• Title/Summary/Keyword: circuit

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Study on Fraud and SIM Box Fraud Detection Method in VoIP Networks (VoIP 네트워크 내의 Fraud와 SIM Box Fraud 검출 방법에 대한 연구)

  • Lee, Jung-won;Eom, Jong-hoon;Park, Ta-hum;Kim, Sung-ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.10
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    • pp.1994-2005
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    • 2015
  • Voice over IP (VoIP) is a technology for the delivery of voice communications and multimedia sessions over Internet Protocol (IP) networks. Instead of being transmitted over a circuit-switched network, however, the digital information is packetized, and transmission occurs in the form of IP packets over a packet-switched network which consist of several layers of computers. VoIP Service that used the various techniques has many advantages such as a voice Service, multimedia and additional service with cheap cost and so on. But the various frauds arises using VoIP because VoIP has the existing vulnerabilities at the Internet and based on complex technologies, which in turn, involve different components, protocols, and interfaces. According to research results, during in 2012, 46 % of fraud calls being made in VoIP. The revenue loss is considerable by fraud call. Among we will analyze for Toll Bypass Fraud by the SIM Box that occurs mainly on the international call, and propose the measures that can detect. Typically, proposed solutions to detect Toll Bypass fraud used DPI(Deep Packet Inspection) based on a variety of detection methods that using the Signature or statistical information, but Fraudster has used a number of countermeasures to avoid it as well. Particularly a Fraudster used countermeasure that encrypt VoIP Call Setup/Termination of SIP Signal or voice and both. This paper proposes the solution that is identifying equipment of Toll Bypass fraud using those countermeasures. Through feature of Voice traffic analysis, to detect involved equipment, and those behavior analysis to identifying SIM Box or Service Sever of VoIP Service Providers.

Recovery of Precious Metals from Waste PCB and Auto Catalyst Using Arc Furnace (귀금속 함유 폐기물로부터 아크로를 이용한 유가금속 회수)

  • Ban Bong-Chan;Kim Chang-Min;Kim Young-Im;Kim Dong-Sn
    • Resources Recycling
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    • v.11 no.6
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    • pp.3-11
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    • 2002
  • Recently, waste printed circuit board (PCB) has significantly increased in its amount due to the rapid development of electronic industries. Since several kinds of noxious materials and also valuable metals are contained in it, the waste PCB is in an urgent need of recycling for the dual purposes for the prevention of environmental pollution and recovery of valuable resources. Also, the catalyst which equipped in the exhaust pipes of automobiles to reduce emission of air pollutants contains precious met-als so that their recovery from the waste auto-catalysts is required. In this study, the recovery of valuable metals from waste PCB and auto-catalyst by arc furnace melting process has been investigated, which is known to be very stable and suitable f3r less production of pollutants due to its high operating temperature. The effect of the kind of flux on the recovery of precious metals was examined by using quicklime, converter slag, and copper slag as the flux. In addition, the influence of direct and alternating current and the applying direction of direct current has been investigated. It was observed that using converter or copper slag as a flux was more desirable for a higher efficiency in the precious metal recovery compared with quicklime. For the effect of current, application of direct current taking the bottom as a negative pole generally showed a better efficiency for the extraction of valuable metals from waste PCB, which was also observed for the case of waste auto-catalyst. The average recovery of precious metals from both wastes by arc furnace melting process was very high, which was up to in the range of 95~97%.

Growth of $CuInSe_2$ single crystal thin film for solar cell development and its solar cell application (태양 전지용 $CuInSe_2$ 단결정 박막 성장과 태양 전지로의 응용)

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Journal of the Korean Solar Energy Society
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    • v.25 no.4
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    • pp.1-11
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    • 2005
  • The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

The Fabrication of Poly-Si Solar Cells for Low Cost Power Utillity (저가 지상전력을 위한 다결정 실리콘 태양전지 제작)

  • Kim, S.S.;Lim, D.G.;Shim, K.S.;Lee, J.H.;Kim, H.W.;Yi, J.
    • Solar Energy
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    • v.17 no.4
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    • pp.3-11
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    • 1997
  • Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

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Growth of CaAl2Se4: Co Single Crystal Thin Film for Solar Cell Development and Its Solar Cell Application (태양 전지용 CaAl2Se4: Co 단결정 박막 성장과 태양 전지로의 응용)

  • Bang, Jin-Ju;Hong, Kwang-Joon
    • Journal of the Korean Solar Energy Society
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    • v.38 no.1
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    • pp.25-36
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    • 2018
  • The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

New Implementation Method of the Pulsed Nuclear Magnetic Resonance Apparatus (펄스방식의 핵자기 공명장치에 관한 새로운 구현방법)

  • 김청월
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.10
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    • pp.1-11
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    • 1998
  • This paper presents a new implementation method of the pulsed NMR(nuclear magnetic resonance) apparatus, which contains a single coil in a magnet console, to detect a NMR signal. Applying an RF magnetic field of 5MHz to the magnet console which is designed to have Larmor frequency of 5MHz for hydrogen atom, the hydrogen NMR signal was obtained from the glycerin which was put in the magnet console as a sample. The DC magnetic field in the magnet console was implemented with a permanent magnet of 1168 gauss and the RF magnetic field was generated appling an RF signal with the frequency of 5MHz and the current magnitude of 8A to a coil of 5.73${\mu}$H. The magnitude of the NMR signal was maximum when the RF magnetic field was generated for 2.8 ${\mu}$sec, and the period of generating the RF magnetic field was designed to 100msec for detecting the NMR signal repeatedly. The NMR signal, radiated from the sample in the magnetic console, was appeared as an amplitude-modulated signal with a frequency equal to the Larmor frequency. The signal, induced in the coil, was amplified in the tx/rx separation circuit, preamplifier and intermediate amplifier by a factor of 20.7dB, 36dB and 40dB, respectively, and the signal was detected by a synchronous detection circuits, then the NMR signal was obtained.

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Three Dimensional Implementation of Intelligent Transportation System Radio Frequency Module Packages with Pad Area Array (PAA(Pad Area Array)을 이용한 ITS RF 모듈의 3차원적 패키지 구현)

  • Jee, Yong;Park, Sung-Joo;Kim, Dong-Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.1
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    • pp.13-22
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    • 2001
  • This paper presents three dimensional structure of RF packages and the improvement effect of its electrical characteristics when implementing RF transceivers. We divided RF modules into several subunits following each subunit function based on the partitioning algorithm which suggests a method of three dimension stacking interconnection, PAA(pad area array) interconnection and stacking of three dimensional RF package structures. 224MHz ITS(Intelligent Transportation System) RF module subdivided into subunits of functional blocks of a receiver(RX), a transmitter(TX), a phase locked loop(PLL) and power(PWR) unit, simultaneously meeting the requirements of impedance characteristic and system stability. Each sub­functional unit has its own frequency region of 224MHz, 21.4MHz, and 450KHz~DC. The signal gain of receiver and transmitter unit showed 18.9㏈, 23.9㏈. PLL and PWR modules also provided stable phase locking, constant voltages which agree with design specifications and maximize their characteristics. The RF module of three dimension stacking structure showed $48cm^3$, 76.9% reduction in volume and 4.8cm, 28.4% in net length, 41.8$^{\circ}C$, 37% in maximum operating temperature, respectively. We have found that three dimensional PAA package structure is able to produce high speed, high density, low power characteristics and to improve its functional characteristics by subdividing RF modules according to the subunit function and the operating frequency, and the features of physical volume, electrical characteristics, and thermal conditions compared to two dimensional RF circuit modules.

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A Study on Motion Estimator Design Using DCT DC Value (DCT 직류 값을 이용한 움직임 추정기 설계에 관한 연구)

  • Lee, Gwon-Cheol;Park, Jong-Jin;Jo, Won-Gyeong
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.38 no.3
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    • pp.258-268
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    • 2001
  • The compression method is necessarily used to send the high quality moving picture that contains a number of data in image processing. In the field of moving picture compression method, the motion estimation algorithm is used to reduce the temporal redundancy. Block matching algorithm to be usually used is distinguished partial search algorithm with full search algorithm. Full search algorithm be used in this paper is the method to compare the reference block with entire block in the search window. It is very efficient and has simple data flow and control circuit. But the bigger the search window, the larger hardware size, because large computational operation is needed. In this paper, we design the full search block matching motion estimator. Using the DCT DC values, we decide luminance. And we apply 3 bit compare-selector using bit plane to I(Intra coded) picture, not using 8 bit luminance signals. Also it is suggested that use the same selective bit for the P(Predicted coded) and B(Bidirectional coded) picture. We compare based full search method with PSNR(Peak Signal to Noise Ratio) for C language modeling. Its condition is the reference block 8$\times$8, the search window 24$\times$24 and 352$\times$288 gray scale standard video images. The result has small difference that we cannot see. And we design the suggested motion estimator that hardware size is proved to reduce 38.3% for structure I and 30.7% for structure II. The memory is proved to reduce 31.3% for structure I and II.

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Study on the method of safety diagnosis of electrical equipments using fuzzy algorithm (퍼지알고리즘을 이용한 전기전자기기의 안전진단방법에 대한 연구)

  • Lee, Jae-Cheol
    • Journal of Digital Convergence
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    • v.16 no.7
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    • pp.223-229
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    • 2018
  • Recently, the necessity of safety diagnosis of electrical devices has been increasing as the fire caused by electric devices has increased rapidly. This study is concerned with the safety diagnosis of electric equipment using intelligent Fuzzy technology. It is used as a diagnostic input for the multiple electrical safety factors such as the use current, cumulative use time, deterioration and arc characteristics inherent to the equipment. In order to extract these information in real time, a device composed of various sensor circuits, DSP signal processing, and communication circuit is implemented. The fuzzy logic algorithm using the Gaussian function for each information is designed and compiled to be implemented on a small DSP board. The fuzzy logic receives the four diagnostic information, deduces it by the fuzzy engine, and outputs the overall safety status of the device as a 100-step analog fuzzy value familiar to human sensibility. By experiments of a device that combines hardware and fuzzy algorithm implemented in this study, it is verified that it can be implemented in a small DSP board with human-friendly fuzzy value, diagnosing real-time safety conditions during operation of electric equipment. In the future, we expect to be able to study more intelligent diagnostic systems based on artificial intelligent with AI dedicated Micom.

A Study on the Pixel-Paralled Image Processing System for Image Smoothing (영상 평활화를 위한 화소-병렬 영상처리 시스템에 관한 연구)

  • Kim, Hyun-Gi;Yi, Cheon-Hee
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.11
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    • pp.24-32
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    • 2002
  • In this paper we implemented various image processing filtering using the format converter. This design method is based on realized the large processor-per-pixel array by integrated circuit technology. These two types of integrated structure are can be classify associative parallel processor and parallel process DRAM(or SRAM) cell. Layout pitch of one-bit-wide logic is identical memory cell pitch to array high density PEs in integrate structure. This format converter design has control path implementation efficiently, and can be utilize the high technology without complicated controller hardware. Sequence of array instruction are generated by host computer before process start, and instructions are saved on unit controller. Host computer is executed the pixel-parallel operation starting at saved instructions after processing start. As a result, we obtained three result that 1)simple smoothing suppresses higher spatial frequencies, reducing noise but also blurring edges, 2) a smoothing and segmentation process reduces noise while preserving sharp edges, and 3) median filtering, like smoothing and segmentation, may be applied to reduce image noise. Median filtering eliminates spikes while maintaining sharp edges and preserving monotonic variations in pixel values.