• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.297-300
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• 2002

Application of electronic nose and PLD chip design was developed to be used in gas discrimination system for limited kinds of gas. An array of 4 metal oxide gas sensors with different selectivity patterns were used in order to measure gases. BP(Back Propagation) algorithm was designed and implemented on CPLD of two hundred thousand gate level chips by VHDL language for processing input signals from 4 kinds of gas sensors. This module successfully discriminated 4 kinds of gases and displayed the results on LCD and LED. The developed module could be used for various applications in the field of food process control and alcohol judgment.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.289-292
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• 2007

Polymethly methacrylate(PMMA) and polydimethlysiloxane(PDMS) surfaces were treated to improve adhesiveness by irradiation of a Nd:YAG pulse laser beam($\lambda=266nm$). A pulse laser beam was directed on a polymer surface in air, and the number of pulses was controlled by mobile velocity of a motorized stage. The laser treated surfaces were investigated using an optical microscope and a contact angle measuring instrument. It was thereby revealed that the contact angles were decreased in the laser treated surface. This in turn led to an increase of oxygen content and improved adhesiveness on the modified surface. With improved surface adhesion, a fluid channel could be formed on the laser treated surface region.

• Journal of Digital Convergence
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• v.14 no.4
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• pp.419-424
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• 2016

In this paper, we studied a light distribution for the LED chips arrangement using an optical design software. The structures of the edge type LED luminaires are reflector plane, LGP(lighting guide plane) and diffuse plane. The reflector plane is on the middle of the overall structure. We had simulation that placing LED chips on the reflector center of the reflector edge by changing the position of LED chips above the reflector center at 1mm, 2mm, and 3mm respectively. In the case, when LED chips are on the center of the reflector, it shows the light distribution of the general diffuse illumination, the semi-direct distribution with 0.56 efficiency and the direct distribution with 0.31 efficiency. And the wedge type LGP shows more efficiency than the flat type. Gradually increasing shape of semi-spherical type by 0.015mm has power of 1.02W, efficiency of 0.25, and maximum luminous intensity of 0.104W/sr, it also and shows the better optical characteristics than the reflector plane that have no patterns. This semi-spherical type shows the better optical characteristics than the reflector plane that have no patterns.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.320-324
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• 2011

TOPO/TOP capped CdSe nanoparticles were synthesized via thermal-solvent method. The 540 nm green and 620 nm red emitting CdSe nanoparticles were obtained by controlling the reaction time and temperature. Phosphor conversion white LED was produced combining a 460 nm emitting InGaN LED chip as an excitation source with 540 and 620 nm CdSe nanoparticles as phosphors. The single or double phosphor layer was fabricated by mixing with epoxy, and investigated the effects on the luminous properties of the white LED. The single phosphor layer white LED showed 5.78 lm/W with CIE of (0.36, 0.45) in reddish white, and the double phosphor layer white LED showed 7.28 lm/W with that of (0.32, 0.34) in pure white at 20 mA. When the 400 nm near-UV LED was applied to optical pumping source, the luminous efficiency of white LED was enhanced to 8.76 lm/W.

• Smart Media Journal
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• v.11 no.9
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• pp.21-29
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• 2022

Ultra Violet(UV) is gradually being replaced with LED instead of general UV lamps. However, the light efficiency of UV LED is still lower than that of the general lamp, and the light efficiency is also low. Due to the current environment and technical problems of UV lamps, the LED replacements are gradually being made. In this study, a new package design and analysis were performed to increase the lifetime and performance of UV LEDs. A new packaging for UV LED were designed and implemented. The new packaging for UV LED was constructed to improve light efficiency. And the electrical and optical characteristics were analyzed respectively. To improve the optical efficiency in UV LED package, the Al has been used based on high reflectivity and applying the optimal lens focusing. Compared to the existing silver Ag, the light efficiency was improved by about 30% or more, and it was confirmed that the light output degradation characteristic was improved by about 10% in the newly applied optical device chip.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1342-1344
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• 2000

This paper presents a microcontroller-based control circuit for color variation of high brightness RGB LEDs in $8{\times}8$ matrix array. The control circuit is comprised of an AT89C52 chip, D Flip-flops, and transistors for switching, and is used to adjust the number of LEDs operated for color variation. For a stable operation, it is required that the input current to each LED should be maintained to a normal value irrespective of the number of LEDs operated.