• Title/Summary/Keyword: contact reduction

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A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer

  • Kim, Jeyoung;Li, Meng;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.210-214
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    • 2016
  • In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

Reduction of metal-graphene contact resistance by direct growth of graphene over metal

  • Hong, Seul Ki;Song, Seung Min;Sul, Onejae;Cho, Byung Jin
    • Carbon letters
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    • v.14 no.3
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    • pp.171-174
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    • 2013
  • The high quality contact between graphene and the metal electrode is a crucial factor in achieving the high performance of graphene transistors. However, there is not sufficient research about contact resistance reduction methods to improve the junction of metal-graphene. In this paper, we propose a new method to decrease the contact resistance between graphene and metal using directly grown graphene over a metal surface. The study found that the grown graphene over copper, as an intermediate layer between the copper and the transferred graphene, reduces contact resistance, and that the adhesion strength between graphene and metal becomes stronger. The results confirmed the contact resistance of the metal-graphene of the proposed structure is nearly half that of the conventional contact structure.

Analysis of the Reduction Gear in Electric Agricultural Vehicle

  • Choi, Won-Sik;Kwon, Soon-Goo
    • Journal of the Korean Society of Industry Convergence
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    • v.21 no.4
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    • pp.159-165
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    • 2018
  • In electric agricultural machine a reduction gear is needed to convert the high speed rotation motion generated by DC motor to lower speed rotation motion used by the vehicle. The reduction gear consists of several spur gears. Spur gears are the most easily visualized gears that transmit motion between two parallel shafts and easy to produce. The modelling and simulation of spur gears in DC motor reduction gear is important to predict the actual motion behaviour. A pair of spur gear tooth in action is generally subjected to two types of cyclic stress: contact stress and bending stress. The stress may not attain their maximum values at the same point of contact fatigue. These types of failure can be minimized by analysis of the problem during the design stage and creating proper tooth surface profile with proper manufacturing methods. To improve its life expectation in this study modal and stress analysis of reduction gear is simulated using ANSYS workbench based on finite element method (FEM). The modal analysis was done to understand reduction gear deformation behaviour when vibration occurs. FEM static stress analysis is also simulated on reduction gear to simulate the gear teeth bending stress and contact stress behaviour.

Elliptical EHL Contacts under Dynamic Loading Conditions in HERB Drive

  • Jang, Si-Youl;Park, Kyoung-Kuhn;Kim, Wan-Doo;Moon, Ho-Jee
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.89-90
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    • 2002
  • Ball reducer (HERB Drive: High Efficient Wave Rolling Ball Drive) with waved grooves has many advantages over other types of reducers for high-reduction ratio, low noise and low energy loss, etc. The mechanism of force transmission is very similar to that of cam and follower in automobile valve train system especially in contact behaviors. In this study, we have investigated the traces of contact between ball and outer ring, and the dynamic contact behaviors of elastohydodynamic lubrication(EHL) with a certain reduction ratio. In order to verify the contact behaviors between ball and outer ring for the critical endurance lift, the contact velocity and load are computed for a cycle. During some intervals of a cycle, the contact velocity reverses its direction very suddenly. It is expected that changing the contact direction causes undesirable endurance performance because EHL film frequently col lapse at the moment of velocity reversal. From the computational investigation in this work, we hope to predict similar contact damages in other machinery due to this kind of contact behaviors, which is very typical in many contact phenomena.

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A Study on the Reduction the Thermal Contact Resistances at the Interface Between a Porous Metal Wick and Solid Heating Plate for a Circular Plate LHP (원판형 LHP 증발부의 소결 금속 윅에서의 접촉 저항에 관한 연구)

  • Jo, Jung-Rae;Choi, Jee-Hoon;Sung, Byung-Ho;Ki, Jae-Hyung;Ryoo, Seong-Ryoul;Kim, Chul-Ju
    • Proceedings of the KSME Conference
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    • 2008.11b
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    • pp.2357-2362
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    • 2008
  • LHP is different from a conventional heat pipes in design and heat and fluid flow passages. The situations of the former is much complex than the latter. In LHPs, evaporation occurs at the contact interface between the heating plate and the porous wick, so some micro channels machined at the contact interface serve to let the vapor flow out of the evaporator. This complexity of contact geometry was known to cause a high resistance to heat flow. The present work was to study the problem of heat passage across the contact surface for LHPs and determine those values contact resistance. For two cases of contact structures, the thermal contact resistances were examined experimentally, one being obtained through mechanical contact under pressure and the other through sintered bonding. Nickel powder wick and copper plate were used for specimens. The result showed that a substantial reduction of contact resistance of an order of degree could be obtainable by sintered bonding.

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Lubrication of Contact Area in Ball Reducer with Waved Grooves (파형 구름볼 감속기의 접촉점에서의 윤활특성 해석)

  • Jang, Si-Youl;Park, Kyoung-Kuhn;Kim, Wan-Doo
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.05a
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    • pp.143-149
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    • 2002
  • Ball reducer with waved grooves has many advantages over other reducers for the high-reduction ratios, low noise and low energy loss, etc. The mechanism of force transmission is very similar to that of cam and follower in automobile valve train system especially in the contact geometry. In this study, we have investigated the traces of contact between ball and outer race and the working behaviors with a certain reduction ratio. In order to verify the contact behaviors between ball and outer race, which determines the critical endurance life the contact velocity and load are computed for a cycle. During some period of a cycle, the contact velocity reverses its direction very suddenly, which causes undesirable endurance performance of this machinery. From the computational investigation in this work, we hope to predict similar contact damages in other machinery due to this kind of contact behaviors, which is very common in many contact phenomena.

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Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer (고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소)

  • 곽준섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

Critical Shoulder Height of Raceway in Ball Bearing Considering Elastohydrodynamic Lubrication

  • Kim, Kyeongsoo;Kim, Taewan
    • Tribology and Lubricants
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    • v.38 no.6
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    • pp.281-286
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    • 2022
  • In this study, the effects of Elasto-hydrodynamic lubrication pressure on the critical shoulder height of raceway in an angular contact ball bearing were investigated. Both 3D contact analyses using an influence function and the EHL analysis were conducted for the contact geometry between the ball and raceways. The pressure distributions by 3D contact analysis and EHL analysis for an example bearing were compared. The effect of ellipse truncation on the minimum film thickness also investigated from EHL analysis. The critical shoulder height in the dry contact and the EHL state were compared for various applied loads. It is shown that when the ellipse truncation occurs, the pressure spike for the EHL conjunction is higher than that for the dry contact, and its location moves more inward of the contact center. The steep pressure gradients would increase the flow rate, so in order to maintain flow continuity a significant reduction in film thickness and an abrupt rise in pressure occurs in the edge of shoulder. Significant reduction of the minimum film thickness occurs near the edge of shoulder. The critical shoulder heights in the EHL state are calculated as higher values compared with in the dry contact. This results shows that the determination of critical shoulder height by the EHL analysis is more proper.

A Study on Specific Contact Resistance Reduction of Ni Germanide/P-type Ge Using Terbium Interlayer (Terbium 중간층 적용을 통한 Ni Germanide/P-type Ge의 비접촉저항 감소 연구)

  • Shin, Geon-Ho;Li, Meng;Lee, Jeongchan;Song, Hyeong-Sub;Kim, So-Yeong;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.1
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    • pp.6-10
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    • 2018
  • Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

Finite Element Analysis of Adhesive Contact of Torus-Shaped Bumps (토러스형 돌기의 흡착접촉 유한요소해석)

  • 조성산;양승민
    • Tribology and Lubricants
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    • v.18 no.4
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    • pp.249-254
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    • 2002
  • Adhesive contact characteristics of torus-shaped bumps were analyzed using the finite element technique considering the adhesive force. Analyses focused on the effect of rim and bump radii on the adhesive contact behavior such as the jump-to-contact behavior, adhesion hysteresis, pull-off forces, contact region and pressure, and surface and subsurface stresses. Analysis results in the absence of adhesive force were also included to examine the effect of adhesive force. The applicability of torus-shaped bumps to the MEMS structure for reduction of friction is discussed.