared to ozone levels at the two southernmost sites (Cary and Austin forests). Seasonal ozone levels at the latter two sites were similar Nitrogen oxieds and sulfur dioxide levels were insignificant (< 5 ppb) most of the time at all sites, although soil emissions of NO at two sites were found to influence nighttime ozone concentrations. Typical maximum quarterly and annual aggregate ozone exposure indices were significantly higher at Duke forest (92.5/259 ppm-hr) than those values observed at the two southern sites (65.6/210 ppm-hr). Acid deposition (wet and dry) components concentrations and deposition fluxes observed at the Duke forest, NC piedmont site, were generally greater, dependent on site and season, than corresponding variables measured at either of the two southern coastal plain sites (Cary and Austin forests). Acid deposition variables observed at the latter two sites were remarkably similar, both qualitatively and quantitatively, although the sites were located 1300 km apart. A comparison of deposition fluxes of elemental nitrogen (NO3, NH4') and sulfur (5042-, SO3) components in wet and dry forms indicated that wet deposition accounts for approximately 70% of the total nitrogen and 73% of the total sulfur input on an annual equivalent basis at all sites.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.8 s.173
• /
• pp.165-173
• /
• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Korean Journal of Materials Research
• /
• v.23 no.12
• /
• pp.680-686
• /
• 2013

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

• Korean Journal of Materials Research
• /
• v.18 no.3
• /
• pp.148-152
• /
• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• Resources Recycling
• /
• v.10 no.2
• /
• pp.27-33
• /
• 2001

Reusing of electroless Ni-Cu-P waste solution was investigated in the plating time, plating rate, solution composion and deposit. Plating time of nickel-catalytic surface took longer than that of zincated-catalytic surface. Initial solution with 50f) waste solution additive at batch type was possible to reusing of waste solution. Plating time of initial solution at continuous type took longer 10 times over than that of batch type. Plating time of 50% waste solution additive at continuous type took longer 3.7 times over than that of batch type. Component change of nickel-copper for electroless deposition was greatly affected by depolited inferiority and larger decreased plating rate.