• Steel and Composite Structures
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• v.42 no.1
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• pp.49-57
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• 2022

This paper presents a study on the behavior of a bolted T-stub to square tube connection using Thread-fixed One-side Bolts (TOBs) through tests and numerical simulations. It outlines a research work of four connections with focus on the failure modes and strengths of the connection under tensile load. It was observed that the thread anchor failure caused by shear failure of hole threads controlled the final failure of the connection in the tests. Meanwhile, the out-of-plane deformation of tube wall resulted in the contact separation between hole threads and bolt threads, which in turn reduced the shear strength of hole threads. Finite element models (FEMs) allowing for the configuration details of the TOBs fixed connection are then developed and compared with the test results. Subsequently, the failure mechanism of hole threads and stress distribution of each component are analyzed based on FEM results. It was concluded that the ultimate strength of connection was not only concerned with the shear strength of hole threads, but also was influenced by the plastic out-of-plane deformation of tube wall. These studies lay a foundation for the establishment of suitable design methods of this type of connection.

• Structural Engineering and Mechanics
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• v.72 no.5
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• pp.557-568
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• 2019

Accurate modeling of contact interface in bolted joints is crucial in predicting the dynamic behavior for bolted assemblies under external load. This paper presents a contact pressure distribution based non-uniform virtual material method to describe the joint interface of assembly structure, which is connected by sparsely distributed multi-bolts. Firstly, the contact pressure distribution of bolted joints is obtained by the nonlinear static analysis in the finite element software ANSYS. The contact surface around bolt hole is divided into several sub-layers, and contact pressure in each sub-layer is thought to be evenly. Then, considering multi-asperity contact at the micro perspective, the relationship between contact pressure and interfacial virtual material parameters for each sub-layer is established by using the fractal contact theory. Finally, an experimental platform for the dynamic characteristics testing of a beam lap structure with double-bolted joint is constructed to validate the efficiency of proposed method. It is found that the theoretical results are in good agreement with experimental results by impact response in both time- and frequency-domain, and the relative errors of the first four natural frequencies are less than 1%. Furthermore, the presented model is used to examine the effect of rough contact surface on dynamic characteristics of bolted joint.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.80-84
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• 1996

The effects of guide pads on burnishing action and accuracy of machined hole are investigated in drilling with burnishing drill using a speciaaly designed tool experimentally. The cutting forces are balanced at the small forward regions of guide pads. The burnishing action takes place under a high contact pressure between the bore wall and those regions. The over size mechanism of machined hole by the guide pads is discussed.

• Journal of Welding and Joining
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• v.32 no.6
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• pp.35-40
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• 2014

The contact tip for gas metal arc welding has important functions to transmit the welding current to the wire and to guide the wire to molten pool. If the contact tip is damaged, it is a cause of lowering the welding productivity due to removal of welding defects and replacement of contact tip. In case of the use of a contact tip for a long time the arc is unstable because the processed hole in the contact tip center is larger, and the variation of aiming position of the welding wire causes a seam tracking error. In this study, gas metal arc welding experiments using contact tip of three different materials were performed. The contact tips with Cu-P, Cu-Cr, and Cu-ODS were used at the experiments, and the welding characteristics by each contact tip were evaluated. After welding contact tip appearance, welding spatter adhesion amount of the nozzle, and weld bead appearance were evaluated. The welding current and welding voltage were measured to verify arc stability during arc welding.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.2-244.2
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• 2013

Contact Pattern을 Plasma Etching을 통해 Pattering 공정을 진행함에 있어서 Plasma 내에 존재하는 High Energy Ion 들의 Bombardment 에 의해, Contact Bottom 의 Silicon Lattice Atom 들은 Physical 한 Damage를 받아 Electron 의 흐름을 방해하게 되어, Resistance를 증가시키게 된다. 또한 Etchant 로 사용되는 Fluorine 과 Chlorine Atom 들은, Contact Bottom 에 Contamination 으로 작용하게 되어, 후속 Contact 공정을 진행하면서 증착되는 Ti 나 Co Layer 와 Si 이 반응하는 것을 방해하여 Ohmic Contact을 형성하기 위한 Silicide Layer를 형성하지 못하도록 만든다. High Aspect Ratio Contact (HARC) Etching 을 진행하면서 Contact Profile을 Vertical 하게 형성하기 위하여 Bias Power를 증가하여 사용하게 되는데, 이로부터 Contact Bottom에서 발생하는 Etchant 로 인한 Damage 는 더욱 더 증가하게 된다. 이 Damage Layer를 추가적인 Secondary Damage 없이 제거하기 위하여 본 연구에서는 원자층 식각방법(Atomic Layer Etching Technique)을 사용하였다. 실험에 사용된 원자층 식각방법을 이용하여, Damage 가 발생한 Si Layer를 Secondary Damage 없이 효과적으로 Control 하여 제거할 수 있음을 확인하였으며, 30 nm Deep Contact Bottom 에서 Damage 가 제거될 수 있음을 확인하였다. XPS 와 Depth SIMS Data를 이용하여 상기 실험 결과를 확인하였으며, SEM Profile 분석을 통하여, Damage 제거 결과 및 Profile 변화 여부를 확인하였으며, 4 Point Prove 결과를 통하여 결과적으로 Resistance 가 개선되는 결과를 얻을 수 있었다.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.860-864
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• 2012

The contact tip is higher the wear of resistance and the longer life are demanded to GMA welding process. In this study, four different contact tips with three different compositions by two wires were evaluated their wear resistance by measuring in every one hour the area of enlarged hole at the exit side during actual wleding. Experimental results clearly showed that the Cr-containing tips strengthened by precipitation hardening have much better resistance to wear than those made by work hardening. In addition, flux cored wire is excellent abrasion resistance test results showed. Based on these results, the domestic industry, the life of the contact tip to know will be used as basic data.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• Tribology and Lubricants
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• v.31 no.1
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• pp.21-27
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• 2015

We carry out experiments to characterize textured bearing steel with varying hole density and depth. Textured surface is believed to reduce the friction coefficient, and improve performance and wearing caused by third-body contact. We employ three lubrication regime conditions based on the Stribeck curve: boundary lubrication, mixed lubrication, and hydrodynamic lubrication. Ultrasonic machining is an untraditional machining method wherein abrasive grit particles are used. The hammering process on the work piece surface by abrasive provides the desired form. In this study, we create multi-holes on the bearing steel surface for texturing purposes. Holes are formed by an ultrasonic machine with a diameter of 0.534 mm and a depth of about 2-4 mm, and they are distributed on the contact surface with a density between 1.37-2.23%. The hole density over the surface area is an important factor affecting the friction. We test nine types of textured specimens using four times replication and compare them with the untextured specimen using graphs, as well as photographs taken using a scanning electron microscope. We use Analyzes variant in this experiment to find the correlation between each pair of treatments. Finally, we report the effect of hole density and depth on the friction coefficient.