• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.53-57
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• 2010

The influence of CaO addition on the crystallization temperature, crystal types, and microstructure of L-A-S ($Li_2O-Al_2O_3-SiO_2$) glass-ceramics system fabricated from a coal bottom ash, produced at thermal power plant, was studied. The glass transition and crystallization temperatures were shifted to the higher temperature position with increasing CaO content in a non-isothermal analysis using a DTA. The major crystalline phases of L-A-S glass-ceramics system produced were identified as ${\beta}$-spodumene ($LiAlSi_2O_6$) and eucryptite ($LiAlSiO_4$). The glass-ceramics showed a bulk and surface crystallization behavior at a time. With increasing CaO content, the ${\beta}$-spodumene peak in XRD increased and some CaO-related phases were formed. The surface crystal grown from the exterior to the center in glass-ceramics showed various shapes by amount of CaO added. Some cracks were generated at the glass-ceramics containing CaO above 9 wt% due to the mismatch of thermal expansion coefficients between a ${\beta}$-spodumene and CaO-related crystal phases.

• The Journal of Engineering Geology
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• v.33 no.4
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• pp.543-553
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• 2023

The current status of domestic a agalmatolite mines in South Korea was investigated with a view to establishing a stable supply of agalmatolite and managing its demand. Most mined agalmatolite deposits were formed through hydrothermal alteration of Mesozoic volcanic rocks. The physical characteristics of pyrophyllite, the main constituent mineral of agalmatolite, are as follows: specific gravity 2.65~2.90, hardness 1~2, density 1.60~1.80 g/cm³, refractoriness ≥29, and color white, gray, grayish white, grayish green, yellow, or yellowish green. Among the chemical components of domestic agalmatolite, SiO₂ and Al₂O₃ contents are respectively 58.2~67.2 and 23.1~28.8 wt.% for pyrophyllite, 49.2~72.6 and 16.5~31.0 wt.% for pyrophyllite + dickite, 45.1 and 23.3 wt.% for pyrophyllite + illite, 43.1~82.3 and 11.4~35.8 wt.% for illite, and 37.6~69.0 and 19.6~35.3 wt.% for dickite. Domestic agalmatolite mines are concentrated mainly in the southwest and southeast of the Korean Peninsula, with some occurring in the northeast. Twenty-one mines currently produce agalmatolite in South Korea, with reserves in the order of Jeonnam (45.6%) > Chungbuk (30.8%) > Gyeongnam (13.0%) > Gangwon (4.8%), and Gyeongbuk (4.8%). The top 10 agalmatolite-producing mines are in the order of the Central Resources Mine (37.9%) > Wando Mine (25.6%) > Naju Ceramic Mine (13.4%) > Cheongseok-Sajiwon Mine (5.4%) > Gyeongju Mine (5.0%) > Baekam Mine (5.0%) > Minkyung-Nohwado Mine (3.3%) > Bugok Mine (2.3%) > Jinhae Pylphin Mine (2.2%) > Bohae Mine. Agalmatolite has low thermal conductivity, thermal expansion, thermal deformation, and expansion coefficients, low bulk density, high heat and corrosion resistance, and high sterilization and insecticidal efficiency. Accordingly, it is used in fields such as refractory, ceramic, cement additive, sterilization, and insecticide manufacturing and in filling materials. Its scope of use is expanding to high-tech industries, such as water treatment ceramic membranes, diesel exhaust gas-reduction ceramic filters, glass fibers, and LCD panels.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.15 no.1
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• pp.26-34
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• 1982

The East China Sea and the Yellow Sea are abundant in nutritions because of river inflows and are important as the nursery and spawning grounds of demersal and pelagic fishes. The remarkable thermal front between the Yellow Sea Bottom Cold Water and the Tsushima Warm Current is formed in this region, and the fluctuation of this front may affect the variation of the yellow croaker fishing ground. To investigate the mechanism of the yellow croaker fishing ground, the distribution ana seasonal change of the fishing ground are examined by using catch of stow net fishery (Fisheries Research and Development Agency, 1970-1979) and the water temperature data (Japan Hydrographic Association, 1978). The main fishing ground of yellow croaker was nine sea areas (rectangle of 30' latitude by 30' longitude) located at 40-150 nautical miles west and southwest of Jeju Island, the area of which occupies no more than $11\%$ of all fishing grounds, and it appeared that about $70\%$ of total catch of ten years was concentrated in this area. The main fishing periods were from March to May and September to October. The coefficients of variation of the catch for the main fishing ground were from 0.8 to 2.1 and the condition of all fishing grounds was generally unstable. The mean CPUE was 27kg/haul at the main fishing ground, while it was the largest on boundary area of the Yellow Sea Bottom Cold Water. It was found that the seasonal movement of fishing ground is related to the expansion and reduction of the Yellow Sea Bottom Cold Water ($10^{\circ}C$).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.407-408
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• 2011

Natural boron consists of two stable isotopes 10B and 11B with natural abundance of 18.8 atom percent of 10B and 81.2 atom percent of 11B. The thermal neutron absorption cross-section for 10B and 11B are 3837 barn and 0.005 barn respectively. 10B enriched specific compounds are used for control rods and as a reactor coolant additives. In this work 2 methods for boron enrichment were analysed: 1) Gas irradiation in static conditions. Dissociation occurs due to multiphoton absorption by specific isotopes in appropriately tuned laser field. IR shifted laser pulses are usually used in combination with increasing the laser intensity also improves selectivity up to some degree. In order to prevent recombination of dissociated molecules BCl3 is mixed with H2S 2) SILARC method. Advantages of this method: a) Gas cooling is helpful to split and shrink boron isotopes absorption bands. In order to achieve better selectivity BCl3 gas has to be substantially rarefied (~0.01%-5%) in mixture with carrier gas. b) Laser intensity is lower than in the first method. Some preliminary calculations of dissociation and recombination with carrier gas molecules energetics for both methods will be demonstrated Boron separation in SILARC method can be represented as multistage process: 1) Mixture of BCl3 with carrier gas is putted in reservoir 2) Gas overcooling due to expansion through Laval nozzle 3) IR multiphoton absorption by gas irradiated by specifically tuned laser field with subsequent gradual gas condensation in outlet chamber It is planned to develop software which includes these stages. This software will rely on the following available software based on quantum molecular dynamics in external quantized field: 1) WavePacket: Each particle is treated semiclassicaly based on Wigner transform method 2) Turbomole: It is based on local density methods like density of functional methods (DFT) and its improvement- coupled clusters approach (CC) to take into account quantum correlation. These models will be used to extract information concerning kinetic coefficients, and their dependence on applied external field. Information on radiative corrections to equation of state induced by laser field which take into account possible phase transition (or crossover?) can be also revealed. This mixed phase equation of state with quantum corrections will be further used in hydrodynamical simulations. Moreover results of these hydrodynamical simulations can be compared with results of CFD calculations. The first reasonable question to ask before starting the CFD simulations is whether turbulent effects are significant or not, and how to model turbulence? The questions of laser beam parameters and outlet chamber geometry which are most optimal to make all gas volume irradiated is also discussed. Relationship between enrichment factor and stagnation pressure and temperature based on experimental data is also reported.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.334-339
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• 2004

Microstructures and mechanical properties of SPSed monolithic HAp, HAp-Ag, and HAp-ZrO$_2$sintered bodies were investigated by the XRD, SEM, and TEM techniques. The nano-sized HAp powders were successfully synthesized by precipitation of Ca(NO$_3$)$_2$4$H_2O$ and (NH$_4$)HPO$_4$solution. In the HAp-Ag composite, the shrinkage cavities were observed at the interfaces between HAp and large sized Ag particles due to the mismatch of their thermal expansion coefficients. However, no found the defect at the interfaces between HAp and fine-sized Ag particles. In the HAp-ZrO$_2$composite. nano-sized ZrO$_2$particles were almost dispersed at the grain boundaries of HAp phase. The fracture toughness of HAp-Ag and HAp-ZrO$_2$ composites were increased due to the plastic deformation and phase transformation mechanisms of the dispersed fine Ag and ZrO$_2$phase in the HAp matrix, respectively.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Journal of the Korean Geotechnical Society
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• v.20 no.3
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• pp.23-31
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• 2004

Normally, coating is used for protecting reinforced concrete. For this purpose, both organic and inorganic coatings are used. The advantages of inorganic coatings are lower absorption of UV, non-burning etc. On the other hand, organic coatings have the advantage of low permeability of $CO_2, SO_2$ and water. Organic coatings provide better protection for reinforced concrete. However, organic coatings such as epoxy, urethane and acryl reduce long-term adhesive strength by the difference of their thermal expansion coefficients and elastic modules from those of concrete, and the formed coating cover of these is blistered by poor breathing. Also, when organic coatings are applied to the wet surface of concrete, they have a problem with adhesion. In this study, a new coating material for protecting concrete was hybridized with polymer and ceramics. And tests were carried out on its physical and durable characteristics, and safety characteristic on elution. All results were compared with organic coating materials and epoxies and showed that the performance of the developed coating material was not inferior to that of other organic coatings in protecting concrete. On the other hand, safety characteristic on elution was superior to epoxies which were used in this study. So, the developed coating material was considered as a suitable protecting coating material which have advantages of inorganic and organic coatings for protecting underground concrete structures, especially in contact with water.