• Proceedings of the KIEE Conference
• /
• 1990.07a
• /
• pp.215-220
• /
• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.543-546
• /
• 2004

Bias and frequency-dependent impedance is a technique for the investigation of complex conductivity. At low frequency, complex impedance is dominated by resistive component, and at high frequency by capacitive component. We are going to present the results of the bias and frequency-dependent complex impedance in the device structure of $ITO/Alq_3/Al$ in the temperature range between 10K and 300k. And we will show to change radius of Cole-Cole plot. It will be decrease resistance by temperature. Also equivalent electrical circuit and dielectric relaxation can be accomplished by using the complex impedance analysis.

• Korean Journal of Materials Research
• /
• v.34 no.5
• /
• pp.242-246
• /
• 2024

La modified lead zirconate titanate ceramics (Pb_0.92La_0.08)(Zr_0.95Ti_0.05)O₃ = PLZT-8/95/5 were prepared using the conventional solid state reaction method in order to investigate the complex impedance characteristics of the PLZT-8/95/5 ceramic according to temperature. The complex impedance in the PLZT-8/95/5 ceramic was measured over a temperature range of 30~550 ℃ at several frequencies. The complex dielectric constant anomaly of the phase transition was observed near T_U1 = 179 ℃ and T_U2 = 230 ℃. A remarkable diffuse dielectric constant anomalous behaviour of the complex dielectric constant was found between 100 ℃ and 550 ℃. The complex impedance spectra below and above T_U1 and T_U2 were fitted by the superposition of two Cole-Cole types of impedance relaxations. The fast component in the higher frequency region may be due to ion migration in the bulk, and the slow component in the lower frequency region is interpreted to be the formation and migration of ions at the grain boundary or electrode/crystal interfacial polarization.

• Korean Journal of Materials Research
• /
• v.32 no.4
• /
• pp.181-185
• /
• 2022

In this study, phase-pure titanium dioxide TiO₂ ceramics are sintered using standard high-temperature solid-state reaction technique at different temperatures (1,000, 1,100, 1,200, 1,300, 1,400 ℃). The effect of sintering temperature on the densification and impedance properties of TiO₂ ceramics is investigated. The bulk density and average grain size increase with the increase of sintering temperature. Impedance spectroscopy analysis (complex impedance Z^* and complex modulus M^*), performed in a broad frequency range from 100 Hz to 10 MHz, indicates that the TiO₂ ceramics are dielectrically heterogeneous, consisting of grains and grain boundaries. The complex impedance Z^* -plane indicates the resistance of grains of the TiO₂ ceramics increases with increasing sintering temperature, while that of grain boundaries develops in the opposing direction. The complex modulus M^*-plane shows a grain capacitance that seems to be independent of the sintering temperature, while that of the grain boundaries decreases with increasing sintering temperature. These results suggest that different sintering temperatures have effects on the microstructure, leading to changes in the impedance properties of TiO₂ ceramics.

• Corrosion Science and Technology
• /
• v.3 no.1
• /
• pp.1-5
• /
• 2004

A polarization resistance is generally used to estimate the corrosion rate in the corrosion monitoring by an electrochemical impedance method. When the Faradaic impedance has a time constant due to the reaction intermediate, the electrochemical impedance describes more than one loop on the complex plane. For example, the electrochemical impedance of iron in acidic solution shows capacitive and inductive loops on the complex plane. In this case, the charge transfer resistance and the polarization resistance are determined at middle and low frequency ranges, respectively. Which should be selected for corrosion resistance in corrosion monitoring, the charge transfer resistance or the polarization resistance'? In the present paper, the above-mentioned question is examined theoretically and experimentally.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.800-804
• /
• 1995

The complex permeability dispersions and the microwave absorbing phenomena are investigated in ferrite microwave absorber. The complex permeability of NiZn ferrite, NiZnCo ferrite, and Y-type hexagonal ferrite were measured in 200MHz-14GHz range. Two types of resonances, the domain wall and the spin rotational resonance, were observed. With a ferrite particle with a diameter of about $1\;\mu\textrm{m}$, only spin rotational resonance were observed. The theoretical matching frequency is determined by plotting the measured complex permeability locus on the impedance matching solution map. One or two impedance matching phenomena are observed in the ferrite absorbers according to their complex permeability loci on the impedance matching solution map. The first matching frequency, found in the ferrite-rubber composites, which was higher than that of spin rotational resonance, increased with spin rotational resonance frequency.

• 한국지구물리탐사학회:학술대회논문집
• /
• 2007.06a
• /
• pp.1-6
• /
• 2007

Two impedance imaging systems of multi-frequency electrical impedance tomography (MFEIT) and magnetic resonance electrical impedance tomography (MREIT) are described. MFEIT utilizes boundary measurements of current-voltage data at multiple frequencies to reconstruct cross-sectional images of a complex conductivity distribution (${\sigma}+i{\omega}{\varepsilon}$) inside the human body. The inverse problem in MFEIT is ill-posed due to the nonlinearity and low sensitivity between the boundary measurement and the complex conductivity. In MFEIT, we therefore focus on time- and frequency-difference imaging with a low spatial resolution and high temporal resolution. Multi-frequency time- and frequency-difference images in the frequency range of 10 Hz to 500 kHz are presented. In MREIT, we use an MRI scanner to measure an internal distribution of induced magnetic flux density subject to an injection current. This internal information enables us to reconstruct cross-sectional images of an internal conductivity distribution with a high spatial resolution. Conductivity image of a postmortem canine brain is presented and it shows a clear contrast between gray and white matters. Clinical applications for imaging the brain, breast, thorax, abdomen, and others are briefly discussed.

• Journal of the Korean Ceramic Society
• /
• v.33 no.10
• /
• pp.1073-1078
• /
• 1996

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.8 no.3
• /
• pp.15-26
• /
• 1971

The paper presents a new method for analyzing oscillation regions of transistor oscillators. In transistor feedback oscillators oscillation region appears as a circle in feedback impedance complex plane. When the resistive component of feedback impedance is fixed and the reactive component of feedback impedance is varied or vice versa, the locus of maximum negative output conductance becomes hyperbola. In transistor crystal oscillators oscillation region is determined by two circles which make real part and imaginary part of input impedance zero in load impedance complex plane. When the resistive compoment of load impedance is fixed and the reactive colnponent of load impedance is varied or vice versa, the loci of maximum or minimum resistive component of input impedance become straight lines.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.149-152
• /
• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.