• Title/Summary/Keyword: contact resistivity

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Temperature Dependent Behavior of Thermal and Electrical Contacts during Resistance Spot Welding

  • Kim, E.
    • International Journal of Korean Welding Society
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    • v.2 no.1
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    • pp.1-10
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    • 2002
  • The thermal contact conductance at different temperatures and with different electrode forces and zinc coating morphology was measured by monitoring the infrared emissions from the one dimensionally simulated contact heat transfer experiments. The contact heat transfer coefficients were presented as a function of the harmonic mean temperature of the two contacting surfaces. Using these contact heat transfer coefficients and experimentally measured temperature profiles, the electrical contact resistivities both for the faying interface and electrode-workpiece interface were deduced from the numerical analyses of the one dimension simulation welding. It was found that the average value of the contact heat transfer coefficients for the material with zinc coating (coating weight from 0 g/$mm^2$to 100 g/$mm^2$) ranges from 0.05 W/$mm^2$$^{\circ}C$ to 2.0 W/$mm^2$$^{\circ}C$ in the temperature range above 5$0^{\circ}C$ harmonic mean temperature of the two contacting surfaces. The electrical contact resistivity deduced from the one dimension simulation welding and numerical analyses showed that the ratio of electrical contact resistivity at the laying interface to the electrical contact resistivity at the electrode interface is smaller than one far both bare steel and zinc coated steel.

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Physical and Electrical Properties of Nanocrystalline Carbon Films Prepared with Ti Concentration for Contact Strip Application of Electric Railway (전기철도 집전판 응용을 위한 Ti 나노금속 함량에 따른 나노결정 탄소박막의 물리적, 전기적 특성)

  • Park, Yong-Seob;Jung, Ho-Sung;Park, Chul-Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.10
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    • pp.1561-1564
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    • 2012
  • In this work, we have fabricated the nanocrystalline carbon films by using unbalanced magnetron sputtering method with graphite and Ti targets for contact strip application of electrical railway. The power density of graphite target was fixed and the power density was increased for the increase of Ti concentration in TiC films. We investigated the hardness, surface roughness, contact angle, resistivity, HRTEM and XPS of TiC films with Ti concentration. The hardness and resistivity were improved with increasing Ti concentration. These results indicate that the improvement of hardness and resistivity is related to the increase of sp2 clusters in TiC films.

Surface Characteristics of Silicone Rubber Processes by Corona Discharges (코로나 방전에 따른 실리콘 고무의 표면 특성)

  • 한동희;조한구;강동필;민경은
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.133-140
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    • 2002
  • This paper aims to investigate the effect of silicone oils as processing agent affecting the loss and recovery of hydrophobicity. The recovery of hydrophobicity was evaluated by the measurement of the surface electrical resistivity and the contact angle on the SIR surface. Two kinds of silicone oils (1 and 2) having different molecular weight were selected under a consideration of hydrophobicity and processability. SIR specimens were exposed to corona discharges in air and the specimens were analyzed with contact angle and surface resistance measurements. It was observed that the contact angle and the surface resistivity of SIR increase gradually with testing time. The fast recovery of hydrophobicity of SIR, expressed by the increment of contact angle and surface resistivity, was showed in SIR2 containing silicone oil 2.

Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer (고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소)

  • 곽준섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

Evaluation of the ohmic contact resistivity in Plasma display panels

  • Yang, Seung-Hee;Moon, Cheol-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.882-885
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    • 2006
  • The contact resistivity of the black interlayer which has been introduced between BUS and ITO electrodes in a plasma display panel was evaluated using two kinds of specially designed test electrode patterns. Of the two, type 2 pattern was able to evaluate the contact resistivity more successfully, which was calculated as about $250{\Omega}$ in the suggested test pattern structure.

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스크린 프린팅 태양전지의 후면에 적용되기 위한 Al 특성 분석에 관한 연구

  • Lee, Jae-Du;Kim, Min-Jeong;Lee, Su-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.272-272
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    • 2009
  • Screen-printing metal contact is typically applied to the solar cells for mass production. And metal paste is used widely for rear contact formation of silicon solar cells. However, Screen-printing solar cell metal paste contact has low aspect ratio, low accuracy, high resistivity, hard control of unclean process. In this paper is to develop resistivity of rear contact for silicon solar cells applications. 4-point prove result, This resistivity of rear contact by Al evaporation was measured about $3.56{\times}10^6{\Omega}{\cdot}cm$ less than screen printed solar cell about $52.6{\times}10^6{\Omega}{\cdot}cm$.

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The Ohmic Contact of n-GaAs Using by Liquid Metal Ion Source (액체금속이온원을 이용한 n형 GaAs의 오옴성 접촉)

  • 강태원;이정주;김송강;홍치유;임재영;강승언
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.12
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    • pp.1995-2000
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    • 1989
  • The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

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3차원 소자를 위한 개선된 소오스/드레인 접촉기술

  • An, Si-Hyeon;Gong, Dae-Yeong;Park, Seung-Man;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.248-248
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    • 2010
  • CMOS 축소화가 32nm node를 넘어서 지속적으로 진행되기 위하여 FinFET, Surround Gate and Tri-Gate와 같은 Fully Depleted 3-Dimensional 소자들이 SCE를 다루기 위해서 많이 제안되어 왔다. 하지만 소자의 축소화를 진행함에 있어서 좁고 균일한 patterning을 형성하는 것과 동시에 낮은 Extension Region과 Contact Region에서의 Series Resistance을 제공하여야 하고 Source/Drain Contact Formation을 확보하여야 한다. 그리고 소자의 축소화가 진행됨으로써 Silicide의 응집현상과 Source/Drain Junction의 누설전류에 대한 허용범위가 점점 엄격해지고 있다. ITRS 2005에 따르면 32nm CMOS에서는 Contact Resistivity가 대략 $2{\times}10-8{\Omega}cm2$이 요구되고 있다. 또한 Three Dimensional 소자에서는 Fin Corner Effect가 Channel Region뿐만 아니라 S/D Region에서도 중대한 영향을 미치게 된다. 따라서 본 논문에서 제시하는 Novel S/D Contact Formation 기술을 이용하여 Self-Aligned Dual/Single Metal Contact을 이루어Patterning에 대한 문제점 해결과 축소화에 따라 증가하는 Contact Resistivity 문제점을 해결책을 제시하고자 한다. 이를 검증하기3D MOSFET제작하고 본 기술을 적용하고 검증한다. 또한 Normal Doping 구조를 가진3D MOSFET뿐만 아니라 SCE를 해결하기 위해서 대안으로 제시되고 있는 SB-MOSFET을 3D 구조로 제작하고, 이 기술을 적용하여 검증한다. 그리고 Silvaco simulation tool을 이용하여 S/D에 Metal이 Contact을 이루는 구조가 Double type과 Triple type에 따라 Contact Resistivity에 미치는 영향을 미리 확인하였고 이를 실험으로 검증하여 소자의 축소화에 따라 대두되는 문제점들의 해결책을 제시하고자 한다.

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Ohmic contact formation of polycrystalline 3C-SiC for high-temperature MEMS applications (초고온 MEMS용 다결정 3C-SiC의 Ohmic Contact 형성)

  • Ohn, Chang-Min;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.406-407
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    • 2006
  • This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

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Characteristics of Contact resistivity on RTP annealing temperature and time after Plasma ion implant (플라즈마 이온주입 후 RTP 열처리 온도와 시간에 따른 접촉저항 특성)

  • Choi, Jang-Hun;Do, Seung-Woo;Lee, Yong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.5-6
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    • 2009
  • In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

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