• Title/Summary/Keyword: constant power

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Performance Analysis of a CE-CPSK modulated code acquisition system for nonlinear amplified DS-CDMA signal (비선형 전력증폭기로 인한 CE-CPSK 변조된 DS-CDMA 초기동기 시스템의 성능분석)

  • Kim Seong-Cheol
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.1
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    • pp.49-56
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    • 2006
  • In this paper, to overcome the effect of nonlinear power amplifier, CE-CPSK(Constant Envelope Continuous Phase Shift Keying)modulation method which has the constant envelope and continuous phase characteristics is proposed. The code acquisition performances of the CE-CPSK modulated system and BPSK system are analyzed. And the performance is evaluated in terms of mean acquisition time and detection probability with the output backoff of the amplifier in multiuser environment. Results performed in a channel having a high degree of AM nonlinearity(AM-to-AM conversion), have shown that the CE-CPSK signal, when passed through class C-nonlinear Amplifier, has a spectrum with greatly reduced sidelobes compared to the conventional BPSK signal. The code acquisition performance of a CE-CPSK modulation system is better than that of BPSK system with nonlinear amplified multiuser environments.

$C_{x}F_{y}$ Polymer Film Deposition in rf and dc $C_{7}F_{16}$ Vapor Plasmas

  • Sakai, Y.;Akazawa, M.;Sakai, Yosuke;Sugawara, H.;Tabata, M.;Lungu, C.P.;Lungu, A.M.
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.1
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    • pp.1-6
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    • 2001
  • $C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

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Single-stage Dimmable PFC DCM Flyback Converter without Electrolytic Capacitor (전해 커패시터를 제거하고 디밍이 가능한 고수명 단일단 PFC DCM 플라이백 컨버터)

  • Jin, Dal-Rae;Kim, Choon-Taek;Chae, Min-Cheol;La, Jae-Du;Kim, Young-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.11
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    • pp.1550-1559
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    • 2013
  • Light emitting diode(LED) lighting has been applied various industry fields because of its high efficiency, low power consumption, long life time, and environment friendly characteristics. Generally, LED lighting needs a driver to maintain constant current. Most popular driver is the switching converter. In the converter, there are several electrolytic capacitors. However the lifespan of the electrolytic capacitor is much shorter than LED. Therefore the lifespan of LED lighting with electrolytic capacitor is decreased. Also, LED lighting needs dimming control because of various needs and energy saving. This paper presents the dimmable single-stage PFC DCM flyback converter without electrolytic capacitor and parallel LC resonant filter for reducing 120[Hz] ripple on the output. The type 2 controller is used to maintain constant current and the analog dimming control is used. The proposed converter is verified through simulation and experimental works.

SPICE Model of Drain Induced Barrier Lowering in Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET (무접합 원통형 MOSFET에 대한 드레인 유도 장벽 감소의 SPICE 모델)

  • Jung, Hak Kee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.278-282
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    • 2018
  • We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient ${\eta}$, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of ${\eta}$ remains nearly constant.

Dynamic Modeling and Observer-based Servomechanism Control of a Towing Rope System

  • Tran, Anh Minh D.;Kim, Young Bok
    • Journal of Drive and Control
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    • v.13 no.4
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    • pp.23-30
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    • 2016
  • This paper presents a control-oriented dynamical model of a towing rope system with variable-length. In this system, a winch driven by a motor's torque uses the towing rope to pull a cart. In general, it is a difficult and complicated process to obtain an accurate mathematical model for this system. In particular, if the rope length is varied by operating the winch, the varying rope dynamics needs to be considered, and the key physical parameters need to be re-identified... However, real time parameter identification requires long computation time for the control scheme, and hence undesirable control performance. Therefore, in this article, the rope is modeled as a straight massless segment, with the mass of rope being considered partly with that of the cart, and partly as halfway to the winch. In addition, the changing spring constant and damping constant of the towing rope are accounted for as part of the dynamics of the winch. Finally, a reduced-order observer-based servomechanism controller is designed for the system, and the performance is evaluated by computer simulation.

A High Efficiency Bidirectional Resonant Converter With Auxilary LC Circuit for V2G System (V2G 시스템을 위한 보조 LC 회로를 가진 고효율 양방향 공진형 컨버터)

  • Tranand, Duc-Hung;Choi, Woojin
    • Proceedings of the KIPE Conference
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    • 2016.07a
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    • pp.323-324
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    • 2016
  • In this paper a high efficiency bidirectional resonant converterfor Vehicle-to-Grid applications (V2G) is proposed.The proposed converter has adopted an LC auxiliary circuit in the third winding of the transformer. With the proposed method full softswitching can be ensured in all switches over a wide range of loadsand the secondary ringing can be removed with no additional snubber or clamp circuitry.In addition, since the proposed resonant converter is able to operate at an almost constant resonant frequencyregardless of the load, CC/CV charge of the battery can be simply implemented with high efficiency. A 3.3 kW bidirectional converter for On-Board Charger of Electric Vehicle is implemented to verify the validity of the proposed method. The experimental results show the high efficiency characteristics of the proposed converter over the wide range of load in both charge and discharge mode. The maximum efficiency of the proposed system was 98.13 % at 2.3 kW during the constant voltage mode charge operation.

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Properties wRh Ca Substitutional Contents of $SrTiO_{3}$ Ceramic Thin Film ($SrTiO_{3}$ 세라믹 박막의 Ca 치환량에 따른 특성)

  • Kim Jin-Sa;Oh Yong-Cheol;Cho Choon-Nam;Shin Cheol-Gi;Song Min-Jong;Choi Woon-Shik;Park Min-Sun;Kim Chung-Hyeok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.9
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    • pp.397-402
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    • 2005
  • The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

Stress Corrosion Cracking Susceptibility Evaluation by Small Punch Test (소형펀치시험법에 의한 응력부식균열 감수성평가에 관한 연구)

  • 유효선;이송인;정세희
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.8
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    • pp.2033-2042
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    • 1993
  • In conventional SCC susceptibility test, there are constant strain test, constant load test, slow strain rate test(SSRT) and K$_{ISCC}$ test. Among them, the SSRT method is much more aggressive in producing SCC than the other tests, so that the test time of it is considerably reduced. But this SSRT method has mostly been worked using the uniaxial tensile specimen untill now. Therefore, the SSRT method using the tensile specimen(Ten-SSRT) has much difficulty in SCC susceptibility evaluation of a localized region like weldment and the advantage material of high order. Recentely, the small punch(SP) test method using miniaturized small specimen is the very effective test method for fracture strength evaluation of a localized region like weldment and fusion reactor wall irradiated in the nuclear power plant. This paper investigated the possibility of SCC susceptibility evaluation by the SP-SSRT method using the miniaturized small specimen. Therefore, we obtained the result that the SP-SSRT had the possibility for the evaluations of SCC susceptibility for shorter time to corrosive environment compare to Ten-SSRT which was conventional method.

Complex-Channel Blind Equalization using Euclidean-Distance Algorithms with Decision-Directed Modes (Decision-Directed 모드와 유클리드 거리 알고리듬을 사용한 복소채널의 블라인드 등화)

  • Kim, Namyong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.3 no.3
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    • pp.73-80
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    • 2010
  • Complex-valued blind algorithms which are based on constant modulus error and Euclidian distance (ED) between two probability density functions show relatively poor performance in spite of the advantages of information theoretic learning since the inherent characteristics of the constant modulus error prevent the algorithm from coping with the symbol phase rotation caused by the complex channels. In this paper, we show that the symbol phase rotation problem can be avoided and the advantages of information theoretic learning can be preserved by introducing decision-directed mode to the blind algorithm whenever the equalizer output power lies in the neighborhood of multi-modulus levels. Simulation results through MSE convergence and constellation comparison for severely distorted complex channels show significantly enhanced performance of symbol-point concentration and no phase rotation problems caused by the complex channel models.

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Development of a real time neutron Dosimeter using semiconductor (반도체형 실시간 전자적 선량계 개발)

  • Lee, Seung-Min;Lee, Heung-Ho;Lee, Nam-Ho;Kim, Seung-Ho;Yeo, Jin-Gi
    • Proceedings of the KIEE Conference
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    • 2000.11d
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    • pp.754-757
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    • 2000
  • Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

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