• Journal of Information Display
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• v.8 no.1
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• pp.1-5
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• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• Proceedings of the Zoological Society Korea Conference
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• 2000.10a
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• pp.181.2-182
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• 2000

No Abstract, See Full Text

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.93-94
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• 2008

In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.184-184
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• 2013

본 연구에서는 금 합금 도금층의 접촉저항에 미치는 첨가 합금원소의 영향을 조사하였다. 또한 표면실장을 위한 솔더링 공정에서 도금층에 가해지는 열이력이 접촉저항 값에 미치는 영향을 조사하기 위해서, $260^{\circ}C$에서 thermal aging을 실시한 후, 접촉저항을 측정하였다. 합금원소의 종류에 따라서 thermal aging후의 접촉저항 값이 변하는 요인을 조사하기 위해서 XPS를 이용하여 표면분석을 실시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.271-272
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• 2007

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.112-114
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• 1988

W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

• Proceedings of the Zoological Society Korea Conference
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• 1997.10b
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• pp.184.1-184
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• 1997

No Abstract, See Full Text

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.713-715
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• 2009

• Korean Membrane Journal
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• v.3 no.1
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• pp.51-58
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• 2001

The surface of Poly(ether imide) (PEI) membranes has been sulfonated using CIS03H. The resulting membranes were characterized through the analysis of ESCA and contact angle measurements The sulfonated PEI membranes were exposed to gases of $O_2$, $N_2$, and $CO_2$ to measure the permeation rates and ideal separation factors. In addition, the diffusivities and solubilities of individual gases were measured. The diffusivity effect is more dominant than the solubility one on gas transports.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.186-192
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• 2000

The heat generated in contact type braking system can cause an unacceptable braking performance. Thermal behavior of ventilated disk brake system is presented in this paper. The temperature and velocity fields of 3-D unsteady simulated model are obtained using a software package "FLUENT". The numerical results show that there exits a temperature nonuniformity between the disk faces contacting with pads. The conduction rate through the disk and pad is calculated and the effect of material conductivity is also investigated.estigated.