• 한국위성정보통신학회논문지
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• 제11권4호
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• pp.21-26
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• 2016

PPS 소자가 삽입된 N형 실리콘 제어 정류기(NSCR_PPS) 소자에서 채널차단영역의 이온주입 변화가 정전기 보호 성능에 미치는 영향을 연구하였다. 종래의 NSCR 표준소자는 on 저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 마이크로칩의 정전기보호소자로 적용이 어려웠다. 그러나 본 연구에서 제안하는 채널 차단 영역의 이온주입 조건을 변화시켜 각각 변형설계된 소자에서는 채널 차단 이온주입이 정전기 보호성능의 향상에 영향을 주는 중요한 파라미터였으며, CPS_PDr+HNF 구조의 변형소자는 정전기보호소자의 설계창을 만족시키는 향상된 정전기보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• 말소리와 음성과학
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• 제6권3호
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• pp.91-99
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• 2014

Although it is well documented that patients with cochlear implant experience hearing difficulties when processing their first language, very little is known whether or not and to what extent cochlear implant patients recognize segments in a second language. This preliminary study examines how Korean learners of English identify English segments in a normal hearing and cochlear implant simulation conditions. Participants heard English vowels and consonants in the following three conditions: normal hearing condition, 12-channel noise vocoding with 0mm spectral shift, and 12-channel noise vocoding with 3mm spectral shift. Results confirmed that nonnative listeners could also retrieve spectral information from vocoded speech signal, as they recognized vowel features fairly accurately despite the vocoding. In contrast, the intelligibility of manner and place features of consonants was significantly decreased by vocoding. In addition, we found that spectral shift affected listeners' vowel recognition, probably because information regarding F1 is diminished by spectral shifting. Results suggest that patients with cochlear implant and normal hearing second language learners would experience different patterns of listening errors when processing their second language(s).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.97-98
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• 2006

For high performance transistor in the 0.14um generation, high speed sram is using a weak region of SCE(Short Channel Effect). It causes serious SCE problem (Vth Roll-Off and Punch-Through etc). This paper shows improvement of Vth roll-off and Ion/Ioff characteristics through high concentration Pocket implant, LDD(Light Dopped Dram) and low energy Implant to reduce S/D Extension resistance. We achieve stabilized Vth and Improved transistor Ion/Ioff performance of 10%.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.517-525
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• 2002

The channel region of seep-sub-micrometer MOSFET is non-uniformly doped with pocket implant. Therefore, the advanced threshold voltage model is needed to account for the Short-Channel Effect and Reverse-Short-Channel Effect due to the non-uniform doping concentration in the channel region. In this paper, A scalable analytical model for the MOSFET threshold voltage is developed. The developed model is verified with MEDICI and TSUPREM simulator.

• Journal of Periodontal and Implant Science
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• 제35권3호
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• pp.591-596
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• 2005

Amlodipine, nifedipine, and felodipine are calcium channel blocking agents, which are cause of unwanted gingival overgrowth around natural teeth. Many studies has been performed about this unwanted effects. However, the exact etiology remains uncertain.Few reports and investigations can be found in the literature on drug-induced gingival overgrowth around dental implants. The present case reports that amlodipine-induced gingival overgrowth occurred in peri-implant sites, confirms clinical and histological features in hyperplastic peri-implant tissues. Clinical and histological features of amlodipine-induced gingival overgrowth around dental implants were similar to that of tissue around natural teeth.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 말소리와 음성과학
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• 제1권2호
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• pp.25-30
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• 2009

Animal experiments have shown that the positive peaked electrically compound action potentials (ECAPs) can be recorded in round window, intracochlear, and nerve trunk by stimulating a monopolar pulse. However, positive peaked ECAPs of cochlear implant recipients have never been reported because ECAPs are recorded from intracochlear electrodes after bipolar stimulation. In our experiment, the positive peaked ECAPs were recorded from 18 intracochlear electrodes in cochlear implant recipients with multiple cochlear anomalies. Thresholds in each channel were measured and the latency of P-, N-wave, and amplitude of P-N were analyzed. These results were identical with the electrically auditory brainstem response (EABR) on the input-output characteristics. In conclusion, the positive peaked ECAPs from the cochlear implant recipients are antidromic ECAPs recorded by perimodiolar electrodes stimulating cochlear implants with multiple anomalies. Therefore, positive peaked ECAPs can be used as useful audiological tools to evaluate the eighth nerve ending.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.35-41
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• 2017

We propose a novel multi-photodiode array (MPDA) based retinal implant IC with on/off stimulation strategy for a visual prosthesis with improved spatial resolution. An active pixel sensor combined with a comparator enables generation of biphasic current pulses when light intensity meets a threshold condition. The threshold is tuned by changing the discharging time of the active pixel sensor for various light intensity environments. A prototype of the 30-channel retinal implant IC was fabricated with a unit pixel area of $0.021mm^2$, and the stimulus level up to $354{\mu}A$ was measured with the threshold ranging from 400 lx to 13120 lx.

• 대한의용생체공학회:의공학회지
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• 제34권2호
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• pp.47-54
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• 2013

Electrical stimulation is delivered to auditory nerve (AN) through the electrodes in cochlear implant system. Neurogram is a spectrogram that includes information of neural response to electrical stimulation. We hypothesized that the similarity between a neurogram and an input-sound spectrogram could show how well a cochlear implant system works. In this study, we evaluated electrical stimulus configuration of CIS strategy using the computational model. The computational model includes stochastic property and anatomical features of cat auditory nerve fiber. To evaluate similarity between a neurogram and an input-sound spectrogram, we calculated Structural Similarity Index (SSIM). The results show that the dynamic range and the stimulation rate per channel influenced SSIM. Finally, we suggested the optimal configuration within the given stimulus CIS. We expect that the results and the evaluating procedure could be employed to improve the performance of a cochlear implant system.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.193-196
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• 2002

This paper presents the improvement of the boron penetration and the reverse short channel effect (RSCE) in the 130nm W/WNx/Poly-Si dual gate PMOSFET for a high performance embedded DRAM. In order to suppress the boron penetration, we studied a range in the process heat budget. It has shown that the process heat budget reduction results in suppression of the boron penetration. To suppress the RSCE, we experimented with the halo (large tilt implantation of the same type of impurities as those in the device well) implant condition near the source/drain. It has shown that the low angle of the halo implant results in the suppression of the RSCE. The experiment was supported from two-dimensional(2-D) simulation, TSUPREM4 and MEDICI.