• Title/Summary/Keyword: chemical materials

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Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

  • Lee, Sun-Sook;Lee, Eun-Seok;Kim, Seok-Hwan;Lee, Byung-Kook;Jeong, Seok-Jong;Hwang, Jin-Ha;Kim, Chang-Gyoun;Chung, Taek-Mo;An, Ki-Seok
    • Bulletin of the Korean Chemical Society
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    • v.33 no.7
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    • pp.2207-2212
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    • 2012

  • Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

  • https://doi.org/10.5012/bkcs.2012.33.7.2207 인용 PDF KSCI