• Title/Summary/Keyword: contact length

Search Result 752, Processing Time 0.028 seconds

In situ dental implant installation after decontamination in a previously peri-implant diseased site: a pilot study

  • Kim, Young-Taek;Cha, Jae-Kook;Park, Jung-Chul;Jung, Ui-Won;Kim, Chang-Sung;Cho, Kyoo-Sung;Choi, Seong-Ho
    • Journal of Periodontal and Implant Science
    • /
    • v.42 no.1
    • /
    • pp.13-19
    • /
    • 2012
  • Purpose: The aim of this study was to examine whether a previous peri-implantitis site can affect osseointegration, by comparing implant placement at a site where peri-implantitis was present and at a normal bone site. A second aim of this study was to identify the tissue and bone reaction after treating the contaminated implant surface to determine the optimal treatment for peri-implant diseases. Methods: A peri-implant mucositis model for dogs was prepared to determine the optimal treatment option for peri-implant mucositis or peri-implantitis. The implants were inserted partially to a length of 6 mm. The upper 4 mm part of the dental implants was exposed to the oral environment. Simple exposure for 2 weeks contaminated the implant surface. After 2 weeks, the implants were divided into three groups: untreated, swabbed with saline, and swabbed with $H_2O_2$. Three implants from each group were placed to the full length in the same spot. The other three implants were placed fully into newly prepared bone. After eight weeks of healing, the animals were sacrificed. Ground sections, representing the mid-buccal-lingual plane, were prepared for histological analysis. The analysis was evaluated clinically and histometrically. Results: The untreated implants and $H_2O_2$-swabbed implants showed gingival inflammation. Only the saline-swabbed implant group showed re-osseointegration and no gingival inflammation. There was no difference in regeneration height or bone-to-implant contact between in situ implant placement and implant placement in the new bone site. Conclusions: It can be concluded that cleaning with saline may be effective in implant decontamination. After implant surface decontamination, implant installation in a previous peri-implant diseased site may not interfere with osseointegration.

Mosaic disease of black locust(Robinia pseudoacacia L.) I. Symptom and transmission by grafting (아까시나무모자이크병에 관한 연구 I. 병징 및 접목전염)

  • Kim Chong Jin
    • Korean journal of applied entomology
    • /
    • v.3
    • /
    • pp.1-5
    • /
    • 1964
  • Symptom of the mosaic disease of black locust which is presently widespread in Korea was observed and transmission of the disease was investigated by means of grafting Since its symptom was typically mosaic and its transmission was easily accomplished, the disease was considered to be caused by a virus. In investigation of transmission by grafting, it was found out that the discase was easily transmitted in both of the following cases, i. e., healthy seedlings grafted with diseased scions and diseased roots with healthy scions. In the healthy seedlings plus diseased scions grafting, some grafted seedlings were purposedly deprived of the diseased scions after, a certain length of time(10∼30 days), while some were left grafted. The former case showed much higher transmission rate than the latter case, but no fluctuation in rate of transmission by the length of contact period(10-30 days) was recognized. And even when the union between stock and diseased scion by callusing was not successful, the transmission was withnesed. On the basis of the symptom, transmission by grafting, and possibility of transmission by sap inoculation(not published yet), it is supposed that the mosaic virus belongs to the group of the black locust mosaic virus that has been reported in southeastern Europe by Atanasoff(1935) and Milinko et al(1961). It is very likely that the witches' broom of black locust recorded by Myung-O Kim et al(1961) in Korea is the mosaic disease.

  • PDF

Study of dynamic mechanical behavior of aluminum 7075-T6 with respect to diameters and L/D ratios using Split Hopkinson Pressure Bar (SHPB)

  • Kim, Eunhye;Changani, Hossein
    • Structural Engineering and Mechanics
    • /
    • v.55 no.4
    • /
    • pp.857-869
    • /
    • 2015
  • The aluminum 7075-T6 is known as an alloy widely used in aircraft structural applications, which does not exhibit strain rate sensitivity during dynamic compressive tests. Despite mechanical importance of the material, there is not enough attention to determine appropriate sample dimensions such as a sample diameter relative to the device bar diameter and sample length to diameter (L/D) ratio for dynamic tests and how these two parameters can change mechanical behaviors of the sample under dynamic loading condition. In this study, various samples which have different diameters of 31.8, 25.4, 15.9, and 9.5 mm and sample L/D ratios of 2.0, 1.5, 1.0, 0.5, and 0.25 were tested using Split Hopkinson Pressure Bar (SHPB), as this testing device is proper to characterize mechanical behaviors of solid materials at high strain rates. The mechanical behavior of this alloy was examined under ${\sim}200-5,500s^{-1}$ dynamic strain rate. Aluminum samples of 2.0, 1.5 and 1.0 of L/D ratios were well fitted into the stress-strain curve, Madison and Green's diagram, regardless of the sample diameters. Also, the 0.5 and 0.25 L/D ratio samples having the diameter of 31.8 and 25.4 mm followed the stress-strain curve. As results, larger samples (31.8 and 25.4 mm) in diameters followed the stress-strain curve regardless of the L/D ratios, whereas the 0.5 and 0.25 L/D ratios of small diameter sample (15.9 and 9.5 mm) did not follow the stress-strain diagram but significantly deviate from the diagram. Our results indicate that the L/D ratio is important determinant in stress-strain responses under the SHPB test when the sample diameter is small relative to the test bar diameter (31.8 mm), but when sample diameter is close to the bar diameter, L/D ratio does not significantly affect the stress-strain responses. This suggests that the areal mismatch (non-contact area of the testing bar) between the sample and the bar can misrepresent mechanical behaviors of the aluminum 7075-T6 at the dynamic loading condition.

Photocatalytic Properties of TiO2 Thin Films Prepared by RF Sputtering (RF Sputtering법으로 제조된 TiO2 박막의 광촉매 특성)

  • Jeong, Min-ho;Jin, Duk-yong;Hayashi, Y.;Choi, Dae-kue
    • Korean Journal of Materials Research
    • /
    • v.13 no.3
    • /
    • pp.185-190
    • /
    • 2003
  • Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

Guidelines for Dental clinicians in case of medically compromised Patients: Case reports of medically compromised patients taking oral Bisphosphonate (전신질환자 구강외과 소수술시의 주의사항 -골다공증약 복용환자 수술 포함-)

  • Kim, Sun-Jong;Kim, Myung-Rae
    • The Journal of the Korean dental association
    • /
    • v.48 no.7
    • /
    • pp.538-546
    • /
    • 2010
  • Dental surgical procedures are potentially stress-inducing to not only patients but clinicians especially in case of medically compromised patients. The body response to dental stress involves the cardiovascular, respiratory and the endocrine system. To minimize the stress to the medically compromised patients, the stress reduction protocols should be established. The protocols include (1) Recognize the patient's degree of medical risk (2) Medical consultation before dental therapy (3) Schedule the patient's appointment in the morning (4) Monitor and record preoperative, perioperative and postoperative vital signs (5) Intra-venous sedation during surgical procedures (6) Adequate pain control during therapy (7) Short length of appointment time (8) Contact the patients on the same day. Two cases of Bisphosphonate-related osteonecrosis of the jaws were analyzed. There were 2 women, and the mean age was 70 years (range, 64~74 years). both are medically compromised, with steroids. Both patients were taking an oral bisphosphonate for several years. BRONJ is defined as an area of exposed bone of more than 8 weeks - duration in a patient taking a bisphosphonate for bone disease. Bisphosphonates have been widely prescribed over the last decade for a range of bone diseases, mainly intravenously for bone cancers and orally for osteoporosis. Although it is still controversial as to precisely how the bisphosphonates work, generally it is accepted that they prevent osteoclast action, with consequent cessation of osteoblast activity, so that the bone turnover is markedly reduced or ceased. The aim of this study is to informed the clinicians how to prepare and recognize in case of the BRONJ with medically compromised patients.

The Effects of Corner Transistors in STI-isolated SOI MOSFETs

  • Cho, Seong-Jae;Kim, Tae-Hun;Park, Il-Han;Jeong, Yong-Sang;Lee, Jong-Duk;Shin, Hyung-Cheol;Park, Byung-Gook
    • Proceedings of the IEEK Conference
    • /
    • 2005.11a
    • /
    • pp.615-618
    • /
    • 2005
  • In this work, the effects of corner transistors in SOI MOSFETs were investigated. We fabricated SOI MOSFETs with various widths and a fixed length and characterized them. The SOI thickness was $4000{\AA}$ and the buried oxide(BOX) thickness was $4000{\AA}$. The isolation of active region was simply done by silicon etching and TEOS sidewall formation. Several undesirable characteristics have been reported for LOCOS isolation in fabrication on SOI wafers so far. Although we used an STI-like process instead of LOCOS, there were still a couple of abnormal phenomena such as kinks and double humps in drain current. Above all, we investigated the location of the parasitic transistors and found that they were at the corners of the SOI in width direction by high-resolution SEM inspection. It turned out that their characteristics are strongly dependent on the channel width. We made a contact pad through which we can control the body potential and figured out the dependency of operation on the body potential. The double humps became more prominent as the body bias went more negative until the full depletion of the channel where the threshold voltage shift did not occur any more. Through these works, we could get insights on the process that can reduce the effects of corner transistors in SOI MOSFETs, and several possible solutions are suggested at the end.

  • PDF

Performance Assessment of High-Speed Transponder System for Rail Transport on High-Speed Line (철도교통용 고속 트랜스폰더시스템 고속선 실차 성능평가)

  • Park, Sungsoo;Lee, Jae-Ho;Kim, Seong Jin
    • Journal of the Korean Society for Railway
    • /
    • v.19 no.3
    • /
    • pp.304-313
    • /
    • 2016
  • It is necessary to receive telegrams transmitted by transponder tags installed along the track in order to detect the exact position of a high-speed train. In a high-speed railway environment, telegrams can be corrupted by the electromagnetic interference that comes from onboard electric train power equipment or wayside devices. In this study, we verified the railway environment compatibility of a high-speed transponder system developed as a train position detection system. We installed transponder tags on the Honam high-speed line and measured the number of error-free telegrams received from the transponder tag while the HEMU-430X was running at 268km/h~334km/h. Based on the measurement, we estimated the length of the contact zone formed between the transponder reader and tag. Field test results allow us to estimate how many error-free telegrams can be received when HEMU-430X is at speeds up to 400km/h.

The vertical orbicularis oculi muscle turn-over procedure for the correction of paralytic ectropion of the lower eyelid

  • Azuma, Ryuichi;Aoki, Shimpo;Aizawa, Tetsushi;Kuwabara, Masahiro;Kiyosawa, Tomoharu
    • Archives of Plastic Surgery
    • /
    • v.45 no.2
    • /
    • pp.135-139
    • /
    • 2018
  • Background Static reconstruction surgery that tightens the tension of the inferior tarsus, thereby raising the lax lower eyelid, is a common treatment for paralytic ectropion of the lower eyelid. We present one such operative procedure, in which an orbicularis oculi muscle flap was used. Methods The surgical technique involves partial resection of the tarsus and the skin, as well as a superior-based orbicularis oculi muscle flap that is sutured to the firm tissue present on the Whitnall tubercle. The muscle flap is approximately 7 mm in width and 15 mm in length, with a superior pedicle that is attached to the tarsus at the medial point of the resected tarsus. The procedure results in contact between the ocular surface and the lower eyelid. Results The procedure was performed in 11 patients with lower eyelid ectropion due to facial paralysis. Ten cases showed a favorable outcome following surgery, with stable results seen over an average follow-up period of 4.5 years. In one case, recurrence of ectropion was observed 2 months after surgery due to an insufficient correction, and the patient required repeat surgery. Conclusions The orbicularis oculi muscle flap was an effective means of suspension and was able to maintain long-term traction tension. This procedure can therefore be considered a favorable treatment option for lower eyelid ectropion due to facial paralysis.

Damage mechanism of particle impact in a ${Al_2}}O_3}-TiO_2$plasma coated soda-lime glass (${Al_2}}O_3}-TiO_2$ 플라즈마 코팅된 유리의 입자충격에 의한 손상기구)

  • Suh, Chang-Min;Lee, Moon-Hwan;Hong, Dea-Yeong
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.22 no.3
    • /
    • pp.529-539
    • /
    • 1998
  • A quantitative study of impact damage of ${Al_2}}O_3}-TiO_2$ plasma coated soda-lime glasses was carried out and compared with that of the uncoated smooth glass specimen. The shape of cracks by the impact of steel ball was observed by stereo-microscope and the decrease of the bending strength due to the impact of steel ball was measured through the 4-point bending test. At the low velocity, cone cracks were occurred. As the impact velocity increases, initial lateral cracks were propagated on the slanting surface of a cone crack, and radial cracks were generated at the crushed site. When the impact velocity of steel ball exceeds the critical velocity, the contact site of specimen was crushed due to plastic deformation and then radial and lateral cracks were largely grown. Crack length of coated specimens was smaller than that of uncoated smooth specimen due to the effect of coating layer on the substrate surface. According to impact velocity, the bending strength of coated specimens had no significant difference, compared with that of the uncoated smooth specimen. But this represents that the bending strength of coated specimens was increased, considering the effect of sand blasting damage which was performed to increase the adhesion force of coating layer.

Fabrication of ion implanted GaAs MESFET with Si selectively diffused low resistive layer (선택적 Si 확산을 이용한 저저항층을 갖는 이온주입 GaAs MESFET)

  • 양전욱
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.36D no.3
    • /
    • pp.41-47
    • /
    • 1999
  • Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

  • PDF