• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.379-383
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• 2020

The novel voltammetry using a semi-circular potential wave for quasi-reversible charge transfer system on electrode is theoretically investigated. Compared with conventional voltammetry based on linear sweep such as linear sweep voltammetry (LSV), semi-circular potential sweep voltammetry (SCV) may decrease the charging current outside the center of potential range and increase the faradaic current at the midpoint due to variable scan rate. In this paper, we investigate the system based on macroelectrode where simple 1 dimensional (1 D) diffusion system is valid with various charge transfer rate constant (k₀). In order to observe the amplification at midpoint, voltammetric response with different midpoint ranging from -200 mV to 200 mV are studied. SCVs shows both the shift of peak potential and the amplification of peak current for quasi-reversible electrode reaction while only higher peak current is observed for reversible reaction. Moreover, the higher current at midpoint enable the amplification of current at low overpotential region which may assist the determination of onset potential as a figure-of-merit in electrocatalyst.

• Advances in nano research
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• v.3 no.1
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• Proceedings of the KSR Conference
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• 2010.06a
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• pp.514-520
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• 2010

This paper is about control algorithms that bi-direction DC-DC Converter using Super Capacitor and regenerative power from DC feeding system in train. In order to take advantage of regenerative energy efficient, charge and discharge level value of energy storage system serve as an important factor. Respect to output fluctuations of the substation and catenary voltage changing, we offers Charge-Discharge Auto Level Tuning Algorithms to improve system following of Energy Storage System.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.945-949
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• 1995

In order to investigate the performance of compression-type accelerometer on piezoelectric properties, PZT materials have been studied. The ring-shaped piezoelectric elements were prepared using commercial PZT powders by conventional ceramic process. Their estimated relative dielectric constant, piezoelectric charge constant (d33) and voltage constant (g33) values showed 390∼3400, (90∼593)×10-12 C/N and (19.5∼40.5)×10-3 V-m/N, respectively. The charge sensitivity of accelerometer is proportional to the piezoelectric charge constant value (d33) of PZT, but its voltage sensitivity is related with the piezoelectric voltage constant (g33). Since the mounted resonance frequency and sensitivity are dependent on the seismic mass as well as physical charateristics and size of PZT elements, the suitable considerations between two components are required for accelerometer's design.

• Journal of the Korean Institute of Intelligent Systems
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• v.20 no.2
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• pp.214-219
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• 2010

This paper deals with a nonlinear fuzzy $H_{\infty}$ filter design for SOC(state of charge) estimation in Lithium polymer battery. The dynamic equation of the battery cell is modeled as a T-S fuzzy system and the filter is designed via solutions of linear matrix inequalities. In order to illustrate the performance of the designed filter, a computer simulation is performed using the experimental data with the UDDS(urban dynamometer driving schedule) current profile.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1004-1009
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• 2003

Electroosmotic flow induced by an applied electrostatic potential field in microchannel is analyzed in this study. The electroosmotic flow is an alternative to pressure driven flow in microchannels, but the usage has been limited to the simple cases. In this study, We analyze electroosmotic flow driven by inhomogeneous surface charge on the channel wall. The surface charge varies along a direction perpendicular to the electric field in order to generate the electroosmotic flow. A numerical results substantiate the highly efficient mixing performance. It is highly the beneficial to fabrication process since only straight microchannel rather than complex geometry is enough to yield efficient mixing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.59-64
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• 1994

The Si-SiO$_2$interface trpas of the degraded short-channel SONOSFET memory devices were investigated using the charge pumping techniques. The degradation of devices with write/erase cycle appeared as the increase of the Si-SiO$_2$interface trap density. In order to determine the capture cross-section of the interface trap. I$\_$CP/-V$\_$GL/ characteristic curves were measured at different temperatures. Also, the spatial distributions of Si-SiO$_2$interface trap were examined by the variable-reverse bias boltage method.

• Analytical Science and Technology
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• v.8 no.4
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• pp.663-668
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• 1995

Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1330-1332
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• 1994

In order to investigate the properties of electrical conduction and space charge in crosslinked polyethylene film, we were observed the specimen with 200[${\mu}m$] thickness. The electrical conduction properties of specimen were measured temperature range from 30 to $110[^{\circ}C] $as well as $10^{-2}$ - 1 [MV/cm] of electric field. The investigations on influence of space charge were carried out at room temperature and $60 [^{\circ}C]$.