• Title/Summary/Keyword: channel attention

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Graphene for MOS Devices

  • Jo, Byeong-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.67.1-67.1
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    • 2012
  • Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

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Effects of source bias on the programming characteristics of submicron EPROM/Flash EEPROM (Submicron EPROM/flash EEPROM의 프로그램 특성에 대한 소오스 바이어스의 영향)

  • 박근숙;이재호;박근형
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.107-116
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    • 1996
  • Recently, the flash memory has been abstracting great attention in the semiconductor market in the world because of its potential applications as mass storage devices. One of the most significant barriers to the scalling-down of the stacked-gate devices such as EPROM's and flash EEPROM's is the large subthreshold leakage in the unselected cells connected with the bit line of a selected cell in the array during programming. The large subthreshold leakge is majorly due to the capacitive coupling between the floating gates of the unselectd cells and the bit line of selected cell. In this paper, a new programming method to redcue significantly the drain turn-on leakage in the unselected cells during programming has been studied, where a little positive voltage (0.25-0.75V) is applied to the soruce during programming unlike the conventional programming method in which the source is grounded. The resutls of the PISCES simulations and the electrical measurements for the standard EPROM with 0.35.mu.m effective channel length and 1.0.mu.m effective channel width show that the subthreshold leakage in the unselectd cells is significantly large when the source is grounded, whereas it is negligibly small when the source is biased ot a little positive voltage during programming. On the other hadn, the positive bias on the source is found to have little effects on the programming speed of the EPROM.

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Inertial Microfluidics-Based Cell Sorting

  • Kim, Ga-Yeong;Han, Jong-In;Park, Je-Kyun
    • BioChip Journal
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    • v.12 no.4
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    • pp.257-267
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    • 2018
  • Inertial microfluidics has attracted significant attention in recent years due to its superior benefits of high throughput, precise control, simplicity, and low cost. Many inertial microfluidic applications have been demonstrated for physiological sample processing, clinical diagnostics, and environmental monitoring and cleanup. In this review, we discuss the fundamental mechanisms and principles of inertial migration and Dean flow, which are the basis of inertial microfluidics, and provide basic scaling laws for designing the inertial microfluidic devices. This will allow end-users with diverse backgrounds to more easily take advantage of the inertial microfluidic technologies in a wide range of applications. A variety of recent applications are also classified according to the structure of the microchannel: straight channels and curved channels. Finally, several future perspectives of employing fluid inertia in microfluidic-based cell sorting are discussed. Inertial microfluidics is still expected to be promising in the near future with more novel designs using various shapes of cross section, sheath flows with different viscosities, or technologies that target micron and submicron bioparticles.

Detection of Incivility based on Attention-embedding and multi-channel CNN (어텐션임베딩과 다채널 CNN 기반 반시민성 검출 알고리즘)

  • Park, Youn-Jung;Lee, Se-Young;Keum, Hee-Jo
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.26 no.12
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    • pp.1880-1889
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    • 2022
  • The online portal platform provides online news with online comments, but the anonymity of comments causes incivility, and online comments are considered social problems. While there are many foreign language-based incivility detection studies, in-depth research is not being conducted in Korea since there has not been implemented Korean language dataset which is labeled detailed criteria of incivility. In this study, the incivility notation of comments was conducted in a total of 13 items, uncivil words were summarized. Furthermore, Attention algorithm was applied to each comment and summary to extract embedding vectors. 2-d CNN followed at the end to detect incivility in given data. As a result, we showed that the proposed algorithm is useful for anti-citizen detection such as name-calling and offensive tones. This study is expected to contribute to the formation of a healthy online comment culture by detecting uncivil comments which hinder democratic discourse.

Underwater Laser Communication Using LDPC Coded Method (LDPC 부호화 기술을 이용한 수중 레이저 통신)

  • Lee, A-Hyun;Baek, Chang-Uk;Lee, Dong-Hun;Jung, Ji-Won
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.3
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    • pp.246-252
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    • 2018
  • Recent studies have been received much attention on underwater laser communication, which is capable of high data rate. However, in underwater laser communication, distortions caused by absorption and scattering induced performance degradation. A typical way to improve performance is to apply channel coding technique. In the beginning of studies, simple methods such as RS and BCH coding techniques were applied. However, due to distance expansion and performance improvement, channel coding methods with low error probability such as LDPC coded method were applied. In this paper, we analyzed the performance according to the size of the code word N, the distance between the transceivers and the size of the M of the M-ary PPM modulation scheme. Simulation results show that parameter M of M-ary PPM is most effect on performance.

The Fabrication of Four-Terminal Poly-Si TFTs with Buried Channel (Buried Channel 4단자 Poly-Si TFTs 제작)

  • Jeong, Sang-Hun;Park, Cheol-Min;Yu, Jun-Seok;Choe, Hyeong-Bae;Han, Min-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.12
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    • pp.761-767
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    • 1999
  • Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at $V_{DD}$ = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics.

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Performance Analysis of MC DS-CDMA System using Turbo Code in Multipath Rayleigh Fading Channel (다중경로 레일리 페이딩 채널에서 Turbo 부호를 적용한 MC DS-CDMA 시스템의 성능 분석)

  • 박기식
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.5
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    • pp.902-907
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    • 2001
  • In this paper, we analyzed BER performance of the MC DS-CDMA system and evaluated the degree of performance improvement of the system caused by adopting turbo code recently receiving much attention due to its powerful coding capability. As a result of analysis, it was found that the MC DS-CDMA system without any powerful coding scheme can not serve voice quality $(BER : 10^{-3}$ regardless of the number of users and the value of $(BER : 10^{-3)$ in Rayleigh fading channel. On the other hand, it was found that the MC DS-CDMA system adopting turbo code for performance improvement, shows improved BER performance and can serve voice quality without regard to the number of users and the value of $(BER : 10^{-3)$ in the same channel. For example, when $(BER : 10^{-3)$ is l0dB and the number of users was 10, the MC DS-CDMA system adopting turbo code showed improved BER performance about $5\times10^{-3}$.

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Study on Boiling Heat Transfer Phenomenon in Micro-channels (마이크로채널에서의 비등열전달 현상에 관한 연구)

  • Jeong, Namgyun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.9
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    • pp.605-613
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    • 2017
  • Recently, efficient heat dissipation has become necessary because of the miniaturization of devices, and research on boiling on micro-channels has attracted attention. However, in the case of micro-channels, the friction coefficient and heat transfer characteristics are different from those in macro-channels. This leads to large errors in the micro scale results, when compared to correlations derived from the macro scale. In addition, due to the complexity of the mechanism, the boiling phenomenon in micro-channels cannot be approached only by experimental and theoretical methods. Therefore, numerical methods should be utilized as well, to supplement these methods. However, most numerical studies have been conducted on macro-channels. In this study, we applied the lattice Boltzmann method, proposed as an alternative numerical tool to simulate the boiling phenomenon in the micro-channel, and predicted the bubble growth process in the channel.

Effects of Ta addition in Co-sputtering Process for Ta-doped Indium Tin Oxide Thin Film Transistors

  • Park, Si-Nae;Son, Dae-Ho;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.334-334
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    • 2012
  • Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

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DTN Routing Protocol Utilizing Underwater Channel Properties in Underwater Wireless Sensor Networks (수중 무선센서네트워크에서 수중채널의 특성을 활용한 DTN 라우팅 프로토콜)

  • Park, Seongjin;Kim, Sungryul;Yoo, Younghwan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39B no.10
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    • pp.645-653
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    • 2014
  • Recently, the ocean field researches such as offshore plant, ocean survey and underwater monitoring systems are garnering the attention from both academy and industry. However, the communication in underwater environment is very difficult because of the unique irregular features in water. This is the reason that the application of terrestrial protocols to the water environment is not proper. This paper proposes a routing algorithm that can enhance communication reliability by utilizing channel properties in underwater environment. We address two problems that lead to the poor communication performance, signal attenuation and multi-path problem in water. Overcoming these problems, the proposed algorithm ensures high packet delivery ratio and low transmission delay. Also, this paper evaluates the performance through simulation.