• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.158-162
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• 2006

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).

• Journal of the Korean Graphic Arts Communication Society
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• v.20 no.2
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• pp.131-140
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• 2002

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.78-79
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• 2001

노광 후 지연(Post Exposure Delay： PED) 효과는 그림 1과 같이 노광 후 지연 시간에 따른 감광제의 Profile에 thinning, T-top, foot, undercut 를 보여주는 현상으로 화학 증폭형 감광제(Chemically Amplified Resist, CAR) 개발에 있어 PED의 안정성은 중요한 요소이다(1). 따라서 노광후 지연 효과에 대한 모델링은 연구와 개발을 위한 시뮬레이션 tool에 있어 매우 의미 있는 일이다. T-top 이나 undercut 를 형성하는 Surface inhibition layer(SIL) 은 노광 후 지연시 발생되는 environmental base contamination, acid evaporation 이 주요 원인이며 다른 원인으로는 감광제 속에서 acid migration, spin coating 동안에 photoacid generator (PAG)의 고갈, internal basic impurities 이며 그 외에 nonbsic atmospheric contamination, high power laser source의 영향 등이 있다. (중략)

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.61-69
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• 2014

With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.

• Journal of the Korean Graphic Arts Communication Society
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• v.20 no.1
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• pp.91-101
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• 2002

An acid amplifier is defined as an acid-generating agent which is decomposed autocatalytically to produce new strongly acidic molecules in a non-liner manner, The addition of the acid amplifiers to conventional chemically amplified photoresists consisting of photoacid generators and acid-sensitive polymers result in the improvement of photosensitivity due to the amplified generation of catalytic acid molecules as a result of the decomposition of acid amplifiers. We synthesized and evaluated 1-hydroxy-4-tosyloxy cyclohexane(AA-1) and 1,4-ditosyloxy cyclohexane(Ah-2) as novel acid amplifiers. The acid amplifiers(AA-1, AA-2) showed reasonable thermal stability for resist processing temperature. As estimated by the sensitivity curve, tort-butyl methacrylate homopolymer(ptBMA) film doped with AA-1 or 2 exhibited much higher photosensitivity than ptBMA film without AA-1 or 2. And AA-1 showed higher effect than AA-2 on enhancing photosensitivity of ptBMA film.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.252-264
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• 2009

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.45-48
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• 2002

This paper discusses the surface roughness of negative chemically amplified resists, SAL601 exposed by I-beam direct writing. system. Surface roughness, as measured by atomic force microscopy, have been simulated and compared to experimental results. Molecular-scale simulator predicts the roughness dependence on material properties and process conditions. A chemical amplification is made to occur in the resists during PEB process. Monte-Carlo and exposure simulations are used as the same program as before. However, molecular-scale PEB simulation has been remodeled using a two-dimensional molecular lattice representation of the polymer matrix. Changes in surface roughness are shown to correlate with the dose of exposure and tile baking time of PEB process. The result of simulation has a similar tendency with that of experiment.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.437-471
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• 2002

The photosensitivity enhancement of photoresist achieved by the addition of acid amplifiers stems from the autocatalytic decomposition of the acid amplifiers triggered by acidic species generated from a photoacid gen-erator. In this research we synthesized and evaluated 4-hydroxy-4'-p-styrenesulfonyloxy isopropylidene dicyclohex-ane(1), 4,4'-di-p-styrenesulfonyloxy isopropylidene dicyclohexane(2) and 4-p-styrenesulfonyloxy-4'-tosyloxy isopropylidene dicyclohexane(3) as novel acid amplifiers. These acid amplifiers(1-3) showed reasonable thermal stability for resist pro-cessing temperature. As estimated by the sensitivity curve, 1-3 were 2X-12X sensitive than poly(tert-butyl meth-acrylate) film in the presence of a photoacid generator and, therefore, provides practical applicability for photoimaging.