• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.59-68
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• 2003

Zinc phosphating for cold forming of steel was studied with emphasis on decreasing phosphating temperature. To lower phosphating temperature, some techniques, such as adding Cu ion into bath, using activator in the form of pre-dip, and aeration in bath, instead of using conventional accelerator, namely oxidizing agent, have been tried. It was revealed that phosphating, leading to coatings of improved uniformity and fine crystal size, can be carried out using above techniques at lower temperature (55$^{\circ}C$) compared to conventional phosphating temperature ($80∼90^{\circ}C$). Under present condition, it was seen that optimum concentrations of Cu ion in phosphating bath and activator in pre-dip are 0.015 % (w/w) and 2.0 g/1, respectively. The coating weight was within the range of $\15∼20 g/m^2$. When lubricant was applied into phosphating coatings, the amount of lubricating component (total soap) was found to be$ 6∼10 g/\m^2$ and the lubricated panel revealed excellent lubricating properties.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1705-1706
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.64-66
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• 2004

$Pb(Zr_{0.3},Ti_{0.7})O_3$, $Pb(Zr_{0.3},Ti_{0.3})O_3$ powders were prepared by the sol-gel method and PZT heterolayered thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ration were studied. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around $864^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The PZT heterolayered thick film sintered at $1050^{\circ}C$ for 10min showed the average grain size $1{\sim}1.4{\mu}m$. The average thickness of PZT heterolayered thick films, obained by $3{\sim}6times$ of screen-printing, was approximately $60{\sim}110{\mu}m$.

• Applied Microscopy
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• v.46 no.4
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• pp.227-237
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• 2016

This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

• Journal of Powder Materials
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• v.17 no.6
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• pp.489-493
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• 2010

Nickel-based and iron-based alloys have been developed and commercialized for a wide range of high performance applications at severely corrosive and high temperature environment. This alloy foam has an outstanding performance which is predestinated for diesel particulate filters, heat exchangers, and catalyst support, noise absorbers, battery, fuel cell, and flame distributers in burners in chemical and automotive industry. Production of alloy foam starts from high-tech coating technology and heat treatment of transient liquid-phase sintering in the high temperature. These technology allow for preparation of a wide variety of foam compositions such as Ni, Cr, Al, Fe on various pore size of pure nickel foam or iron foam in order for tailoring material properties to a specific application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.75-76
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• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.125-125
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• 2015

Ti-Al-Cr-N thin layer was prepared on Fe-Si thin sheet by arc ion plating to improve corrosion and mechanical properties. The compositions ratios of Fe : Cr : Al : Ti : Si : N of the thin layers at $500^{\circ}C$ was 1.24 : 0.56 : 36.82 : 32.72 : 0.59 : 28.07 [wt.%], respectively. The higher arc ion plating temperature was, the higher corrosion resistance and nano-hardness were observed due to chromium content. Corrosion potential and corrosion rate in artificial sea water of the coating layer were in the range of $-39mV_{SHE}$ and $2mA/cm^2$, respectively. Passivity was not observed in the artificial sea water. Nano-hardnesses of the thin layers was increased by adding Cr from 23.6 to 25.8 [GPa]. The friction coefficients and fatigue limits of the layers were 0.388, 0.031, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.