• Title/Summary/Keyword: coercive field

Search Result 349, Processing Time 0.021 seconds

Dielectric properties of Eu-doped PZT thin films (Eu 첨가에 따른 PZT 박막의 유전 특성)

  • Son, Young-Hoon;Kim, Kyeong-Tae;Kim, Chang-Il;Chang, Eui-Goo;Lee, Byoung-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.11a
    • /
    • pp.155-158
    • /
    • 2002
  • Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.

  • PDF

Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80) 후막과 PZT(80/20) 박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-Gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
    • /
    • 2006.07b
    • /
    • pp.1243-1244
    • /
    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

  • PDF

Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3 Thin Films Deposited by Radio Frequency Magnetron Sputtering

  • Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
    • /
    • v.11 no.4
    • /
    • pp.182-185
    • /
    • 2010
  • $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

Inspection of Non-metallic Inclusions in Thin Steel Sheets Using Magnetic Flux Leakage Method (누설자속법을 이용한 박강판의 결함탐상)

  • 임종수;손대락
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.6
    • /
    • pp.302-309
    • /
    • 2000
  • An MFL (Magnetic Flux Leakage) testing system has been developed in order to inspect the non-metallic inclusions in the thin steel sheets. We have made a differential type flux-gate magnetometer using the measurement of apparent coercive field strength of soft magnetic core. The specifications of the electromagnet was determined using FEM software, and MFL testing system with 3 axis degree of freedom was constructed. The feasibility testing for non-metallic inclusion was shown using the system. By digitizing MFL signal and using 2-D graphic display, we could identify various surface defects other than the inclusions.

  • PDF

Fabrication and Characterizations of Thick PZT Films for Micro Piezoelectric Devices (마이크로 압전 소자용 후막 PZT의 제조 및 물성 평가)

  • 박준식;박광범;윤대원;박효덕;강성군;최태훈;이낙규;나경환
    • Transactions of Materials Processing
    • /
    • v.11 no.7
    • /
    • pp.569-574
    • /
    • 2002
  • Recently, thick PZT films are required for the cases of micro piezoelectric devices with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Microstructures, and electrical properties of films were investigated by XRD, FESEM, impedance analyzer, and P-E hysteresis. PZT films with 2.7$mu extrm{m}$ to 4.4${\mu}{\textrm}{m}$ thickness were fabricated. Dielectric constant, loss, remnant polarization and coercive field of them were 880~1650 at 1kHz, 2~3% at 1kHz, 26~32 $\mu$C/$ extrm{cm}^2$, and 33~60kV/cm, respectively. Also a transverse piezoelectric coefficient $(e_{31,f})$ measurement system was fabricated and tested for thick film samples.

High Frequency Magnetic Properties of Tensioned Amorphous Fe-B-Si Ribbon (장력 변화에 따른 Fe-B-Si 비정질 리본의 고주파 자기특성 변화)

  • Kim, K.U.;Min, B.K.;Song, J.S.;Kim, B.K.;Hwang, S.D.;Choi, H.S.
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1345-1347
    • /
    • 1994
  • High frequency Magnetic Properties of amorphous $Fe_{78}B_{13}Si_9$ ribbon were studied. Squareness ( Br/Bs ) and coercive force ( Hc ) of the specimen field annealed at $380^{\circ}C$ for 2 hrs are changed with the tension and the measuring frequency. So, we could optimise the tension having good magnetic properties at a certain frequency.

  • PDF

Dielectrical and Electrical Characteristics of 9/65/35 PLZT Thin Films (9/65/35 PLZT 박막의 유전적, 전기적 특성)

  • Kang, Chong-Yun;Choi, Hyung-Wook;Paik, Dong-Soo;Yun, Hyun-Sang;Shin, Hyun-Yong;Park, Chang-Yub
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1305-1307
    • /
    • 1994
  • 9/65/35 PLZT thin films were prepared by sol-gel processing and annealed by direct insertion, 9/65/35 PLZT thin films were poly-crystallized after direct insertion at $750^{\circ}C$ for 3omin. The grain size of film was 50 nm, coercive field was 28.2 kV/cm and remnant polarization was $3.68 {\mu}C/cm^2$.

  • PDF

The study on Dielectric and Strain Properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3-SrTiO_3$ Ceramics. ($Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3-SrTiO_3$ 세라믹의 유전 및 변위 특성에 관한 연구(II))

  • Lee, H.Y.;Lee, J.;Jung, H.D.;Paek, Y.C.;Lee, H.K.;Lee, D.C.
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1466-1468
    • /
    • 1994
  • In this paper Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics have been investigated as a function of the amount of $SrTiO_3(ST)$. The $SrTiO_3$ content is ranged from 0.01-0.06(wt%). As the amount of ST is increased, dielectric constant has a maximum value at 0.05 mol composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and ramnant polarization has a maximum value at 0.01mol composition.

  • PDF

Electrical Properties of PLZT Thin Films Prepared By Pulsed Laser Ablation (레이저 어블레이션법으로 제작된 PLZT 박막의 전기적특성)

  • 이도형;장낙원;마석범;최형욱;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.06a
    • /
    • pp.139-142
    • /
    • 1998
  • PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000${\AA}$. thickness were crystallized at 600$^{\circ}C$, 200 mTorr O$_2$ press. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$\_$r/=1500, and dielectric loss was 0.O$_3$. At 2/70/30 PLZT thin film, Coercive field and remnant polarization was respectively 19[kV/cm], 8[${\mu}$C/$\textrm{cm}^2$].

  • PDF

Ferroelectirc Properties of Sm-doped PZT Thin films (Sm이 첨가된 PZT 박막의 강유전 특성)

  • 손영훈;김경태;김창일;이병기;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.2
    • /
    • pp.178-183
    • /
    • 2004
  • PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.