• Electrical & Electronic Materials
• /
• v.11 no.10
• /
• pp.94-99
• /
• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.343-346
• /
• 1998

Degradation characteristics of the Pr-based ZnO varistor with $Y_2O_3$content (0.0-4.0 mol!%j were investigated. It was appeared that the variation of the J-E characteristics in the reverse direction before and after the applied stress with increasing $Y_2O_3$ content was larger than that of the forward direction but the variation was extrernly small. For all varistor, the leakage current with the stress time during the applied stress somewhat increased initialy but afterthat was almost constant or slightly decreased. The overall varistor voltage and nonlinear coefficient were less than 5%. Especially, in the case of Pr-based ZnO varistor containing 2.0 mol% to 4.0 mol% $Y_2O_3$, the variation of breakdown voltage and nonlinear coefficient was less than 1% and 5%. respectively. As a result, they showed good stability.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.21 no.4
• /
• pp.47-52
• /
• 2017

PSC (Prestressed Concrete) structures have been used widely for its engineering advantage with using total concrete area as effective compressive section. However tendon inside is exposed to such a high tensile stress that and more attentions should be paid for corrosion control. This work is for changing corrosion current and ultimate strength in tendon with increasing prestressing force in a constant corrosive condition. With increasing prestressing force, corrosion current, corrosion amount, and ultimate load are changed linearly. When prestressing force increases from 20.0 % to 40.0 %, corrosion current increases to 124.4 % and 168.0 % and ultimate load decreases to 87.8 % and 78.4 %, respectively. With inducing constant electrical potential, increasing corrosion current and reduction of strength are evaluated to be linearly related with increasing prestressing load.

• ETRI Journal
• /
• v.34 no.6
• /
• pp.966-969
• /
• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 1998.11a
• /
• pp.165-168
• /
• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.11
• /
• pp.30-36
• /
• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• Research in Community and Public Health Nursing
• /
• v.19 no.3
• /
• pp.431-442
• /
• 2008

Purpose: The Purpose of this study was to examine the degree of obesity stress and analyze factors having an effect on obesity stress among college women. Method: The subjects were 347 female students from a university in J City. Data were collected using a self-report questionnaire for general characteristics, health-related characteristics, and current and preferred somatotype. Obesity stress was measured using 10 items developed by Cho (1996) based on Body Attitudes questionnaire (BAQ) of Ben-Tovim and Walker (1991). The survey was conducted from September 4 to September 7, 2007. Data were analyzed by t-test, ANOVA, Scheffe test, Spearman's rank correlation test, and stepwise multiple regression using SPSS 14.0. Results: The average score of obesity stress was $2.78{\pm}0.90$ out of 5.00. Stepwise multiple regression analysis showed that the major factors that affect obesity stress of female college students were perceived body shape, disagreement between current and preferred somatotype, history of weight control, body mass index (BMI), and perceived health status, and these factors explained 38.4% of obesity stress. Conclusion: Subjective judgment in the perception of or preference for body shape was the most important factor affecting obesity stress in female college students. Therefore, a plan is necessary to mitigate obesity stress and evaluate individually subjects who perceive themselves to be fat or want to be thinner than the current somatotype. And consultation and constant management are needed to help the high risk group (experience of weight control, BMI ${\geq}23kg/m^2$, not good health status).

• Tribology and Lubricants
• /
• v.15 no.1
• /
• pp.8-16
• /
• 1999

The electrorheological (ER) behavior of suspensions in silicone oil of phosphoric ester cellulose powder (average particle size : 18$\pm$1 ${\mu}{\textrm}{m}$) was investigated on the elevated temperature up to 10$0^{\circ}C$. For development of anhydrous ER fluids using at wide temperature range, it should be researched to how the effect of temperature on the ER activities. As a first step, the anhydrous ER suspensions mixing with the phosphoric ester cellulose particles which were made from the phosphoric ester reaction of cellulose were measured. As increasing the temperature, not only the analysis of electrical properties such as dielectric constant current density and electrical conductivity but also the rheological properties of ER fluids were studied. From the experimental results, the temperature had a large influence to the ER properties of anhydrous ER fluids. The current density, conductivity and elecoorheological effect ($\tau$$_{A}$$\tau$$_{0}$) of phosphoric ester cellulose ER fluids were proportional to the temperature with power law. And the shear stress of them was closely related with the square of dielectric constant mismatch parameter ($\beta$$^2$) under constant shear rate and electric field.d.

• Transactions of Materials Processing
• /
• v.22 no.8
• /
• pp.450-455
• /
• 2013

In the current study, a new dynamic recrystallization model for predicting high temperature flow stress is developed based on a physical model and the mean field theory. In the model, the grain aggregate is assumed as a representative volume element to describe dynamic recrystallization. The flow stress and microstructure during dynamic recrystallization were calculated using three sub-models for work hardening, for nucleation and for growth. In the case of work hardening, a single parameter dislocation density model was used to calculate change of dislocation density and stress in the grains. For modeling nucleation, the nucleation criterion developed was based on the grain boundary bulge mechanism and a constant nucleation rate was assumed. Conventional rate theory was used for describing growth. The flow stress behavior of pure copper was investigated using the model and compared with experimental findings. Simulated results by cellular automata were used for validating the model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.133-133
• /
• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).