• Bulletin of the Korean Chemical Society
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• v.20 no.2
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• pp.247-249
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• 1999

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.273-275
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• 1999

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.146-149
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• 2003

There are three major bonding types such as chemical bonding, thermal bonding, mechanical bonding to produce nonwoven fabrics. The development of the past few years has shown that the share of thermally bonded webs is growing steadily. The viability of the thermal bonding process is rooted in the price advantage obtained by lower energy costs. However, the thermal bonding process also obtains the quality requirements of the market place. (omitted)

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.4
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• pp.430-435
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• 2017

The effect of the surface profile on CFRP and aluminum metal bonding was studied. A small number of steps were made on the aluminum surface, and the shear stress and elongation were measured using a shear test after bonding with an autoclave method. As the number of surface steps increased, the shear stress and elongation increased. The surface bonding strength increased because of the effect of the mechanical and chemical bonding. When the number of effective stages was exceeded, the shear strength decreased again due to the aspect ratio of the step and the reduction of the penetration effect of the resin into the groove.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.365-371
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• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.

• Journal of the Korean Chemical Society
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• v.5 no.1
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• pp.52-55
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• 1961

Assuming an intramolecular hydrogen-bonding, computation has been made on the optical rotatory power of 2-Chloro-1-Propanol. The magnitude of the calculated rotation is in fair agreement with the measured value of Lucas (calculated value: 21.6. measured value: 17.39). The agreement supports the validity of the assumption concerning the hydrogen-bonding between O atom and Cl atom. The agreement in sign confirms the validity the Fischer projection formula given by Lucas.

• Bulletin of the Korean Chemical Society
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• v.2 no.1
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• pp.8-11
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• 1981

A new potential function based on spectroscopic results for diatomic molecules is presented and applied to the hydrogen bonding systems. The potential energy of interaction is supposed to have electrostatic, polarization, dispersion, repulsion and effective charge-transfer contributions. Estimates of the effective charge-transfer quantity have been made based on the average charge of the proton donor and the acceptor atoms. For dimers such as water, methanol, acetic acid and formic acid, the vibrational stretching frequencies and dimerization energies are calculated and dicussed in connection with Badger-Bauer rule.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• The korean journal of orthodontics
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• v.22 no.2 s.37
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• pp.449-474
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• 1992

The purpose of this study was to evaluate the in vitro shear bond strengths to enamel and the failure sites of three ceramic brackets and one metal bracket in combination with light cured orthodontic adhesive. The brackets were divided into four groups. Each ceramic bracket group had different bonding mechanisms with adhesive. Group A; metal bracket with foil-mesh base (control group) Group B; ceramic bracket with micromechanical retention Group C; ceramic bracket with chemical bonding Group D; ceramic bracket with mechanical retention and chemical bonding. Forty extracted human lower first premolars were prepared for bonding and 10 brackets for each group were bonded to prepared enamel surfaces with $Transbond^{\circledR}$ light cured ortho dontic adhesive. Twenty four hours after bonding, the Instron universal testing machine was used to test the shear bond strength of brackets to enamel. After debonding, brackets and enamel surfaces were examined under stereoscopic microscope to determine the failure sites, Statistical analysis of the data was carried out with ANOVA test and $Scheff\acute{e}$ test using SPSS PC+. The results were as follows. 1 . There were statistically significant differences in mean shear bond strengths of three ceramic bracket groups (p < 0.05). Shear bond strengths of group C and D were significantly higher than that of group B and shear bond strength of group C was significantly higher than that of group D. 2. Group C and D both had significantly higher shear bond strengths than metal bracket (group A), but there were no significant differences in shear bond strengths between group A and B (p < 0.05). 3. The failure sites of four bracket groups were also different. Group C and D failed primarily at enamel-adhesive interface, but group A and B failed primarily at bracket base-adhesive interface. 4. Among all ceramic bracket groups, group B was very similar to metal bracket in the aspect of shear bond strength and failure site.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.