• Title/Summary/Keyword: channel attention

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Schottky barrier overlapping in short channel SB-MOSFETs (Short Channel SB-FETs의 Schottky 장벽 Overlapping)

  • Choi, Chang-Yong;Cho, Won-Ju;Chung, Hong-Bay;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.133-133
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    • 2008
  • Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

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Analysis on the Effects and Influences of Mindfulness Based Breathing and Body Scan for Elderly Women's Attentive Concentration (마음챙김 호흡과 신체이완이 여성노인의 주의집중력에 미치는 영향 분석)

  • Kim, Yun-Keum;Yi, Seon-Gyu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.1
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    • pp.173-179
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    • 2015
  • This study is analized with how Mindfulness Based Breathing and Body Scan influences to elderly women's attentive concentration measured by 2-channel system EEG(Electroencephalogram) which method is objectively and determinately. The subjects in this study are 60 aged over 65years of elderly women in K city, who were divided into two groups; such as 30 of the experimental group and 30 of the control group checked by EEG before and after the treatment. The study started from March to July in 2013. The treatment was conducted by ones a week, 60minutes a time for 16 weeks. The result in experimental group is indicated as followed. The Attention Quotient Lt(69.61/70.85, p<.024) showed higher score after treatment, and Attention Quotient Rate Lt(4.22/3.75, p<.037), Attention Quotient Rate Rt(4.29/3.70, p<.019) did show statistically lower score after treatment. Attention Quotient is shown attentive concentration and awareness in the brain. Therefore, Mindfulness Based Breathing and Body Scan is proved the value and efficiency for activating elderly women's attentive concentration by a way of practical using in neuroscience.

Single Image Super-Resolution Using CARDB Based on Iterative Up-Down Sampling Architecture (CARDB를 이용한 반복적인 업-다운 샘플링 네트워크 기반의 단일 영상 초해상도 복원)

  • Kim, Ingu;Yu, Songhyun;Jeong, Jechang
    • Journal of Broadcast Engineering
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    • v.25 no.2
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    • pp.242-251
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    • 2020
  • Recently, many deep convolutional neural networks for image super-resolution have been studied. Existing deep learning-based super-resolution algorithms are architecture that up-samples the resolution at the end of the network. The post-upsampling architecture has an inefficient structure at large scaling factor result of predicting a lot of information for mapping from low-resolution to high-resolution at once. In this paper, we propose a single image super-resolution using Channel Attention Residual Dense Block based on an iterative up-down sampling architecture. The proposed algorithm efficiently predicts the mapping relationship between low-resolution and high-resolution, and shows up to 0.14dB performance improvement and enhanced subjective image quality compared to the existing algorithm at large scaling factor result.

Effects of Lemakalim, a Potassium Channel Opener, on the Contractility and Electrical Activity of the Antral Circular Muscle in Guinea-Pig Stomach

  • Kim, Sung-Joon;Jun, Jae-Yeoul;Choi, Youn-Baik;Kim, Ki-Whan;Kim, Woo-Gyeum
    • The Korean Journal of Physiology
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    • v.28 no.1
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    • pp.37-50
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    • 1994
  • Synthetic potassium channel openers (KCOs) are agents capable of opening K-channels in excitable cells. These agents are known to have their maximal potency in the smooth muscle tissue, especially in the vascular smooth muscle. Much attention has been focused on the type of K-channel that is responsible for mediating the effects of KCOs. As the KCO-induced changes are antagonized by glibenclamide, an $K_{ATP}$ (ATP-sensitive K-channel) blocker in the pancreatic ${\beta}-cell,\;K_{ATP}$ was suggested to be the channel responsible. However, there also are many results in favor of other types of K-channel $$(maxi-K,\;small\;conductance\;K_{Ca,}\; SK_{ATP}) mediating the effects of KCOs. Effects of lemakalim, (-)enantiomer of cromakalim (BRL 34915), on the spontaneous contractions and slow waves, were investigated in the antral circular muscle of the guinea-pig stomach. Membrane currents and the effects on membrane currents and single channel activities were also measured in single smooth muscle cells and excised membrane patches by using the patch clamp method. Lemakalim induced hyperpolarization and inhibited spontaneous contractions in a dose-dependent manner. These effects were blocked by glibenclamide and low concentrations of tetraethyl ammonium (< mM). Glibenclamide blocked the effect of lemakalim on the membrane potential and slow waves. The mechanoinhibitory effect of lemakalim was blocked by pretreatment with glibenclamide. In a whole ceIl patch clamp condition, lemakalim largely increased outward K currents. These outward K currents were blocked by TEA, glibenclamide and a high concentration of intracelIular EGTA (10 mM). Volatage-gated Ca currents were not affected by lemakalim. In inside-out patch clamp experiments, lemakalim increased the opening frequency of the large conductance $Ca^{2+}-activated$ K channels $(BK_{Ca},\;Maxi-K).$ From these results, it is suggested that lemakalim induces hyperpolarization by opening K-channels which are sensitive to internal Ca and such a hyperpolarization leads to the inhibition of the spontaneous contraction.

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Fabrication of wrap-around gate nanostructures from electrochemical deposition (전기화학적 도금을 이용한 wrap-around 게이트 나노구조의 제작)

  • Ahn, Jae-Hyun;Hong, Su-Heon;Kang, Myung-Gil;Hwang, Sung-Woo
    • Journal of IKEEE
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    • v.13 no.2
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    • pp.126-131
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    • 2009
  • To overcome short channel effects, wrap-around field effect transistors have drawn a great deal of attention for their superior electrostatic coupling between the channel and the surrounding gate electrode. In this paper, we introduce a bottom-up technique to fabricate a wrap-around field effect transistor using silicon nanowires as the conduction channel. Device fabrication was consisted mainly of electron-beam lithography, dielectrophoresis to accurately align the nanowires, and the formation of gate electrode using electrochemical deposition. The electrolyte for electrochemical deposition was made up of non-toxic organic-based solution and liquid nitrogen was used as a method of maintaining the shape of polymethyl methacrylate(PMMA) during the process of electrochemical deposition. Patterned PMMA can be used as a nano-template to produce wrap-around gate nano-structures.

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The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors

  • Kim, Hyeong-Jun;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.289.2-289.2
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    • 2016
  • In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

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A Study on the Determinants for Measuring Performance of the Electronic Goods Distribution Channel (전자유통경로의 성과평가 척도에 관한 연구)

  • 황호종
    • The Journal of Information Technology
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    • v.2 no.2
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    • pp.1-12
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    • 1999
  • The purpose of this study is to classify the determinants of channel performance and to reveal the contribution of classified performance factor on the total distribution performance of individual channel members. The empirical results of this study confirm that channel member performance is too rich and complex to be accurately reflected in a single item or even limited domain performance measures. The respondents in our sample monitored a lot of different facets of performance, indicating their belief in the multidimensional nature of performance. Our finding that outcome-based monitoring was particularly pervasive was not surprising given that managerial attention to end results is expected since those results are necessary for continued survival of the dealership. However, the dealership owner were not content to rely exclusively on these outcome performance indicators. They also gathered information on the efforts and activities that lead to those outcomes as well as other facets of information such as customer satisfaction and selling skills of salesperson. Limiting the definition and measurement of performance to outcomes only, or to a single item measure would have failed to capture important facets of performance, and could distort he relationship between the managerial variables and performance.

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Factors of Leading the Adoption of Diet/Exercise Apps on Smartphones: Application of Channel Expansion Theory (다이어트/운동 앱의 수용에 대한 결정요인: 채널확장이론을 중심으로)

  • Cho, Jaehee;Kim, Sun Jin
    • Journal of Internet Computing and Services
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    • v.16 no.1
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    • pp.101-108
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    • 2015
  • This study paid attention to the notable increase of the use of diet/exercise apps on smartphones. Based on channel expansion theory and technology acceptance model (TAM), this study investigated how three predictors-Internet information use efficacy, Internet information credibility, smartphone use efficacy-affected one's attitude toward and intention to use diet/exercise apps. Results from a path analysis indicated that Internet information use efficacy and smartphone use efficacy positively predict the perceived ease of use of diet/exercise apps. Internet information credibility positively predicts the perceived usefulness of such apps. Moreover, there were gender differences in the effects of both Internet information use efficacy and Internet information credibility on the perceived usefulness of diet/exercise apps.

Joint Estimation Schemes of Carrier and Sampling Frequency Offsets for MB-OFDM UWB Systems (MB-OFDM UWB 시스템을 위한 반송파 및 샘플링 주파수 오프셋 결합 추정 기법)

  • Cho, Chang-Hoon;Yang, Suck-Chel;Shin, Yo-An
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.10C
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    • pp.965-975
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    • 2005
  • In this paper, we propose and evaluate joint carrier and sampling frequency offset estimation schemes based on the channel estimation sequences in PLCP (Physical Layer Convergence Procedure) preamble for the proper and effcient synchronization of the MB-OFDM WB (Multi-Band Orthogonal Frequency Division Multiplexing Ultra Wide Band) systems which have recently drawn explosive attention for future W-PAN (Wireless Personal Area Network) applications. In the joint estimation schemes, we first estimate the sampling frequency offset, and then estimate the carrier frequency offset using the estimated sampling frequency offset. Moreover, to improve the reliability of the estimated offset values, each process uses a combination scheme based on weighting factors. Simulation results using IEEE 802.15 Task Group 3a UWB channel models reveal that the estimation scheme using the simple weighting factors based on easily-measurable received signal power of each sub-channel shows favorably comparable performance to the ideal scheme using the weighting factors based on the perfectly-estimated frequency response of the channel.

Dependence of Hot Electron Effects on Temperature in The Deep Submicron SOI n-Channel MOSFETs (Deep Submicron SOI n-채널 MOSFET에서 열전자 효과들의 온도 의존성)

  • Park, Keun-Hyung;Cha, Ho-Il
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.2
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    • pp.189-194
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    • 2018
  • Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.