• 공업화학
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• 제17권2호
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• pp.158-162
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• 2006

새로운 극자외선 리소그래피용 화학증폭형 레지스트의 매트릭스 수지로 poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate]를 합성하고 평가하였다. 이 중합체로 제조된 레지스트로 KrF 엑시머 레이저 노광장비를 사용하여 선폭 120 nm (피치 240 nm)를 구현할 수 있었다. 극자외선 리소그래피 장비를 이용하여 평가한 결과 선폭 50 nm (피치 180 nm)의 포지형 패턴을 얻었다. $CF_{4}$ 플라즈마를 이용한 건식에칭내성 평가 결과 기존 원자외선 레지스트용 매트릭스 수지인 poly(4-hydroxystyrene)보다 약 10% 향상되었다.

• 한국인쇄학회지
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• 제20권2호
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• pp.131-140
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• 2002

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.78-79
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• 2001

노광 후 지연(Post Exposure Delay： PED) 효과는 그림 1과 같이 노광 후 지연 시간에 따른 감광제의 Profile에 thinning, T-top, foot, undercut 를 보여주는 현상으로 화학 증폭형 감광제(Chemically Amplified Resist, CAR) 개발에 있어 PED의 안정성은 중요한 요소이다(1). 따라서 노광후 지연 효과에 대한 모델링은 연구와 개발을 위한 시뮬레이션 tool에 있어 매우 의미 있는 일이다. T-top 이나 undercut 를 형성하는 Surface inhibition layer(SIL) 은 노광 후 지연시 발생되는 environmental base contamination, acid evaporation 이 주요 원인이며 다른 원인으로는 감광제 속에서 acid migration, spin coating 동안에 photoacid generator (PAG)의 고갈, internal basic impurities 이며 그 외에 nonbsic atmospheric contamination, high power laser source의 영향 등이 있다. (중략)

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.61-69
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• 2014

With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.

• 한국인쇄학회지
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• 제20권1호
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• pp.91-101
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• 2002

An acid amplifier is defined as an acid-generating agent which is decomposed autocatalytically to produce new strongly acidic molecules in a non-liner manner, The addition of the acid amplifiers to conventional chemically amplified photoresists consisting of photoacid generators and acid-sensitive polymers result in the improvement of photosensitivity due to the amplified generation of catalytic acid molecules as a result of the decomposition of acid amplifiers. We synthesized and evaluated 1-hydroxy-4-tosyloxy cyclohexane(AA-1) and 1,4-ditosyloxy cyclohexane(Ah-2) as novel acid amplifiers. The acid amplifiers(AA-1, AA-2) showed reasonable thermal stability for resist processing temperature. As estimated by the sensitivity curve, tort-butyl methacrylate homopolymer(ptBMA) film doped with AA-1 or 2 exhibited much higher photosensitivity than ptBMA film without AA-1 or 2. And AA-1 showed higher effect than AA-2 on enhancing photosensitivity of ptBMA film.

• 통합자연과학논문집
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• 제2권4호
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• pp.252-264
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• 2009

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.45-48
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• 2002

This paper discusses the surface roughness of negative chemically amplified resists, SAL601 exposed by I-beam direct writing. system. Surface roughness, as measured by atomic force microscopy, have been simulated and compared to experimental results. Molecular-scale simulator predicts the roughness dependence on material properties and process conditions. A chemical amplification is made to occur in the resists during PEB process. Monte-Carlo and exposure simulations are used as the same program as before. However, molecular-scale PEB simulation has been remodeled using a two-dimensional molecular lattice representation of the polymer matrix. Changes in surface roughness are shown to correlate with the dose of exposure and tile baking time of PEB process. The result of simulation has a similar tendency with that of experiment.

• 대한화학회지
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• 제46권5호
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• pp.437-471
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• 2002

포토레지스트의 감도 증진은 광산 발생제로부터 발생되는 산에 의해 자동촉매분해가 일어나는 산 증식제를 화학 증폭형 포트레지스트에 첨가함으로써 얻을 수 있다. 본 연구에서는 이소프로필리덴 디시클로헥산올의 p스티렌술폰산 유도체를 산 증식제로 합성되고 그 성능을 평가하였다. 이러한 산 증식제로 합성한 4-hydroxy-4`-p-styrensulfonyloxy isopropylidene dicyclohexane(1), 4,4`-di-styrenesulfonyloxy isopropylidene dicyclohexane(2) 그리고 4-p-styrene-sulfonyloxy-4`-tosyloxy isopropylidene dicyclohexane(3)는 레지스트 공정온도에 대하여 충분한 열적 안정성을 나타내었다. 또한 이러한 산 증식제를 사용한 경우에 광산 발생제만 사용한 poly(tert-butyl methacrylate)film에 비교하여 2배에서 12배 정도의 감도 증진이 일어나 광화상 제조에 실용적으로 응용 할 수 있음을 확인하였다.