• Computers and Concrete
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• 제27권3호
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• pp.199-210
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• 2021

The aim of this paper was to examine the continuous and discontinuous contact problems between the functionally graded (FG) layer pressed with a uniformly distributed load and homogeneous half plane using an analytical method and FEM. The FG layer is made of non-homogeneous material with an isotropic stress-strain law with exponentially varying properties. It is assumed that the contact at the FG layer-half plane interface is frictionless, and only the normal tractions can be transmitted along the contacted regions. The body force of the FG layer is considered in the study. The FG layer was positioned on the homogeneous half plane without any bonds. Thus, if the external load was smaller than a certain critical value, the contact between the FG layer and half plane would be continuous. However, when the external load exceeded the critical value, there was a separation between the FG layer and half plane on the finite region, as discontinuous contact. Therefore, there have been some steps taken in this study. Firstly, an analytical solution for continuous and discontinuous contact cases of the problem has been realized using the theory of elasticity and Fourier integral transform techniques. Then, the problem modeled and two-dimensional analysis was carried out by using ANSYS package program based on FEM. Numerical results for initial separation distance and contact stress distributions between the FG layer and homogeneous half plane for continuous contact case; the start and end points of separation and contact stress distributions between the FG layer and homogeneous half plane for discontinuous contact case were provided for various dimensionless quantities including material inhomogeneity, distributed load width, the shear module ratio and load factor for both methods. The results obtained using FEM were compared with the results found using analytical formulation. It was found that the results obtained from analytical formulation were in perfect agreement with the FEM study.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• Tribology and Lubricants
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• 제35권1호
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• pp.16-23
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• 2019

In this study, we aim to analyze the effects of both contact layer properties and surface roughness on contact resistance. The contact has a great influence on performance in terms of electrical conduction and heat transfer. The two biggest factors determining contact resistance are the presence of surface roughness and the surface layer. For this reason we calculated the contact resistance by considering both factors simultaneously. The model of this study to calculate contact resistance is as follows. First, the three representative surface parameters for the GW model are obtained by Nayak's random process. Then, the apparent contact area, real contact area, and contact number of asperities are calculated using the GW model with the surface parameters. The contact resistance of a single surface layer is calculated using Mikic's constriction equation. The total contact resistance is approximated by the parallel connection between the same asperity contact resistances. The results of this study are as follows. The appropriate thickness with reduction effect for contact resistance is determined according to the difference in conductivity between the base layer and surface layer. It was confirmed that the standard deviation of surface roughness has the greatest influence on surface roughness parameters. The results of this study will be useful for selecting the surface material and surface roughness when the design considering the contact resistance is needed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.154-155
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• 2007

PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material and presented the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. In this letter, we expect the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode to decrease writing current.

• 한국가시화정보학회지
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• 제19권3호
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• pp.54-62
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• 2021

This study has investigated the 3-D deflection characteristics of a flexible plate levitated by non-contact grippers using SPIV method. The measuring instrument consisted of a flexible plate located under four non-contact grippers and two cameras at the bottom of a transparent acrylic plate. Measurements were made on two materials (PVC and PC) for the plate with 50×50 cm2 area and 1 mm thickness. The deflection characteristics and flatness vary depending on the plate material, the gripper position and the air flow supplied to the gripper. For the material of PVC, the overall defection is convex. As the gripper position goes outward from the plate center, the upmost bending point also moves to the outside of the plate with the flatness increasing. However, the air flow rate does not affect the deflection pattern except for the small increase of flatness. For the material of PC, the shape of deflection changes from convex to concave as the gripper position goes out. The flatness is the highest at the point of transition from convex to concave, but the air flowrate has little effect on the flatness.

• 대한치과보철학회지
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• 제8권1호
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• pp.37-41
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• 1968

The purpose of this paper is to evaluate the number of occlusal contacts in centric occlusion. The 50 strictly selected subjects, who have good natural dentition and occlusion, were impressioned with Alginate Impression material, and dental stone models were madel. After transfering the models from mouth to Hanau Articulator Model H2 by means of SM type Face-Bow, condylar guidances were registered, red articulating papers($13{\mu}$ in thickness) were inserted between upper and lower posterior teeth, and the red marked points and lines were counted as occlusal contact points. 1. The number of occlusal contact points in centric occlusion were 1st Molars 2nd Molars, 2nd Premolars and 1st Premolars in order. 2. The number of occlusal contact points of right side showed comparatively much more than those of left side. 3. The number of occlusal contact points of upper in Premolar area were much more than those of lower, and in Molar area were the reverse. 4. The total number of occlusal contact points in centric occlusion were approximately 105 points.

• 로봇학회논문지
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• 제10권4호
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• pp.200-212
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• 2015

In classical dynamics, the coefficient of restitution is one of variables to estimate the amount of impulse. In general, we have considered the coefficient of restitution as a constant value. However, coefficient of restitution (COR) is the function of contact material and colliding velocity. Furthermore, COR is also a function of contact area. Thus, without considering the variable characteristic of COR, the actual motion of an object just after impact is not the same as we expect. A general COR model is proposed in this work and its effectiveness is verified through a cart impact experiment and its result is applied to simulation of a ball impact problem. A three-degree-of-freedom manipulator is employed as a test-bed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.282-282
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• 2011

Low power consuming operation of phase-change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Ge2Sb2Te5 (GST) is one of the best materials for the phase change random access memory (PRAM) because the GST has two stable states, namely, high and low resistance values, which correspond to the amorphous and crystalline phases of GST, respectively. However, achieving the fast operation speed at lower current requires an alternative chalcogenide material to replace the GST and shrinking the dimension of programmable volume. In this paper, we have fabricated nanoscale contact area on Ge2Sb2Te5 thin films with trimming process. The GST material was fabricated by melt quenching method and the GST thin films were deposited with thickness of 100 nm by the electron beam evaporation system. As a result, the reset current can be safely scaled down by reducing the device contact area and we could confirmed the phase-change characteristics by applying voltage pulses.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.313-320
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.