• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1805-1806
• /
• 2007

Silicon nitride (SiN) 박막을 플라즈마 응용화학기상법을 이용하여 증착하였다. SiN박막의 전하밀도는 일반화된 회귀 신경망 (GRNN)을 이용하여 모델링하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. GRNN 모델의 예측수행은 유전자 알고리즘 (GA)을 이용하여 최적화하였다. 최적화한 GA-GRNN 모델은 종래의 GRNN 모델과 비교하여, 약55%정도의 예측성능의 향상을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.207-210
• /
• 1998

Electrical properties such as space charge distribution and electrical conduction of XLPE/VLDPE blends were studied. When the VLDPE is blended, residual charge inside XLPE increases. In case of electrical conduction characteristics, there were no changes in electrical conduction mechanism, space charge limited conduction. XLPE/VLDPE blend including crosslinking coagent showed relatively small current density. It might be due to the carbonyl group in crosslinking coagent.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1984-1985
• /
• 2007

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.28 no.11
• /
• pp.1376-1383
• /
• 2004

In the present work, a series of experiments have been performed on electro-hydrodynamic atomization of non-conducting liquid using a charge injection type nozzle. Effects of liquid flow rate, input voltage, and distance between the needle and the ground electrode (nozzle-embedded metal plate) have been examined. For fixed electrode distances, total and spray currents increase with the increase of liquid flow rate and input voltage. When the distance between the needle tip and the ground electrode becomes closer, the total, leakage and spray currents increase, while the onset voltage for the dielectric breakdown decreases. When the electric field strength of the liquid jet exceeds that for the air breakdown, a portion of the electric charges in the liquid jet is dissipated into the ambient air, and the charge density shows a limiting value. Atomization quality can be improved by increasing the liquid flow rate due to the higher charge density and the enhanced aerodynamic effect.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.5
• /
• pp.235-239
• /
• 2006

Charge dynamics in polymeric materials after aged under ac electric field using the pulsed electroacoustic (PEA) technique is reported. The emphasis is placed on charge decay. The charge dynamics of the ac aged additive free low density polyethylene (LDPE) samples under dc bias differ from the sample without ac ageing, indicating changes brought in by ac ageing. It is believed that a slow decay rate of charge in the ac aged sample is related to the formation of deep traps in the material. However, chemical analysis by infrared spectroscope (FTIR) and Raman microscope reveals no significant chemical changes taken place in the bulk of the material after ac ageing. Further experiments on irradiated LDPE have revealed a similar behaviour, i.e. the charge decay is slower in irradiated samples than that of fresh sample. The findings presented clearly indicate that space charge measurement can be used as a diagnostic tool to monitor ageing in polymeric materials.

• Proceedings of the KIEE Conference
• /
• 2000.07e
• /
• pp.108-112
• /
• 2000

The electric charge generated by flowing insulation liquid can create hazardous spark in transfer line and receiving tank etc. These electrification has generally been measured by current measurement with a ammeter connected to the receiving tank. This paper reports on the experimental result obtained by this method. As a experimental results: The injected charge value for unit volume increased in the following condition, the edge of the needle electrode was sharp, the number of needle electrode was fewer, the edge of the needle electrode was located close to the inside wall. When the charge density in the charge reducer is constant, electrode current and electrode potential by the charge injection from outside increase with increasing of oil velocity and streaming current. The electrode potential in charge reducer is made maximum value at edge point of reducer inside and minimum value at center line of charge reducer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.497-500
• /
• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.417-422
• /
• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Journal of the Korean Ceramic Society
• /
• v.34 no.10
• /
• pp.1060-1066
• /
• 1997

In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.125-128
• /
• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.