• Korean Journal of Materials Research
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• v.13 no.5
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• pp.317-322
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• 2003

Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.764-768
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• 2004

Perovskite Pb(Mn_{1/3}Sbu_{2/3})O_2-Pb(Zr,Ti)O_3\;(PMS-PZT) was prepared and ZnO doping effects on its piezoelectric properties were investigated. Pyrochlore phase was not identified in the PMS-PZT ceramics with $0\sim5\;mol\%$ ZnO sintered at $1100^{\circ}C$ for 2 hrs, and maximum sintered density of $7.92 g/cm^3$ was obtained. Piezoelectric charge constant and voltage constant increased to $359{\times}10^{-12}\;C/N\;and\;22.5{\times}10^{-13}\;Vm/N$, respectively, with increasing ZnO content. Mechanical quality factor reduced considerably with increasing ZnO content. When the ZnO content was 3 $mol\%$, electromechanical coupling factor and relative dielectric constant showed maximum values of $56\%$ and 1727, respectively. This should be evaluated by complicated variations of sintered density, tetragonality of lattice, grain size, and A-site vacancy generated by ZnO addition and $Zn^{2+}$ substitution.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.30-33
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• 2015

We report the synthesis of Ni-doped $BaFe_2Se_3$ single crystals by using a flux method. X-ray diffraction (XRD) of $Ba(Fe_{1-x}Ni_x)_2Se_3$ shows a gradual peak shift with an increase in the nominal Ni-doping rate, x = 0, 0.05, and 0.10, due to a decrease in unit-cell volume. All samples show a spin glass transition, and temperature dependence of magnetic susceptibility shows a negligible change in the spin-glass transition temperature ($T_g$) with Ni concentration x. The temperature dependence of electrical resistivity for $BaFe_2Se_3$ shows an insulating behavior, and the resistivity value at 295 K and the activation energy ($E_a$) obtained from the Arrhenius plot decrease with increasing x. These results suggest that the Ni doping can be effectively worked as a dopant for electron charge carriers, but is less efficient in controlling the magnetic property, such as spin glass transition, in the $BaFe_2Se_3$ compound.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.71-72
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• 1998

반도체 집적 공정의 발달로 차세대 소자용으로 30 A 이하의 극 박막 Si02 절연막이 요구되고 있으며, 현재 제품으로 50-70 A 두께의 절연막을 사용한 것이 발표되고 있다. 절연막의 두께가 앓아질수록 많은 문제가 발생할 수 있는데 그 예로 절연막의 breakdo때둥에 의한 신뢰성 특성의 악화, 절연막올 통한 direct tunneling leakage current, boron풍의 dopant 침투로 인한 소자 특성 ( (Threshold Voltage)의 불안, 전기적 stress하에서의 leakage current증가와 c charge-trap 및 피terface s쩌.te의 생성으로 인한 소자 특성의 변화 둥으로 요약 된다. 절연막의 특성올 개선하기 위해 여러 가지 새로운 공정들이 제안되었다. 그 예로, Nitrogen올 Si/Si02 계면에 doping하여 절연막의 특성을 개선하는 방법 으로 고온 열처 리 를 NH3, N20, NO 분위 기 에서 실시 하거 나, polysilicon 또는 s silicon 기판에 nitrogen올 이온 주입하여 열처리 하는 방법, 그리고 Plasma분 위기에서 Nitrogen 함유 Gas를 이용하여 nitrogen을 doping시키는 방법 둥이 연구되고 있다. 또한 Oxide cleaning 후 상온에서 성장되는 oxide를 최소화 하여 절연막의 특성올 개선하기 위하여 LOAD-LOCK을 이용하는 방법, C뼈피ng 공정의 개선올 통한 contamination 감소와 silicon surface roughness 감소 로 oxide 신뢰성올 개선하는 방법 둥이 있다. 구조적 인 측면 에 서 는 Polysilicon 의 g없n size 를 최 적 화하여 OxideIPolysilicon 의 계면 특성올 개선하는 연구와 Isolation및 Gate ETCH공정이 절연막의 특성에 미 치 는 영 향도 많이 연구되 고 있다 .. Plasma damage 가 Oxide 에 미 치 는 효과 를 제어하는 방법과 Deuterium열처리 퉁올 이용하여 Hot electron Stress하에서 의 MOS 소자의 Si/Si02 계면의 신뢰성을 개선하고 있다. 또한 극 박막 전연막의 신뢰성 특성올 통계적 분석올 통하여 사용 가능한 수명 올 예 측 하는 방법 과 Direct Tunneling Leakage current 를 고려 한 허 용 가농 한 동작 전 압 예측 및 Stress Induced Leakage Current 둥에 관해서 도 최 근 활발 한 연구가 진행되고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.478-481
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• 2000

Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.275-276
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• 2009

We have studied physical properties of organic light-emitting diodes (OLEDs) in a device with 7,7,8,8-tetracyanoquinodimethane (TCNQ). Since the TCNQ has a high electron affinity, it is widely used for a charge-transport and injection layer. And the TCNQ-derivatives have also been used to control the conductivity of the materials. It is known that a charge injection and transport in OLEDs with a TCNQ-derivative enhances a performance of the devices such as operating voltage and efficiency. To see how the TCNQ affects on the device performance, we have made a reference device in a structure of ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm). And several type of devices were manufactured by doping TCNQ either in TPD or $Alq_3$ layer. The TCNQ layer was also formed in between the organic layers. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxy quinoline) aluminium ($Alq_3$), and TCNQ layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. The deposition rate was $1.0{\sim}1.5\;{\AA}/s$ for TPD, and $1.0{\sim}1.5\;{\AA}$ for $Alq_3$. The LiF was thermally evaporated at a deposition rate of $0.2\;{\AA}/s$ successively. The device with TCNQ-derivative improved the turn-on voltage compared to the one without TCNQ-derivative.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.399-402
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• 2002

This paper is researched that electric characteristic of Digital x-ray radiography technique with changing composition ratio of Iodine. Dopant material, Iodine is evaporated with amorphous selenium. Thorugh the old papers say, doponted Iodine will be down the created trap level because of Arsenic dopant material in amorphous selenium. Arsenic material of Composition ratio in amorphous selenium is fixed with 0.3% and test sample is deposited composition of 30, 100, 300, 500, 700ppm with thermal evaporate system. Experimental measurement is performed by dark current and x-ray sensitivity in amorphous selenium based radition detector sensor. Fabricated test sample thickness is $30{\mu}m$ and injected voltage is $3{\mu}m$，$6{\mu}m$，$9{\mu}m$ to both electrode. Experimental results showed that the net charge of composition rate of 30ppm is 398.88 pc/mR/$cm^2$ very high. And increase of the Iodine composition ratio is tendency to the decrease of net charge. Doping changing composition of Iodine in amorphous selenium detector offered to basical information of amorphous selenium material.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.431-431
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• 2011

Graphene, two dimensional sheet of sp2-hybridized carbon, has attracted an enormous amount of interest due to excellent electrical, chemical and mechanical properties for the application of transparent conducting films, clean energy devices, field-effect transistors, optoelectronic devices and chemical sensors. Especially, graphene is promising candidate to detect the gas molecules and biomolecules due to the large specific surface area and signal-to-noise ratios. Despite of importance to the disease diagnosis, there are a few reports to demonstrate the graphene- and rGO-FET for biological sensors and the sensing mechanism are not fully understood. Here we describe scalable and facile fabrication of rGO-FET with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}1$-antichymotrypsin (PSA-ACT) complex, in which the ultrathin rGO sensing channel was simply formed by a uniform self-assembly of two-dimensional rGO nanosheets on aminated pattern generated by inkjet printing. Sensing characteristics of rGO-FET immunosensor showed the highly precise, reliable, and linear shift in the Dirac point with the analyte concentration of PSA-ACT complex and extremely low detection limit as low as 1 fg/ml. We further analyzed the charge doping mechanism, which is the change in the charge carrier in the rGO channel varying by the concentration of biomolecules. Amenability of solution-based scalable fabrication and extremely high performance may enable rGO-FET device as a versatile multiplexed diagnostic biosensor for disease biomarkers.