• Title/Summary/Keyword: contact effect

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A Study on the Behavior Characteristics of a Tensioning Device of a Catenary System According to the Longitudinal Dynamic Displacement of Railroad Bridge (철도교량의 종방향 동적 변위에 따른 전차선로 장력조정장치 거동특성에 관한 연구)

  • Na, Youn-Il;Lee, Jae-Bong;Kim, Jae-Moon;Kim, Yang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.10
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    • pp.1517-1522
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    • 2015
  • Since electric railroad vehicle pass through repeatedly on the railroad bridge, the dynamic load that causes the change of tension of contact wire affect it constantly. In this paper, we measured the dynamic displacement of the railroad bridges to analyze the effect of tension in the catenary. A result of dynamic measurement of the longitudinal displacement, it's maximum value was 39.9mm which was lower than the primary management criteria 378mm. Also on the based of a maximum temperature, it shows a feature that the longitudinal displacement value increased as temperature rise from April to October. In terms of behavior characteristics of a tensioning device, it was confirmed to be the value of 50mm stroke movement when the temperature changes ±5℃.

A Study on the Improvement of the Interface Contact and the Prevention of the Charge Recombination by the Surface Treatment of Transparent Conductive Oxide in Dye-sensitized Solar Cell (염료감응형 태양전지 투명전도성 막의 표면처리를 통한 계면 접촉 향상 및 재결합 방지 연구)

  • Seo, Hyun-Woong;Hong, Ji-Tae;Son, Min-Kyu;Kim, Jin-Kyoung;Shin, In-Young;Kim, Hee-Je
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.11
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    • pp.2214-2218
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    • 2009
  • Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

A Heating Apparatus for Semiconductor Manufacturing using Direct Heating Method (직접 가열 방식을 이용한 반도체 제조용 히팅 장치)

  • Jung, Soon-Won;Koo, Kyung-Wan
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.57 no.4
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    • pp.408-411
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    • 2008
  • As to this research is new structure of the semiconductor substrate heating apparatus. The fast thermoresponsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. For this, it adheres closely to the substrate, in which the photosensitive film is coated and the heating plate layer, adhering closely to the floor side of a substrate the mica layer which adheres closely to the floor side of the upper heating plate layer in order to minimize an insulation and heat loss, and the lower part of the mica layer and it is comprised of the floor plate layer. The heating plate layer forms the continued groove portion over the floor side whole. The sheath heater for heating a substrate is inserted with the groove portion and the heating plate layer is comprised. It is confirmed that by using the new substrate heating structure, the temperature change of the heating plate against the time is observed. Then, there is the electric power saving effect of about 40% in comparison with the existing method.

Electromigration Characteristics Stduy DCV Interconnect Structures in Cu Dual-Damascene Process (Cu Dual Damascene 배선 공정에서의 DCV 배선구조의 EM 특성 연구)

  • Lee, Hyun-Ki;Choi, Min-Ho;Kim, Nam-Hoon;Kim, Sang-Yong;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.123-124
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    • 2005
  • We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

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Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film (고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성)

  • Hyung, Gun-Woo;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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Effect of a Prolonged-run-induced Fatigue on the Ground Reaction Force Components (오래 달리기로 인한 피로가 지면반력 성분에 미치는 영향)

  • Ryu, Ji-Seon
    • Korean Journal of Applied Biomechanics
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    • v.23 no.3
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    • pp.225-233
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    • 2013
  • The purpose of this study was to estimate the potential injury via analyzing ground reaction force components that were resulted from a prolonged-run-induced fatigue. For the present study, passive and active components of the vertical ground reaction force were determined from time and frequency domain. Shear components of GRF also were calculated from time and frequency domain. Twenty subjects with rear foot contact aged 20 to 30, no experience in injuries of the extremities, were requested to run on the instrumented tread-mill for 160 minutes at their preference running speed. GRF signals for 10 strides were collected at 5, 35, 65, 95, 125, and 155 minute during running. In conclusions, there were no significant difference in the magnitude of passive force, impact load rate, frequency of the passive and active components in vertical GRF between running times except the magnitude of active force (p<.05). The magnitude of active force was significantly decreased after 125 minute run. The magnitude of maximum peak and maximum frequency of the mediolateral GRF at heel strike and toe-off have not been changed with increasing running time. The time up to the maximum peak of the anteroposterior at heel-strike moment tend to decrease (p<.05), but the maximum peak and frequency of that at heel and toe-off moment didn't depend significantly on running time.

Reliability analysis of LNG unloading arm considering variability of wind load (풍하중의 변동성을 고려한 LNG 하역구조물의 신뢰성해석)

  • Kim, Dong Hyawn;Lim, Jong Kwon;Koh, Jae Pil
    • Journal of Korean Society of Steel Construction
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    • v.19 no.2
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    • pp.223-231
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    • 2007
  • Considering wind speed uncertainty, reliability analysis of the LNG unloading arm at Tongyoung Production Site was performed. Extreme distribution of wind speed was estimated from the data collected at the weather center and wind load was calculated using wind velocities and coefficients of wind pressure. The unloading arm was modeled with plate and solid elements. Contact elements were used to describe the interface between base of structure andground. Response surface for maximum effective stress was found for reliability analysis and then reliability functions was defined and used to determine exceeding probability of allowable and yield stresses. In addition, sensitivity analysis was also performed to estimate the effect of possible material deterioration in the future.

Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning

  • Kim, Hong Jin
    • Tribology and Lubricants
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    • v.31 no.6
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    • pp.239-244
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    • 2015
  • Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

Characterization of Plasma with Heating Treatment of ITO on the Efficiency of Polymer Solar Cells

  • Kim, Jung-Woo;Kim, Nam-Hun;Kim, Hyoung-Sub;Jung, Dong-Geun;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.301-301
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    • 2010
  • In order to enhance the efficiency of the organic solar cells, the effects of plasma surface treatment with using $CF_4$ and $O_2$ gas on the anode ITO were studied. The polymer solar cell devices were fabricated on ITO glasses an active layer of P3HT (poly-3-hexylthiophene) and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) mixture, without anode buffer layer, such as PEDOT:PSS layer. The metallic electrode was formed by thermally evaporated Al. Before the coating of organic layers, ITO surface was exposed to plasma made of $CF_4$ and $O_2$ gas, with/without heat treatment. In order to identify the effect the surface treatment, the current density and voltage characteristics were measured by solar simulator and the chemical composition of plasma treated ITO surface was analyzed by using X-ray photoelectron spectroscopy(XPS). In addition, the work function of the plasma treated ITO surface was measured by using ultraviolet photoelectron spectroscopy(UPS). The effects of plasma surface treatment can be attributed to the removal organic contaminants of the ITO surface, to the improvement of contact between ITO and buffer layer, and to the increase of work function of the ITO.

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An Investigation of Welding Variables on Resistance Upset Welding for End Capping of HWR Fuel Elements (중수로 핵연료 봉단마개의 저항업셋 용접을 위한 용접변수)

  • 이정원;박춘호;고진현;정성훈;정문규
    • Journal of Welding and Joining
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    • v.7 no.2
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    • pp.60-69
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    • 1989
  • The present study was aimed at investigating the effect of welding parameters such as welding current, electrode force(or squeeze force) and parts cleaning on the sound weld, and establishing the most reliable weld conditions for HWP(Heavy Water Reactor) fuel end capping with the resistance upset butt welding. Major results obtained are as follows. 1. The amount of sound weld was increased with increasing weld current(5.0-11KA) because the activated diffusion with increasing heat generation played an important role in eliminating the porosity and weld line in the weld interface. 2. It was found that weld current was not significantly influenced by the electrode force although the increase of it caused a slight increase of weld current and upset deformation. 3. Acetone rinsing before drying for the Zircaloy-4 end cap cleaning produced the reliable sound weld because it would remove the remaining solvent and surface films, and provided the uniform contact between the end cap and the tube. 4. The optimum welding conditions for fuel end capping by a resistance upset hytt welding are obtained as follows. weld current: 10-11KA, electrode force: 62-90KPa parts cleaning: vapor degreasing.rarw.water, acetone rinsing.rarw.drying.

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