• Journal of the Korean Ceramic Society
• /
• v.39 no.9
• /
• pp.829-834
• /
• 2002

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.255-260
• /
• 2006

The basic composition of Ni-Zn ferrite was $(Ni_{0.35}Cu_{0.2}Zn_{0.45})_{1.02}(Fe_2O_3)_{0.98}$ (group A) and $(Ni_{0.4}Cu_{0.2}Zn_{0.4})_{1.02}(Fe_2O_3)_{0.98}$(group B) with additional 0.1 mol% $CaCO_3$ and 0.03 mol% $V_2O_5$. For high permeability and acceleration of grain growth, $CaCO_3$ and $V_2O_5$ was added. The mixture of the law materials was calcinated at $600^{\circ}C$ for 2 hours and then milled. The compacts of toroidal type were sintered at different temperature ($1,050^{\circ}C,\;1,070^{\circ}C,\;1,100^{\circ}C$) for 2 hours in air followed by an air cooling. Then, effects of various composition and sintering temperatures on the microstructure and physical properties such as density, resistivity, magnetic induction, coercive force, initial permeability, quality factor, and curie temperature of the Ni-Zn ferrite were investigated. The density of the Ni-Zn ferrite was $4.90{\sim}5.10g/cm^3$, resistivity revealed $10^8{\sim}10^{12}{\Omega}-cm$. The average grain size increased with the increase of sintering temperatures. The magnetic properties obtained from the aforementioned Ni-Zn ferrite specimens were 4,000 gauss for the maximum induction, 0.25 oersted for the coercive force, 2,997 for the initial permeability, 208 for the quality factor, and $202^{\circ}C$ for the curie temperature. The physical properties indicated that the specimens could be utilized as the core of microwave communication and high permeability deflection yoke of high permeability.

• Korean Journal of Materials Research
• /
• v.5 no.8
• /
• pp.1013-1019
• /
• 1995

The thin plate of Co-Ni-P was deposited on the polyester film by the electroless plating method. Through present experiments, deposition rates and metal compositions of the plates were determined according to compositions of solution, pH and temperature. Also, magnetic properties of plates were examined according to metal compositions. Considering magnetic properties and deposition rates of electroless plating, the best condition was obtained as pH of 8.5 and 90℃. It was observed that metal compositions were evidently varied by the pH of solutions and the concentration of complex agents. However. they were not affected by other factors. At the optimum condition, the composition of the plate was Co(78%), Ni(16%), and P(6%). Also, it was found that the coercive force was 370 Oe, and squareness was 0.65 at this condition. Magnetic properties (hard or soft) of thin plates were determined by metal compositions. Therefore. the plate became soft magnetic plate as the composition of nickel increased over 30 per cents. The crystal structure of the soft magnetic plate was found to be amorphous in which it was strongly oriented to the (111)phahe of nickel. On the ohter hand, the hard magnetic place was found to be hcp crystalline of α-cobalt which was oriented to the (101)phase of cobalt and the (100)phase of cobalt.

• Korean Journal of Materials Research
• /
• v.3 no.5
• /
• pp.497-504
• /
• 1993

Effects of $Ta_2O_5,ZrO_2$ and $SiO_2$ addition on magnetic properties of 0.02wt%$Bi_2O_3$ and 0 . 0 5 wt%$CaCO_3$ doped Mn-Zn ferrites(58.5mol% $Fe_2O_3$, 25.5 mol% ZnO) were investigated. E:lectrlcal resistivity and magnetic properties such as the initial permeability($\mu_i$), loss factor(tan$\delta$), coercive force Hc(m0c) were measured. With lncreasing $Ta_2O_5$ and $ZrO_2$ addition, the following effects were observed: I ) Decreasing of the average grain size; 2) lncreasing of the electrical resistivity and initial permeability; 3) Ilecreasmg of loss factor values. (very low loss esprcially at high frequency region) ; 4 ) Fine and uniform microsrructures were obtamed at O.lwt% nddecl samples. In case of $SiO_2$ addition, anomalous grain growth and degradation of magnetic properties were observed. The obtained maximum initial permeability value was 6260 at IOkHz. $25^{\circ}C$ from 0.02wt%$Bi_2O_3$. 0.05wt%$CaCO_3$, 0.lwt%$Ta_2O_5$ added sample, the corresponded relative loss factor (tan$\delta /\mu_i$)for the sample was $4.2 \times 10^{-6}$.

• Journal of the Korean Magnetics Society
• /
• v.5 no.4
• /
• pp.269-274
• /
• 1995

The basic composition of Mn-Zn ferrite was $Mn_{0.631}Zn_{0.316}Fe_{2.053}O_{4}$(specimen A), $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) and $Mn_{0.538}Zn_{0.308}Fe_{2.154}O_{4}$(specimen C) with additional 0.1 mol % $CaCo_{3}$ and 0.04 mol % $V_{2}O_{5}$. For high per¬meability and acceleration of grain growth, $CaCo_{3}$ and $V_{2}O_{5}$. was added. The mixture of the law materials was calcinated at $950^{\circ}C$ for 3 hours and then milled. The compacts of toroidal type were sintered at different temperature($1250^{\circ}C$, $1300^{\circ}C$, $1350^{\circ}C$) for 2 hours in $N_2$ atmosphere. The effects of the various raw material composition and sintered temperature on the physical properties of Mn-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from SEM was from $18\;\mu\textrm{m}\;to\;23\;\mu\textrm{m}$. As the sintering temperature was increased from $1250^{\circ}C$ to $1350^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen Their values were about 0.45 Oe and $200^{\circ}C$. The frequency of specimen will used in the range from 200 kHz to 2 MHz. The basic composition of $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) sintered at $1300^{\circ}C$ shows the best results at magnetic induction (Br & Bm).

• Journal of the Korean Magnetics Society
• /
• v.12 no.5
• /
• pp.189-194
• /
• 2002

Microstructure and magnetic properties of Sm-Co sintered magnet were investigated with the variation of Zr content and their solution treatment and aging temperatures. The fraction of eutectic structure and the size of eutectic area decreased with increasing x value of cast Sm(C $O_{.688-x}$F $e_{.242}$C $u_{.07}$Z $r_{x}$)$_{7.404}$ alloys. On the other hand, x=0.022 ingot had finer dendritic structure compared to the other alloys. The sintered magnet of Sm(C $O_{.688-x}$F $e_{.242}$C $u_{.07}$Z $r_{x}$)$_{7.404}$ had well defined cell structure which is composed of cell boundary Sm $Co_{5}$ and cell interior S $m_2$Co/ssub 17/ phase. Cell boundary Sm $Co_{5}$ phase has 20nm thickness and its relative angle was 120$^{\circ}$ in x=0.018 and 0.022 alloys. Cell size was decreased with increasing Zr contents. But, x=0.026 alloy has diffuse cell boundary and irregular shape compared to x=0.022 and 0.018 alloys. Maximum value of coercive force and maximum energy Product were obtained from x=0.022 alloys. Optimum solution treatment temperature of Sm(C $O_{.688-x}$F $e_{.242}$C $u_{.07}$Z $r_{x}$)$_{7.404}$ alloy was 1170 $^{\circ}C$ and 1st aging temperature of two step aging process for higher coercivity was 850 $^{\circ}C$.

• Journal of the Korean Vacuum Society
• /
• v.7 no.1
• /
• pp.17-23
• /
• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of Sensor Science and Technology
• /
• v.11 no.1
• /
• pp.48-53
• /
• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Korean Journal of Materials Research
• /
• v.12 no.6
• /
• pp.464-469
• /
• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.6
• /
• pp.272-278
• /
• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.