• Title/Summary/Keyword: contact hole

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Realization of flexible polymer solar cell by annealing-free process using 1,8-Diiodooctane as additive

  • Kim, Youn-Su;Ju, Byeong-Kwon;Kim, Kyung-Kon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.383-383
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    • 2011
  • We fabricated thermal annealing-free polymer solar cells (PSC) by processing with additive and applied to flexible substrates. The 1, 8-Diiodooctane of 3 vol% blended with active solution resulted in enhancement of $J_{SC}$ due to increase of light absorption and hole mobility as improving the crystallinity of P3HT. In addition, the $V_{OC}$ of PSCs with additive was improved by inserting $TiO_2$ layer without any treatment. The $TiO_2$ layer prevented the direct contact between active layer and Al electrode and reduced the charge recombination near Active/Al interface. It was confirmed by calculation of J0 and photo-voltage transient measurement. The power conversion efficiencies of annealing-free PSCs using additive for ITO glass and flexible (ITO PEN) substrate were obtained 3.03% and 2.45%, respectively.

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Electroless Nickel-Boron Plating on p-type Si Wafer by DMAB (DMAB에 의한 P형 실리콘 기판 무전해 니켈-붕소 도금)

  • 김영기;박종환;이원해
    • Journal of the Korean institute of surface engineering
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    • v.24 no.4
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    • pp.206-214
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    • 1991
  • In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

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Stress Analysis of Mechanically Fastened Joints in MWK Composite Laminate with Different Geometric :Factors and Loading Conditions (다축경편 복합재료 평판의 기계적 체결시 기하학적 형상 및 하중조건에 다른 응력해석)

  • Choi J.-M.;Jo M.-G.;Chun H.-J.;Byun J.-H.
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2004.04a
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    • pp.246-249
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    • 2004
  • When MWK (Multiaxial Warp Knitted Fabric) composites are applied for the structures, the connections of each component using mechanical fastening is needed. The local contact between the bolted joint and the composite laminates may induce high stress concentration or breakdown in the laminates for the mechanical joints. There for, it is strongly required to study the characteristics of mechanically joints of MWK composite laminates. In this study, stress analysis near the hole boundary of MWK composite laminate is conducted with various geometric factors under different loadings. In the case of multi-pin loaded MWK composite laminates, the results show that the types of loadings and geometric factors of mechanical joints have a significant influence on the joint performances.

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New p-type Organic Semiconducting Materials for Organic Transistor (유기트랜지스터용 p-type 유기반도체 개발)

  • Kang In-Nam;Lee Ji-Hoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.558-562
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    • 2006
  • We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

The analysis of checking results and electric shock accident happens at domestic and foreign low-voltage handhole (국내외 저압지중함의 감전사고 및 점검결과 분석)

  • Kim, Han-Sang;Bang, Sun-Bae;Kim, Chong-Min;Han, Woon-Ki
    • Proceedings of the KIEE Conference
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    • 2007.04b
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    • pp.91-94
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    • 2007
  • The increased use of underground power distribution as opposed to overhead lines contributes to the aesthetics of the downtown areas. But there is an inherent risk of accidental electrocution should there be damage to the insulation of the cable because of heavy rain. Should a pedestrian make contact with this cable indirectly, via a man hole cover, electrocution could result. In this paper, we analyse electrical shock accident and checking results in this low-voltage handhole.

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A highly integrable p-GaN MSM photodetector with GaN n-channel MISFET for UV image sensor system

  • Lee, Heon-Bok;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.17 no.5
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    • pp.346-349
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    • 2008
  • A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

a-Si:H Photosensor Using Cr silicide Schottky Contact

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.4 no.3
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    • pp.105-107
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    • 2006
  • Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

A research on the actual condition of the underground manhole in domestic (국내 저압지중함의 현장실태조사)

  • Kim, Han-Sang;Kim, Chong-Min;Bae, Suk-Myong
    • Proceedings of the KIEE Conference
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    • 2006.07e
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    • pp.91-92
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    • 2006
  • The increased use of underground power distribution as opposed to overhead lines contributes to the aesthetics of the downtown areas. But there is an inherent risk of accidental electrocution should there be damage to the insulation of the cable because of heavy rain. Should a pedestrian make contact with this cable indirectly, via a man hole cover, electrocution could result. In this paper, we analyse weaknesses in this low-voltage manhole and propose improvements.

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Study on the ITO Pre-treatment for the Highly Efficient Solution Processed Organic Light-emitting Diodes (고효율의 용액공정용 유기 발광 다이오드 제작을 위한 ITO 전처리 연구)

  • Choi, Eun-Young;Seo, Ji-Hyun;Choi, Hak-Bum;Je, Jong-Tae;Kim, Young-Kwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.1
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    • pp.18-23
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    • 2010
  • We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.

Gas Flow Rate Dependency of Etching Result: Use of VI Probe for Process Monitoring (가스 유량 변화에 따른 식각 공정 결과: VI Probe 활용 가능성 제안)

  • Song, Wan Soo;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.3
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    • pp.27-31
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    • 2021
  • VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.