• Journal of the Korean Ceramic Society
• /
• v.53 no.1
• /
• pp.81-86
• /
• 2016

The effect of substrate rotation speed on the phase forming behavior and microstructural variation of 8 wt% yttria ($Y_2O_3$) stabilized $ZrO_2$ (8YSZ) coatings as a thermal barrier coating has been investigated. 8YSZ coatings with $100{\sim}200{\mu}m$ thickness were deposited by electron beam-physical vapor deposition onto a super alloy (Ni-Cr-Co-Al) substrate with a bond coating (NiCo-CrAlY). The width of the columnar grains of the 8YSZ coatings increased with increasing substrate rotation speed from 1 to 30 rpm at a substrate temperature range of $900{\sim}950^{\circ}C$. In spite of the different growth behaviors of coatings with different substrate rotation speeds, the phases of each coating were not changed remarkably. Even after post heat treatments with various conditions of the coated specimens fabricated at 20 rpm, only a change of color was noticeable, without any remarkable change in the phase or microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05d
• /
• pp.72-76
• /
• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Journal of Welding and Joining
• /
• v.11 no.4
• /
• pp.70-78
• /
• 1993

An attempt was made to investigate the effect of brazing time on microstructure, microhardness, and corrosion of Zircaloy -4as well as the beryllium diffusion into its sheet. The sheets were coated with beryllium and brazed at $1020^{\circ}C$ for 20-40 minutes in $2{\times}10^{-5}$ torr vacuum atmosphere. 1. Microstructurally the brazed zone was largely divided into three regions: a region of continuous or partially formed of eutectic liquid films along grain boundaries; a region of precipitation in both grains and grain boundaries; a region of elongated wide structure of .alpha.-laths, which was not affected by beryllium. 2. Due to the precipitates, the beryllium-migrated region was hardened and the width of the hardened region increased with increasing brazing time. 3. Beryllium brazed Zircaloy -4 sheets showed a higher corrosion rate than those of as-received and heat-treated at a brazing temperature. 4. Diffusion coefficient of beryllium into Zircaloy -4 at $1020^{\circ}C$ for 30 minutes was $7.67{\times}10^{-7}cm^2/sec.$ It seemed that Be penetrated Zircaloy -4 by forming eutectic liquid films along grain boundaries in the proximity of Be/Zr interface and it, thereafter, diffused into Zircaloy mainly by interstitial solid solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.589-592
• /
• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Progress in Superconductivity
• /
• v.5 no.2
• /
• pp.132-135
• /
• 2004

We fabricated YBCO thick films by using a screen printing method with $Y_2$BaCuO$_{5}$(Y211) and BaCO$_3$ powders on Cu-substrate in $N_2$ atmosphere. Cu-sheathed YBCO thick film process is more simple and economic than YBCO coated conductor methods. The heat treatment is performed in the range of 860 - 875 $^{\circ}C$ for 5 min in the tube furnace of $N_2$ atmosphere. The flow rate of $N_2$ gas is fixed 60 $m\ell$/min. Microstructure and phases of thick films were investigated by optical microscope, X-ray diffraction(XRD) and SEM. At heat-treatment temperature, the thick films were partially melted by liquid reaction between CuO of oxidized copper substrate and the powders screen-printed on Cu-sheath. During the heat-treatment procedure, YBCO superconducting grains nucleate.e.

• Journal of the Korean Ceramic Society
• /
• v.32 no.8
• /
• pp.909-914
• /
• 1995

From alumina powder and TEOS, $\alpha$-Al2O3/SiO2 composite powder for reaction-sintered mullite was synthesized by heterogeneous coagulation and surface coating, and investigated the mullitization reaction and sintering behavor of these powders. In $\alpha$-Al2O3/SiO2 composite powder prepared by heterogeneous coagulation, each alumina particles were surrounded by silica particles of 50~60 nm in size. And the alumina particles in composite powder prepared by surface coating were coated by uniform silica layer with thickness of 50 nm. In both methods, mullitization reaction was completed at 1$650^{\circ}C$ for 3h, and specimen sintered above 145$0^{\circ}C$ was about 95% fo the theoretical relative density. Mullite grains formed from the reaction with composite powders showed spherical shape with a size of 1~2${\mu}{\textrm}{m}$.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.291-293
• /
• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1533-1535
• /
• 2002

Carbon nanotubes (CNTs) were grown with high density on a large area of Ni-coated silicon oxide substrates by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) of $C_2H_2$ at temperatures ranging from 600 to $700^{\circ}C$. The Ni catalyst was formed using an RF magnetron sputtering system with varying the operating pressure and exposure time of $NH_3$ plasma. The surface morphology of nickel catalyst films and CNTs was examined by SEM and AFM. The graphitized structure of CNTs was confirmed by Ramman spectra, SEM, and TEM. The growth of CNTs was observed to be strongly influenced by the surface morphology of Ni catalyst, which depended on the pre-treatment time and growth temperature. Dense CNTs with uniform-sized grains were successfully grown by ICP-CVD.

• Korean Journal of Materials Research
• /
• v.18 no.5
• /
• pp.259-265
• /
• 2008

The corrosion and degradation factors of a current collector in a molten carbonate fuel cell (MCFC) were investigated to determine the optimized coating thickness of nickel on STS316L. The results show that the surface morphology and electrical properties depended on the nickel coating thickness. The surface morphology gradually changed from a flat to a porous structure along as the nickel coating thickness decreased, and the electrical resistance of the nickel-coated STS316L increased as the nickel coating thickness decreased. This can be attributed to the diffusion of elements of Fe and Cr from the substrate through the nickel grain boundaries. Additionally, carburization in the metal grains or grain boundaries in an anodic environment was found to influence the electrical properties due to matrix distortion. The resistance of Cr-oxide layers formed in an anodic environment causes a drop in the potential, resulting in a decrease in the system efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04b
• /
• pp.3-5
• /
• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.