• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• ETRI Journal
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• v.38 no.6
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• pp.1031-1041
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• 2016

This paper presents millimeter-wave (mmWave) propagation characteristics and channel model parameters including path loss, delay, and angular properties based on 28 GHz and 38 GHz field measurement data. We conducted measurement campaigns in both outdoor and indoor at the best potential hotspots. In particular, the model parameters are compared to sub-6 GHz parameters, and system design issues are considered for mmWave 5G Giga communications. For path loss modeling, we derived parameters for both the close-in free space model and the alpha-beta-gamma model. For multipath models, we extracted delay and angular dispersion characteristics including clustering results.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.10
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• pp.2338-2356
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• 2013

In cognitive radio networks, acquiring the position information of the primary user is critical to the communication of the secondary user. Localization of primary users can help improve the efficiency with which the spectrum is reused, because the information can be used to avoid harmful interference to the network while simultaneity is exploited to improve the spectrum utilization. Despite its inherent inaccuracy, received signal strength based on range has been used as the standard tool for distance measurements in the location detection process. Most previous works have employed the path-loss propagation model with a fixed value of the path loss exponent. However, in actual environments, the path loss exponent for each channel is different. Moreover, due to the complexity of the radio channel, when the number of channel increases, a larger number of RSS measurements are needed, and this results in additional energy consumption. In this paper, to overcome this problem, we propose using the Bayesian compressive sensing method with a calibrated path loss exponent to improve the performance of the PU localization method.

• Journal of IKEEE
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• v.26 no.1
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• pp.89-94
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• 2022

The W-band (75-110GHz) is a band that can utilize at least 10 times more bandwidth than the existing 5G band. Therefore, it is one of the bands suitable for future mobile communication that requires high speed and low latency, such as virtual and augmented reality. However, since the wavelength is short, it has a high path loss and is very sensitive to the atmospheric environment. Therefore, in order to develop a W-band communication system in the future, it is necessary to analyze the characteristics of path loss according to the channel environment. In this paper, to analyze the characteristics of the W-band path loss, the random forest technique was used, and the influence of the channel parameters according to the distance section was analyzed through the path loss data according to various channel environment parameters. As a result of the simulation, the distance has the highest influence on the path loss in the short distance, and the other channel environment factor is almost ignored. However, as the distance section became longer, the influence of distance decreased while the impact of clutter and rainfall increased.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.181-188
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• 2012

In this paper, the measurement data is analyzed and channel parameters are derived through MIMO Channel measurements at 781MHz considering outdoor multi-path environment. 781MHz frequency band currently operates the DTV system. However, it will be allocated new mobile communication frequency band. The channel characteristics at 781MHz seem to be similar existing mobile communication system at 900MHz but a study on channel characteristics of signal transfer process is necessary because there is incomplete study in mobile networks at 781MHz. To avoid interference with Korean DTV broadcasting, we measured channel characteristics in city/suburban areas of Jeju island by channel sounder and $4{\times}4$ antenna of the ETRI(Korea Electronics and Telecommunications Research Institute). Path Loss, Delay Spread, Angular Spread and K-factor were derived based on measured data.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.9
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• pp.2433-2443
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• 1996

In this paper, a new technique is proposed for obtaining the error probabilities of the VSB(vestigial sideband modulation) signal in the presence of the cochannel interference and frequency-selective fading channel. For the receivers, a suboptimal matched filter receiver and the MLSE(maximum likelihood sequence estimation) receiver, which is known to be optimal on the fading channel, are considered. First, for the matched filter receiver, the distributions of the random variables, which determine the SER(symbol error rate) are obtained by decomposing the multi-path fading channel into Rayleigh distributed main path and Gaussian distributed remained path channels. the random variables mean the energy of the main path and subpath respecitively, and SER can be calculated from the distribution of them. Next, for the case of the MLSE receover, it is found that the random variables are expressed as a function of integrals. In order to obtain the distribution for the random variables, we expanded each element of integrals with the KL(Karhunen-Loeve) transformation. And it is derived that the distributions for the transformed random variables are given by a sum of chi-square distributions. Finally, we calculated the error rate derived formula on the two-ray fading channel, which is one of widely used models for the frequency-selective fading channel. From the numerical results, it is found that for the matched filer receiver, performance degradation is significant, while the performance degradation at the MLSE receiver is insignificant on the frequency-selective fading channel. However, in case of cochannel interference environment, the error rateis found to increase significantly both at the matched filter and at the MLSE receiver.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.581-586
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• 2015

This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.