• Title/Summary/Keyword: coating properties

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A Study on the Electrical Properties of Thin Film Type Humidity Sensor (박막형 습도센서의 전기적 특성에 대한 연구)

  • You, Do-Hyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.6
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    • pp.1012-1016
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    • 2008
  • [ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

Fabrication and Operating Properties of Nb Silicide-coated Si-tip Field Emitter Arrays (니오비움 실리사이드가 코팅된 실리콘 팁 전계 방출 소자의 제조 및 동작 특성)

  • Ju, Byeong-Kwon;Park, Jae-Seok;Lee, Sangjo;Kim, Hoon;Lee, Yun-Hi;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.7
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    • pp.521-524
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    • 1999
  • Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

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Properties of Blocking Layer with Ag Nano Powder in a Dye Sensitized Solar Cell

  • Noh, Yunyoung;Kim, Kwangbae;Choi, Minkyoung;Song, Ohsung
    • Journal of the Korean Ceramic Society
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    • v.53 no.1
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    • pp.105-109
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    • 2016
  • We prepared a working electrode (WE) with a blocking layer (BL) containing 0 ~ 0.5 wt% Ag nano powders to improve the energy conversion efficiency (ECE) of dye sensitized solar cell (DSSC). FESEM and micro-Raman were used to characterize the microstructure and phase. UV-VIS-NIR spectroscopy was employed to determine the adsorption of the WE with Ag nano powders. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with Ag nano powders. From the results of the microstructural analysis, we confirmed that Ag nano powders with particle size of less than 150 nm were dispersed uniformly on the BL. Based on the phase and adsorption analysis, we identified the existence of Ag and found that the adsorption increased when the amount of Ag increased. The photovoltaic results show that the ECE became 4.80% with 0.3 wt%-Ag addition compared to 4.31% without Ag addition. This improvement was due to the increase of the localized surface plasmon resonance (LSPR) of the BL resulting from the addition of Ag. Our results imply that we might be able to improve the efficiency of a DSSC by proper addition of Ag nano powder to the BL.

Effect of the Fish Oil Fortified Chitosan Edible Film on Microbiological, Chemical Composition and Sensory Properties of Göbek Kashar Cheese during Ripening Time

  • Yangilar, Filiz
    • Food Science of Animal Resources
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    • v.36 no.3
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    • pp.377-388
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    • 2016
  • Objective of the present study is to investigate the effect of coated edible films with chitosan solutions enriched with essential oil (EO) on the chemical, microbial and sensory properties of Kashar cheese during ripening time. Generally, no differences were found in total aerobic mesophilic bacteria, streptococci and lactoccocci counts among cheeses but these microorganism counts increased during 60 and 90 d storage especially in C1 (uncoated sample) as compared with coated samples. Antimicrobial effectiveness of the films against moulds was measured on 30, 60, and 90 d of storage. In addition of fish EO into chitosan edible films samples were showed to affect significantly decreased the moulds (p<0.05) as 1.15 Log CFU/g in C4 (with fish oil (1% w/v) fortified chitosan film) on the 90th d, while in C1 as 3.89 Log CFU/g on the 90th d of ripening. Compared to other cheese samples, C2 (coated with chitosan film) and C4 coated cheese samples revealed higher levels of water-soluble nitrogen and ripening index at the end of storage. C2 coated cheese samples were preferred more by the panellists while C4 coated cheese samples received the lowest scores.

Structural and Electrical Features of Solution-Processed Li-doped ZnO Thin Film Transistor Post-Treated by Ambient Conditions

  • Kang, Tae-Sung;Koo, Jay-Hyun;Kim, Tae-Yoon;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.242-242
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    • 2012
  • Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

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The Effect of Low-Temperature Carbon Encapsulation on Si Nanoparticles for Lithium Rechargeable Batteries

  • Jung, Jaepyeong;Song, Kyeongse;Kang, Yong-Mook
    • Bulletin of the Korean Chemical Society
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    • v.34 no.7
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    • pp.2162-2166
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    • 2013
  • The tailored surface modification of electrode materials is crucial to realize the wanted electronic and electrochemical properties. In this regard, a dexterous carbon encapsulation technique can be one of the most essential preparation methods for the electrode materials for lithium rechargeable batteries. For this purpose, DL-malic acid ($C_4H_6O_5$) was here used as the carbon source enabling an amorphous carbon layer to be formed on the surface of Si nanoparticles at enough low temperature to maintain their own physical or chemical properties. Various structural characterizations proved that the bulk structure of Si doesn't undergo any discernible change except for the evolution of C-C bond attributed to the formed carbon layer on the surface of Si. The improved electrochemical performance of the carbon-encapsulated Si compared to Si can be attributed to the enhanced electrical conductivity by the surface carbon layer as well as its role as a buffering agent to absorb the volume expansion of Si during lithiation and delithiation.

Synthesis of conducting and magnetic nanocomposite of cross-linked aniline sulfide resin

  • Hosseini, Seyed Hossein
    • Advances in materials Research
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    • v.3 no.4
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    • pp.233-242
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    • 2014
  • Magnetic and conducting aniline sulfide resin cross-linked (ASC-Fe3O4) nanocomposite has been prepared in the presence of aniline sulfide resin (ASR), aniline, $Fe_3O_4$ coated by polyethylene glycol (PEG) and initiator. The magnetic properties of the resulting composites showed ferromagnetic behavior, such as high-saturated magnetization (Ms= 41 emu/g), and coercive force (Hc=1.5 Oe). The saturated magnetization was increased by increasing of $Fe_3O_4$ content and decreased by increasing aniline ratio. The transmission electron micrograph (TEM) and X-ray diffraction proved that nanometer-sized about 20-30 nm $Fe_3O_4$ in the composite. The average size of ASC-$Fe_3O_4$ nanocomposite with core-shell structure was about 50-60 nm, and polydisperse. This approach may also be extended to the synthesis and modification of other polymers. Electrical conductivity of aniline sulfide resin cross-linked (ASC) nanocomposite has been studied by four-point probe method and produced $3.3{\times}10^{-4}S/cm$ conductivity for it. The conductivity of the composites at room temperature depended on the $Fe_3O_4$, aniline ratio and doping degree. The thermogravimetry analysis (TGA) results showed that this resin is thermal resistance near of $500^{\circ}C$. So, It can be used for resistance thermal coating for military applications. $Fe_3O_4$-PASC nanocomposite has been flexible structure with electrical and magnetic properties.

The Subjective Evaluation on White Light Property and Color Appearance of Single Chip LED and RGB Multi Chip LED (단일칩 LED와 RGB 멀티칩 LED의 백색광 특성 및 색 보임에 대한 주관평가 연구)

  • Sim, Yun-Ju;Kim, In-Tae;Choi, An-Seop
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.1
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    • pp.1-8
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    • 2015
  • To produce the white light, there are a single chip method using the blue light and phosphor coating, a multi chip method by mixing R, G, B light.. Multi chip method is proper for the smart lighting system by controling color and color temperature. And color rendering of single chip LED is good by even spectral distribution. To apply application technic like smart light system, this paper analyzed the properties of single chip LED and RGB multi chip LED, and implemented the 2 part subject evaluation for single chip LED and RGB multi chip LED. The first part is comparison of properties for single chip LED and RGB multi chip and second part is color appearance evaluation of 8 colors in each lighting environment.

Electrical properties of $Pb(Zr_xTi_{1-x})O_3$ferroelectric thin films prepared by sol-gel processing (Sol-gel법에 의한 $Pb(Zr_xTi_{1-x})O_3$ 강유전 박막의 전기특성)

  • 백동수;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.2
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    • pp.132-137
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    • 1996
  • Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

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Crystal growth and optical properties with preheating temperature of sol-gel derived ZnO thin films

  • Kim, Young-Sung;Lee, Choong-Sun;Kim, Ik-Joo;Ko, Hyung-Duk;Tai, Weon-Pil;Song, Yong-Jin;Suh, Su-Jeung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.187-192
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    • 2004
  • We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.