• Title/Summary/Keyword: contact barrier

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Preparation of Carrageenan-based Antimicrobial Films Incorporated With Sulfur Nanoparticles

  • Saedi, Shahab;Shokri, Mastaneh;Rhim, Jong-Whan
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.26 no.3
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    • pp.125-131
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    • 2020
  • Carrageenan-based functional films were prepared by adding two different types of sulfur nanoparticles (SNP) synthesized from sodium thiosulfate (SNPSTS) and elemental sulfur (SNPES). The films were characterized using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction spectroscopy (XRD), and thermal gravimetric analysis (TGA). Also, film properties such as UV-visible light transmittance, water contact angle (WCA), water vapor permeability (WVP), mechanical properties, and antibacterial activity were evaluated. SNPs were uniformly dispersed in the carrageenan matrix to form flexible films. The addition of SNP significantly increased the film properties such as water vapor barrier and surface hydrophobicity but did not affect the mechanical properties. The carrageenan/SNP composite film showed some antibacterial activity against foodborne pathogenic bacteria, L. monocytogenes and E. coli.

Surface Coating Treatment of Phosphor Powder Using Atmospheric Pressure Dielectric Barrier Discharge Plasma (대기압 유전체배리어방전 플라즈마를 이용한 형광체 분말 코팅)

  • Jang, Doo Il;Ihm, Tae Heon;Trinh, Quang Hung;Jo, Jin Oh;Mok, Young Sun;Lee, Sang Baek;Ramos, Henry J.
    • Applied Chemistry for Engineering
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    • v.25 no.5
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    • pp.455-462
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    • 2014
  • This work investigated the hydrophobic coating of silicate yellow phosphor powder in the form of divalent europium-activated strontium orthosilicate ($Sr_2SiO_4:Eu^{2+}$) by using an atmospheric pressure dielectric barrier discharge (DBD) plasma with argon as a carrier and hexamethyldisiloxane (HMDSO), toluene and n-hexane as precursors. After the plasma treatment of the phosphor powder, the lattice structure of orthosilicate was not altered, as confirmed by an X-ray diffractometer. The coated phosphor powder was characterized by scanning electron microscopy, fluorescence spectrophotometry and contact angle analysis (CAA). The CAA of the phosphor powder coated with the HMDSO precursor revealed that the water contact angle increased from $21.3^{\circ}$ to $139.5^{\circ}$ (max. $148.7^{\circ}$) and the glycerol contact angle from $55^{\circ}$ to $143.5^{\circ}$ (max. $145.3^{\circ}$) as a result of the hydrophobic coating, which indicated that hydrophobic layers were successfully formed on the phosphor powder surfaces. Further surface characterizations were performed by Fourier transform infrared spectroscopy and X-ray photoelectron spectrometry, which also evidenced the formation of hydrophobic coating layers. The phosphor coated with HMDSO exhibited a photoluminescence (PL) enhancement, but the use of toluene or n-hexane somewhat decreased the PL intensity. The results of this work suggest that the DBD plasma may be a viable method for the preparation of hydrophobic coating layer on phosphor powder.

Surface Modification of Polyurethane Film Using Atmospheric Pressure Plasma (대기압 플라스마에 의한 폴리우레탄 필름의 표면 개질)

  • Yang In-Young;Myung Sung-Woon;Choi Ho-Suk;Kim In-Ho
    • Polymer(Korea)
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    • v.29 no.6
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    • pp.581-587
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    • 2005
  • Commercial polyurethane film (PU) was modified with Ar plasma ionized in dielectric barrier discharge (DBD) plate-type reactor under atmospheric pressure. We measured the change of the contact angle and the surface fee energy with respect to the plasma treatment conditions such as treatment time, RF-power, and Ar gas flow rate. We also optimized the plasma treatment conditions to maximize the surface peroxide concentration. At the plasma treatment time of 70 sec, the power of 120 W and the Ar gas flow rate of 5 liter per minute (LPM), the best wettability and the highest surface fee energy were obtained. The 1,1 diphenyl-2-picrylhydrazyl (DPPH) method confirmed that the surface peroxide concentration was about 2.1 nmol/$\cm^{2}$ at 80 W, 30 sec, 6 LPM.

Effect of Insamyangyoung-tang on the TEWL of High Dose Steroid Injected Hairless Mice (인참양영탕(人參養榮湯)이 장기간 고용량 스테로이드 투여 hairless mice의 피부장벽에 미치는 영향)

  • Nam, Hae-Jeong;Kim, Yoon-Bum
    • The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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    • v.21 no.2
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    • pp.19-27
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    • 2008
  • Objective : The side effect of prolonged use of topical corticosteroids to skin is well-known. Moreover, resent studies have shown that prolonged use of systemic corticosteroids also negatively impacts skin barrier function. Corticosteroids have a major role in the practical management of many variable conditions. So, it is important to find the drug or the method which could protect the skin from the damage caused by corticosteroids. At former study, we investigated that Insamyangyoung-tang has some effect on skin barrier function of DNCB induced contact dermatitis hairless mice. So, this study was performed to research the effect of Insamyangyoung-tang on the TEWL with high dose steroid injected hairless mice. Method : Hairless mice were divided into 4 groups ; Control group, Group A, Group B and Group C. All groups were injected triamcinolone O.4mg for 10 times. Control group was medicated distilled water during the experimental period. Group A was medicated distilled water for 5 days before the $1^{st}$ injection day, and then medicated Insamyangyoung-tang extract during the experimental period. Group B was medicated Insamyangyoung-tang extract for 5 days before the $1^{st}$ injection day, and then medicated distilled water during the experimental period. Group C was medicated Insamyangyoung-tang extract for 5 days before the $1^{st}$ injection day, and then medicated Insamyangyoung-tang extract during the experimental period. TEWL of each group was measured for 5 times. After the $10^{th}$ injection, the tissue sample was made and the damage of epithelial cell was examined. Statistical significance was set at p<0.05 by using non parametric methods and repeated-anova.. Results : Group C showed significant effect on TEWL change of hairless mice evoked by triamcinolone injection. Group A and Group B also showed some effect, but there was no statistical significance.

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Decomposition of Aqueous Anatoxin-a Using Underwater Dielectric Barrier Discharge Plasma Created in a Porous Ceramic Tube (다공성 세라믹관내에서 생성되는 수중 유전체 장벽 방전 플라즈마를 이용한 아나톡신-a의 분해)

  • JO, Jin-Oh;Jwa, Eunjin;Mok, Young-Sun
    • Journal of Korean Society of Water and Wastewater
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    • v.30 no.2
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    • pp.167-177
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    • 2016
  • This work investigated the decomposition of aqueous anatoxin-a originated from cyanobacteria using an underwater dielectric barrier discharge plasma system based on a porous ceramic tube and an alternating current (AC) high voltage. Plasmatic gas generated inside the porous ceramic tube was uniformly dispersed in the form of numerous bubbles into the aqueous solution through the micro-pores of the ceramic tube, which allowed an effective contact between the plasmatic gas and the aqueous anatoxin-a solution. Effect of applied voltage, treatment time and the coexistence of nutrients such as $NO_3{^-}$, $H_2PO_4{^-}$ and glucose on the decomposition of anatoxin-a was examined. Chemical analyses of the plasma-treated anatoxin-a solution using liquid chromatography-mass spectrometry (LC-MS) and ion chromatography (IC) were performed to elucidate the mineralization mechanisms. Increasing the voltage improved the anatoxin-a decomposition efficiency due to the increased discharge power, but the energy required to remove a given amount of anatoxin-a was similar, regardless of the voltage. At an applied voltage of 17.2 kV (oxygen flow rate: $1.0L\;min^{-1}$), anatoxin-a at an initial concentration of $1mg\;L^{-1}$ (volume: 0.5 L) was successfully treated within 3 min. The chemical analyses using LC-MS and IC suggested that the intermediates with molecular weights of 123~161 produced by the attack of plasma-induced reactive species on anatoxin-a molecule were further oxidized to stable compounds such as acetic acid, formic acid and oxalic acid.

Fabrication of SiC Schottky Diode with Field oxide structure (Field Oxide를 이용한 고전압 SiC 쇼트키 diode 제작)

  • Song, G.H.;Bahng, W.;Kim, S.C.;Seo, K.S.;Kim, N.K.;Kim, E.D.;Park, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.350-353
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    • 2002
  • High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

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XPS Analysis of PVDF Film Treated by Corona Discharge in Ethyl Methacrylate Vapor Atmosphere (에틸메타크릴레이트 증기 분위기에서 코로나 방전 처리한 PVDF 필름의 XPS 분석)

  • Moon, HuiKwon;Seomoon, Kyu
    • Applied Chemistry for Engineering
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    • v.27 no.6
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    • pp.627-632
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    • 2016
  • Ethyl methacrylate (EMA) monomer coupling onto the polyvinylidene fluoride (PVDF) film surface was attempted to enhance the interfacial adhesive force between PVDF-polyvinyl chloride (PVC) bilayer films via dielectric barrier corona discharge. The interfacial forces were quite enhanced when PVDF films were treated by corona discharge in an EMA 1% atmosphere. The contact angle of PVDF films decreased due to corona treatment. X-ray photoelectron spectroscopy (XPS) analysis showed that the carbon and oxygen content of the PVDF film surface increased with corona discharge while the fluoride content decreased. The curve fitting of XPS $C_{1s}$ peaks revealed that the non-polar C-C bonded carbon and oxygen-bonded carbon increased gradually with corona treatment, while the fluorine-bonded carbon decreased.

Scanning Kelvin Probe Microscopy analysis of silicon carbide device structures (Scanning Kelvin Probe Microscopy를 이용한 SiC 소자의 분석)

  • Jo, Yeong-Deuk;Ha, Jae-Geun;Koh, Jung-Hyuk;Bang, Uk;Kim, Sang-Cheol;Kim, Nam-Gyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.132-132
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    • 2008
  • Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

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Characteristics of Ganoderma lucidum during short log cultivation with soil contact barrier treatment (영지버섯(Ganoderma lucidum) 단목재배시 토양접촉차단재 처리별 자실체 특성)

  • Kim, Minkyeong;Hwang, Jae Soon;Park, Jung-Hee;Shin, Yong seub;Jo, Woo-Sik
    • Journal of Mushroom
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    • v.16 no.3
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    • pp.231-235
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    • 2018
  • Arthrographis cuboidea is a wood rot fungus found in soil. It causes disease in repeated cultivation areas of Ganoderma lucidum, which damage the mushroom logs and causes considerable loss of income to mushroom farmers. This study aimed to investigate the physicochemical properties of soil and characteristics of the growth environment such as the temperature of the Ganoderma lucidum cultivated land. The time required for primordia initiation was 12-13 days. In the chromaticity survey, the degree of redness (a) was 19.5 for vinyl, 20.2 for control, and 19.5 for nonwoven. The yellowness index (b) was 12.7 for vinyl, 13.3 for control, and 12.4 for nonwoven. In the study of growth characteristics, in case of no treatment (control), the length and thickness of the pileus were measured as 145.7 mm and 23.6 mm and those of the stipe were 73.9 mm and 11.5 mm, respectively, and the weight was 130 g. Treatment with non-woven fabric resulted in 157 mm and 93.3 mm long and 22.3 mm and 11.9 mm thick pileus and stipe, respectively, and the weight was 164 g. This result indicates that treatment with non-woven fabric is better than no treatment with respect to Ganoderma lucidum growth.

The Characteristic Improvement of Photodiode by Schottky Contact (정류성 접합에 의한 광다이오드의 특성 개선)

  • Hur Chang-wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1448-1452
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    • 2004
  • In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.