• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.150.1-150.1
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• 2014

Showerhead is used as a main part in the semiconductor equipment. The face plate flatness should remain constant and the cleaning performance must be gained to keep the uniformity level of etching or deposition in chemical vapor deposition process. High operating temperature or long period of thermal loading could lead the showerhead to be deformed thermally. In some case, the thermal deformation appears very sensitive to showerhead performance. This paper describes the methods for robust design using computational fluid dynamics. To reveal the influence of the post distribution on flow pattern in the showerhead cavity, numerical simulation was performed for several post distributions. The flow structure appears similar to an impinging flow near a centered baffle in showerhead cavity. We took the structure as an index to estimate diffusion path. A robust design to reduce the thermal deformation of showerhead can be achieved using post number increase without ill effect on flow. To prevent the showerhead deformation by heat loading, its face plate thickness was determined additionally using numerical simulation. The face plate has thousands of impinging holes. The design key is to keep pressure drop distribution on the showerhead face plate with the holes. This study reads the methodology to apply to a showerhead hole design. A Hagen-Poiseuille equation gives the pressure drop in a fluid flowing through such hole. The assumptions of the equation are the fluid is viscous-incompressible and the flow is laminar fully developed in a through hole. An equation can be expressed with radius R and length L related to the volume flow rate Q from the Hagen-Poiseuille equation, $Q={\pi}R4{\Delta}p/8{\mu}L$, where ${\mu}$ is the viscosity and ${\Delta}p$ is the pressure drop. In present case, each hole has steps at both the inlet and the outlet, and the fluid appears compressible. So we simplify the equation as $Q=C(R,L){\Delta}p$. A series of performance curves for a through hole with geometric parameters were obtained using two-dimensional numerical simulation. We obtained a relation between the hole diameter and hole length from the test cases to determine hole diameter at fixed hole length. A numerical simulation has been performed as a tool for enhancing showerhead robust design from flow structure. Geometric parameters for the design were post distribution and face plate thickness. The reinforced showerhead has been installed and its effective deposition profile is being shown in factory.

• 전기화학회지
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• 제14권3호
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• pp.184-190
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• 2011

다공성 중공형태의 $LiMn_2O_4$는 실리카 템플레이트과 침전법에 의해 합성되었다. 합성한 $LiMn_2O_4$는 나노사이즈의 1차입자를 가지며 다공성 중공형태를 가지고 있었다. 실리카 템플레이트의 제거는 NaOH를 이용하여 화학적 에칭법이 사용되었다. NaOH의 농도를 높여줌에 따라 망간산화물 입자 크기가 증가 하며 다공성의 중공구가 형성되었다. X-선 회절 분석을 통하여 합성된 $LiMn_2O_4$는 Fd3m의 공간 그룹을 가지는 스피넬 구조가 형성된 것을 확인 할 수 있었다. 실리카와 망간염의 비율을 높여주었을 경우 합성된 $LiMn_2O_4$는 1차입자의 크기는 감소한다. 실리카와 망간염의 비율이 1 : 9 이상인 경우에서 마이크론 단위의 정방정계의 $LiMn_2O_4$가 합성되었다. 다공성 중공형태의 $LiMn_2O_4$의 전기화학적 특성을 평가하기 위하여 2032형태의 코인셀을 제작하여 충/방전 테스트를 하였다. 나노사이즈의 1차입자를 가진 시료의 경우에는 마이크론 사이즈의 1차입자를 가진 시료보다 용량은 낮았지만 용량유지율은 향상되는 것 확인 할 수 있었다.

• 열처리공학회지
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• 제25권1호
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• pp.6-13
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• 2012

HVOF thermal spray coating of 80%WC-CoFe powder is one of the most promising candidate for the replacement of the traditional hard chrome plating and hard ceramics coating because of the environmental problem of the very toxic $Cr^{6+}$ known as carcinogen by chrome plating and the brittleness of ceramics coatings. 80%WC-CoFe powder was coated by HVOF thermal spraying for the study of durability improvement of the high speed spindle such as air bearing spindle. The coating procedure was designed by the Taguchi program, including 4 parameters of hydrogen and oxygen flow rates, powder feed rate and spray distance. The surface properties of the 80%WC-CoFe powder coating were investigated roughness, hardness and porosity. The optimal condition for thermal spray has been ensured by the relationship between the spary parameters and the hardness of the coatings. The optimal coating process obtained by Taguchi program is the process of oxygen flow rate 34 FRM, hydrogen flow rate 57 FRM, powder feed rate 35 g/min and spray distance 8 inch. The coating cross-sectional structure was observed scanning electron microscope before chemical etching. Estimation of coating porosity was performed using metallugical image analysis. The Friction and wear behaviors of HVOF WC-CoFe coating prepared by OCP are investigated by reciprocating sliding wear test at $25^{\circ}C$ and $450^{\circ}C$. Friction coefficients (FC) of coating decreases as sliding surface temperature increases from $25^{\circ}C$ to $450^{\circ}C$.

• Restorative Dentistry and Endodontics
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• 제22권1호
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• pp.228-243
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• 1997

The changes of microstructures, morphology of sclerotic dentin and bonding aspects generated by an adhesive resin was investigated. Incisors and premolars showing natural cervical abrasions were collected and conditioned with 10 % phosphoric acid or 10 % maleic acid. The sclerotic dentin specimens were then rinsed and blot-dried and applied with dentin adhesive (All Bond 2) to the conditioned dentin surface. To examine the morphologic change of the sclerotic dentin specimen after etching and bonding procedure, the treated specimens were examined by SEM. To analyze the chemical composition of sclerotic dentin and crystals occluding dentinal tubules, the sclerotic dentin specimen was powdered and examined with X-ray Diffractometer. To investigate the Ca/P weight percent ratio within the dentinal tubules, the sclerotic dentin specimen was fractured perpendicularly to the long axis of the tooth from the center of cervical abrasion lesion and then examined with EDX(Energy Dispersive X-ray) microanalyzer. The results were as follows : 1. The increased width of peritubular dentin and the depositions of the irregular amorphous materials within the dentinal tubules were showed in the sclerotic dentin specimens. 2. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the lateral side of tubules rather than cross-sectional tubule openings was showed exclusively at the incisal and gingival incline of the specimens. 3. After the treatment of sclerotic dentin specimen with 10 % phosphoric acid or 10 % maleic acid, the hybrid layer was not formed evidently and the resin tag was not formed or shortly penetrated into the tubules with the thinner diameter. 4. According to the results of XRD analysis of the sclerotic dentin specimen, Hydroxyapatite and Octacalcium phosphate were predominent, however, Whitlockite crystals were rare. 5. The mean Ca/P weight percent ratio analysed from 5 fractured sclerotic dentin specimens was $2.322{\pm}0.170$ at the intertubular dentin, $1.826{\pm}0.051$ within the dentinal tubule.

• 한국광학회지
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• 제3권4호
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• pp.258-265
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• 1992

저압화학기상증착법으로 Si 기판에 $P_{2}O_{5}-SiO_{2}$ 광도파박막계를 제작하였다. 제작된 박막의 광도파손실율은 1.65dB/cm이었으나 $1100^{\circ}C$에서 열처리한 뒤에는 0.1dB/cm 이하로 크게 감소하였다. 레이저 노광법과 활성이온식각법으로 광도파로를 제작하여 $1100^{\circ}C$에서 열처리하였다. 열처리 결과 도파로 코어의 모양은 사각형에서 반원형으로 바뀌었으며 0.6328$\mu$m에서 0.03dB/cm 그리고 1.53$\mu$m에서 0.04dB/cm의 낮은 도파손실율을 나타내었다. 도파로의 도파손실율이 감소하는 이유로는 고온 열처리과정에서 첫째 박막조직과 결합하여 광흡수를 일으키는 수소가 확산 방출되고 둘째 광산란을 일으키는 도파로의 거친 계면 및 박막조직이 재형성되며, 셋째 식각법으로 도파로를 만들때 생기는 도파로 코어의 거친 계면이 매끄럽게되어 도파광의 산란손실이 중어들기 때문으로 생각된다.

• 재활복지공학회논문지
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• 제11권2호
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• pp.133-141
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• 2017

하이브리드 음향센서 (hybrid acoustic sensor)는 음압 기반의 음향센서 (ECM)와 진동 기반의 가속도 센서(acceleration sensor)가 접목된 구조이다. 이는 음향센서의 저주파 대역 감도와 가속도 센서의 고주파 대역 감도를 결합하여 저주파에서 고주파 대역까지 광범위하게 음향을 포집할 수 있다. 본 논문에서는 하이브리드 음향센서에 사용되는 가속도 센서를 제안하였다. 가속도 센서는 음향신호에 의해 발생되는 고막의 진동을 포집한다. 제안된 가속도 센서의 사이즈는 고막의 해부학적 구조와 음향센서인 ECM의 규격을 고려하여 직경 3.2 mm로 결정하였다. 그리고 하이브리드 음향센서가 고감도 광대역 특성을 가지도록 하기 위해서는 가속도 센서의 공진 주파수는 3.5 kHz 부근에서 생성되는 것을 목표로 하였다. 가속도 센서를 구성하는 진동막은 수학적 모델과 유한요소 해석을 통하여 기하학적 구조를 도출하였다. 이를 바탕으로 화학적 식각공정을 이용하여 진동막을 제작하였다. 그리고 제작된 진동막의 주파수 특성을 확인하기 위하여 외력에 의한 진동 측정 실험을 수행하였고, 실험 결과 진동막의 기계적 공진은 3.4 kHz에서 발생되었다. 그러므로 제안한 가속도 센서는 하이브리드 음향센서에 유용하게 활용될 수 있을 것으로 판단된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.149-158
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• 2005

This paper describes design, fabrication, and application of the silicon based temperature controllable micro reactor. In order to achieve fast temperature variation and low energy consumption, reaction chamber of the micro reactor was thermally isolated by etching the highly conductive silicon around the reaction chamber. Compared with the model not having thermally isolated structure, the thermally isolated micro reactor showed enhanced thermal performances such as fast temperature variation and low energy consumption. The performance enhancements of the micro reactor due to etched holes were verified by thermal experiment and numerical analysis. Regarding to 42 percents reduction of the thermal mass achieved by the etched holes, approximately 4 times faster thermal variation and 5 times smaller energy consumption were acquired. The total size of the fabricated micro reactor was $37{\times}30{\times}1mm^{3}$. Microchannel and reaction chamber were formed on the silicon substrate. The openings of channel and chamber were covered by the glass substrate. The Pt electrodes for heater and sensor are fabricated on the backside of silicon substrate below the reaction chamber. The dimension of channel cross section was $200{\times}100{\mu}m^{2}$. The volume of reaction chamber was $4{\mu}l$. The temperature of the micro reactor was controlled and measured simultaneously with NI DAQ PCI-MIO-16E-l board and LabVIEW program. Finally, the fabricated micro reactor and the temperature control system were applied to the thermal denaturation and the trypsin digestion of protein. BSA(bovine serum albumin) was chosen for the test sample. It was successfully shown that BSA was successfully denatured at $75^{\circ}C$ for 1 min and digested by trypsin at $37^{\circ}C$ for 10 min.

• Corrosion Science and Technology
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• 제9권6호
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• 대한금속재료학회지
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• 제48권5호
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.382-387
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• 2014

본 연구에서는 PC/ABS 블렌드를 고속전단성형법을 사용하여 제조하였고 스크류 회전속도와 전단부하시간을 공정 변수로 하여 이에 따른 블렌드의 모폴로지 변화를 분석하였다. 블렌드의 모폴로지 및 ABS 분산상의 크기를 주사전자현미경으로 관찰하여 안정한 상 구조와 최적의 물성을 가지는 고속전단성형조건을 확립하였고, 전단응력에 의한 블렌드의 열화 현상을 알아보기 위해 기계적 물성의 변화를 측정하였다. 이 때, 스크류 회전속도는 500 rpm에서 3000 rpm까지 변화시켰으며 전단부하시간은 10초에서 40초까지 주었다. 고속전단성형법을 사용하여 제조한 PC/ABS 블렌드 및 고속전단성형을 가하지 않은PC/ABS 컴파운드의 분산상 크기를 명확하게 관찰하기 위하여 블렌드의 단면에 크롬산 수용액을 이용한 에칭공정을 시행하였고 공정 전후의 모폴로지를 비교 분석하였다. 에칭으로 생긴 블렌드 내의 ABS 홀을 이미지 측정 프로그램인 Image J를 이용하여 측정한 결과, 스크류 회전속도에 따라 그 크기가 감소하였으며 특히 1000 rpm 이상의 스크류 회전속도 하에서 제조된 PC/ABS 블렌드의 경우, 기계적 물성이 급격하게 감소하여 블렌드의 분해가 일어났음을 알 수 있었다. 결과적으로 PC/ABS 블렌드에 1000 rpm의 스크류 회전속도를 가한 경우, 나노미터 단위의 분산상을 가지며 가장 안정한 상구조를 관찰할 수 있었고 인장강도 및 신율도 상대적으로 높아서 PC/ABS 블렌드의 최적 고속전단성형조건이라 할 수 있다.