• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.415-420
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• 2001

Water usage in the semiconductor industries is dramatically increased by not only using bigger wafer from 8 inches to 12 inches but also by adapting new process such as Chemical Mechanical Planarization (CMP) process invented by IBM in late '80. However, The document published by International Semiconductor Association suggests the decreasing ultra pure water (UPW) use from 22 gallon/in$^2$in 1997 to 5 gallon/in$^2$ in 2012. The criteria will possibly used as exporting obstacle in the future. Generally, Solid content of CMP slurry is about 15wt%. The slurry is diluted with UPW before fed to a CMP process. When the slurry is discharged from the process as waste, it contains 0.1~0.6wt% of solid content and 9~10 at pH. The CMP waste slurry is discharged to stream with minimum treatment. In this study, to find optimum condition of coagulation for water recovery from the waste CMP slurry various condition of coagulation were examined. After coagulation far 0.1 wt% solid content of waste CMP slurry, the sludge volume was 10~15% after 30 min of sedimentation time. For the 0.5 wt%, sludge volume was 50~55% after one hour of sedimentation time. For more than 80% of water recycling, the solid content should be in the range of 0.1 to 0.2wr%. Based on the result of the turbidity removal, the Zeta Potential and the analysis of heavy metals, the optimum condition for 0.1 wr% of waste CMP slurry was with 20 mg/L of PACI at 4 to 5 of pH. The result showed that the optimum conditions fer the 0.1 wt% waste CMP slurry were 100mg/L of Alum at 4~5 of pH, 100 mg/L of MgCI$_2$at pH 10 to 11 and 100 mg/L of Ca(OH)$_2$at pH 9 to 11, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.482-483
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• 2009

In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.23-23
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• 2011

Chemical-Mechanical Planarization (CMP) 공정이란 화학적 반응 및 기계적인 힘이 복합적으로 작용하여 표면을 평탄화하는 공정이다. 이러한 CMP 공정은 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위하여 도입되었으며 반도체 제조를 위한 필수공정으로 그 중요성이 강조되고 있다. 특히 최근에는 Inter-Level Dielectric (ILD)의 형성과 Shallow Trench Isolation (STI) 공정에서실리콘 산화막을 평탄화하기 위한 CMP 공정에 대해 연구가 활발히 이루어지고 있다. 그러나 CMP 공정 후 scratch, pitting corrosion, contamination 등의 Defect가 발생하는 문제점이 존재한다. 이 중에서도 scratch는 기계적, 열적 스트레스에 의해 생성된 패드의 잔해, 슬러리의 잔유물, 응집된 입자 등에 의해 표면에 형성된다. 반도체 공정에서는 다양한 종류의 실리콘 산화막이 사용되고 gks이러한 실리콘 산화막들은 종류에 따라 경도가 다르다. 따라서 실리콘 산화막의 경도에 따른 CMP 공정 및 이로 인한 Scratch 발생에 관한 연구가 필요하다고 할 수 있다. 본 연구에서는 scratch 형성의 거동을 알아보기 위하여 boronphoshposilicate glass (BPSG), plasma enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS), high density plasma (HDP) oxide의 3가지 실리콘 산화막의 기계적 성질 및 이에 따른 CMP 공정에 대한 평가를 실시하였다. CMP 공정 후 효율적인 scratch 평가를 위해 브러시를 이용하여 1차 세정을 실시하였으며 습식세정방법(SC-1, DHF)으로 마무리 하였다. Scratch 개수는 Particle counter (Surfscan6200, KLA Tencor, USA)로 측정하였고, 광학현미경을 이용하여 형태를 관찰하였다. Scratch 평가를 위한 CMP 공정은 실험에 사용된 3가지 종류의 실리콘 산화막들의 경도가 서로 다르기 때문에 동등한 실험조건 설정을 위해 동일한 연마량이 관찰되는 조건에서 실시하였다. 실험결과 scratch 종류는 그 형태에 따라 chatter/line/rolling type의 3가지로 분류되었다 BPSG가 다른 종류의 실리콘 산화막에 비해 많은 수에 scratch가 관찰되었으며 line type이 많은 비율을 차지한다는 것을 확인하였다. 또한 CMP 공정에서 압력이 증가함에 따라 chatter type scratch의 길이는 짧아지고 폭이 넓어지는 것을 확인하였다. 본 연구를 통해 실리콘 산화막의 경도에 따른 scratch 형성 원리를 파악하였다.

• 한국산업융합학회 논문집
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• 제23권6_2호
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• pp.1051-1058
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• 2020

The chemical mechanical planarization (CMP) is a process of physically and chemically polishing the semiconductor substrate. The planarization quality of a substrate can be evaluated by the within wafer non-uniformity (WIWNU). In order to improve WIWNU, it is important to manage the pad profile. In this study, a device capable of non-contact measurement of the pad thickness profile was developed. From the measured pad profile, the profile of the pad surface and the groove was extracted using the envelope function, and the pad thickness profile was derived using the difference between each profile. Thickness profiles of various CMP pads were measured using the developed PMS and envelope function. In the case of IC series pads, regardless of the pad wear amount, the envelopes closely follow the pad surface and grooves, making it easy to calculate the pad thickness profile. In the case of the H80 series pad, the pad thickness profile was easy to derive because the pad with a small wear amount did not reveal deep pores on the pad surface. However, the pad with a large wear amount make errors in the lower envelope profile, because there are pores deeper than the grooves. By removing these deep pores through filtering, the pad flatness could be clearly confirmed. Through the developed PMS and the pad thickness profile calculation method using the envelope function, the pad life, the amount of wear and the pad flatness can be easily derived and used for various pad analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.132-135
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• 2004

현재 사용 되고 있는 Cu CMP slurry에서 pH 적정제의 역할은 slurry의 연마 거동을 결정 하는 중요한 요소이다. 일반적으로 사용 되고 있는 적정제로는 $NH_4OH$, KOH가 있다. 구리 CMP용 슬러리내에서 CMP 공정 중에 과산화수소 $(H_2O_2)$의 영향에 관한 연구는 있으나, 과산화수소의 농도 (vol %) 변화에 따라서 pH적정제가 하는 역할과 반응이 CMP 공정중에 미치는 영향에 관해서 연구된 바 없다. 이 논문에서는 pH 적정제가 과산화수소의 농도에 따라서 산성, 중성, 염기성에서 어떠한 변화를 일으키는지에 관해서 dynamic etch rate과 removal rate을 비교 하였고, static etch rate을 이용하여 Cu 표면이 etching 되는 속도를 비교 하였다. 그 결과, 산성과 중성에서는 $NH_4OH$와 KOH의 경향성은 비슷하였으나, 염기성에서는 KOH를 첨가한 경우 변화가 나타나지 않았다. 따라서, pH가 염기성으로 갈수록 과산화수소의 저 농도에서 $NH_4OH$의 영향이 더 커짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.385-389
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• 2003

There are four main components of the CMP process: polishing pad, slurry, elastic supporter, and pad conditioner. The polishing pad is an essential component to the reproducibility of polishing uniformity in CMP process. However, the polishing pad in recently using metal CMP raised the several points of high cost caused by the increase of cycle time and the many usage of slurry. It is necessary to develop the novel polishing pad which would lead the cost reduction by the higher pad life-cycle, minimized cycle time and lower slurry usage. The characteristics of polishing pad were studied on the effects of different sets of the Polishing pad, which can be applied to metal chemical mechanical polishing process for global planarization of multilevel interconnection structure. The main purpose of this experiment is cost reduction by the increase of pad life-time, the decrease of cycle time and the lower usage of slurry through the specific hard porous structured pad design. It is confirmed that the novel polishing pad made the slurry usage decrease to 60% as well as the pad life-time increase twice with the 25% improvement of removal rate. The polishing time could be decreased and it also helped the cycle time to diminish. It can be expected that this results will help both the process throughput and the device yield to be improved.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.